SECOS PZT13003

PZT13003
1.5A , 700V
NPN Silicon Medium Power Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-223
FEATURES


For AF driver and output stages
Power switching applications
A
M
CLASSIFICATION OF hFE
4
Product-Rank
PZT13003-A
PZT13003-B
PZT13003-C
Range
8~20
15~30
25~40
Top View
CB
1
2
K
3
L
E
D
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-223
2.5K
13 inch
F
G
REF.
A
B
C
D
E
F
H
Millimeter
Min.
Max.
6.20
6.70
6.70
7.30
3.30
3.70
1.42
1.90
4.50
4.70
0.60
0.82
J
Millimeter
Min.
Max.
0.10
0.25
0.35
2.30 REF.
2.90
3.10
REF.
G
H
J
K
L
M
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Symbol
Ratings
Unit
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage
VCEO
450
V
Emitter-Base Voltage
VEBO
9
V
Collector Current -Continuous
IC
1.5
A
Collector Power Dissipation
PD
1.25
W
TJ, TSTG
150, -55~150
°C
Parameter
Junction, Storage Temperature
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Symbol
Min.
Collector-base breakdown voltage
Parameter
V(BR)CBO
700
Max.
Unit
Collector-emitter breakdown voltage
V(BR)CEO
450
V
IC=10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO
9
V
IE=1mA, IC=0
V
Test Conditions
IC=1mA , IE=0
Collector cut-off current
ICBO
0.1
mA
VCB=700V, IE=0
Emitter-Base Cutoff Current
IEBO
0.05
mA
VEB=9V, IC=0
DC current gain
hFE
8
40
Collector-emitter saturation voltage1
VCE(sat)
1
Base-emitter voltage
VBE(on)
T(on)
tS
ON-Time
Storage time
Fall time
tf
Transition frequency
fT
http://www.SeCoSGmbH.com/
19-Jan-2012 Rev. A
IC=1A, IB=250mA
1.2
V
IC=1A, IB=250mA
1
μS
4
μS
0.7
4
VCE=10V, IC=0.5A
V
VCE=10V, IC=2A
IB1=IB2=400mA
μS
MHz
VCE=10V, IC=500mA, f=1.0MHZ
Any changes of specification will not be informed individually.
Page 1 of 2
PZT13003
Elektronische Bauelemente
1.5A , 700V
NPN Silicon Medium Power Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
19-Jan-2012 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2