SECOS BCP4672

BCP4672
2A, 60V
NPN Epitaxial Silicon Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES

SOT-89
The BCP4672 is designed for low frequency amplifier applications.
4
MARKING
4672

1 2
3
A
Date Code
E
C
B
D
CLASSIFICATION OF hFE
Product Rank
F
BCP4672-A
BCP4672-B
120~240
200~400
Range
H
PACKAGE INFORMATION
MPQ
LeaderSize
SOT-89
1K
7’ inch
K
J
REF.
Package
G
A
B
C
D
E
F
L
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
1.2
0.89
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Junction & Storage Temperature
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
60
50
6
2
5
2
150, -55~150
V
V
V
IC
PD
TJ, TSTG
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)*
hFE*
fT
Cob
60
50
6
120
-
0.1
210
25
100
100
0.35
400
-
V
V
V
IC= 50A, IE=0
IC= 1mA, IB=0
IE= 50A, IC=0
VCB= 60V, IE=0
VEB= 5V, IC=0
IC= -1A, IB= 50mA
VCE= 2V, IC= 500mA
VCE= 2V, IC= 500mA, f=100MHz
VCB= 10V, IE=0, f=1MHz
nA
nA
V
MHz
pF
*Measured under pulse condition. Pulse width≦380μs, Duty Cycle≦2%.
http://www.SeCoSGmbH.com/
10-Dec-2010
Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2
BCP4672
Elektronische Bauelemente
2A, 60V
NPN Epitaxial Silicon Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
10-Dec-2010
Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2