2SD1468S 1A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92S Low Saturation Voltage Ideal for Voltage, High Current Drives. High DC Current Gain and High Current REF. A B C D E F G H J K L CLASSIFICATION OF hFE Product-Rank 2SD1468S-Q Range 120~270 2SD1468S-R 2SD1468S-S 180~390 270~560 Millimeter Min. Max. 3.90 4.10 3.05 3.25 1.42 1.62 15.1 15.5 2.97 3.27 0.66 0.86 2.44 2.64 1.27 REF. 0.36 0.48 0.36 0.51 45° Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 30 15 5 1 300 150, -55~150 V V V A mW °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut–Off Current Emitter Cut–Off Current DC Current Gain Collector to Emitter Saturation Voltage Collector Output Capacitance Transition Frequency http://www.SeCoSGmbH.com/ 26-Mar-2012 Rev. A Symbol Min. Typ. Max. Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Cob fT 30 15 5 120 50 - 0.5 0.5 560 0.4 30 - V V V µA µA V pF MHz Test Condition IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 VCE=3V, IC=100mA IC=500mA, IB=50mA VCB=10V, IE=0, f=1MHz VCE=5V, IC=50mA, f=100MHz Any changes of specification will not be informed individually. Page 1 of 1