2SB1188

2SB1188
-2A, -40V
PNP Silicon Medium Power Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
DESCRIPTION
The 2SB1188 is designed for medium poweramplifier applications.
4
1
FEATURES


Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
RoHS Compliant Product
E
B
CLASSIFICATION OF hFE
Product-Rank
2SB1188-P
2
A
3
C
D
1. Base
F
2SB1188-Q
G
2SB1188-R
Range
82~180
120~270
180~390
Marking
BCP
BCQ
BCR
MPQ
Leader Size
SOT-89
1K
7’ inch
K
J
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
2. Collector
H
3. Emitter
L
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
1.2
0.89
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage Temperature
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
-40
-32
-5
-2
V
V
V
A
W
°C
0.5 (2.0*)
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Transition frequency
fT
Output Capacitance
COB
Note:
1. Pulse Test: Pulse Width ≦ 380μs, Duty Cycle≦2%
http://www.SeCoSGmbH.com/
04-Nov-2014
Rev. E
Min.
Typ.
Max.
Unit
Test Conditions
-40
-32
-5
-
-500
150
50
-1
-1
-800
390-
V
V
V
μA
μA
mV
IC=-50A , IE=0
IC= -1mA, IB=0
IE= -50A, IC=0
VCB= -20V, IE=0
VEB= -4V, IC=0
IC=--2A, IB= -200mA
VCE= -3V, IC= -500mA
VCE= -5V, IC= -500mA, f=30MHz
VCB= -10V, IE=0, f=1MHz
82
-
MHz
pF
Any changes of specification will not be informed individually.
Page 1 of 2
2SB1188
Elektronische Bauelemente
-2A, -40V
PNP Silicon Medium Power Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
04-Nov-2014
Rev. E
Any changes of specification will not be informed individually.
Page 2 of 2