2SA821 -0.03A , -210 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Breakdown Voltage Low Transition Frequency G A 2SA821-P 2SA821-Q 82~180 82~180 56~120 Range Emitter Collector Base J CLASSIFICATION OF hFE Product-Rank 2SA821-N H D REF. B K E C F A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction, Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC RθJA TJ, TSTG -210 -210 -5 -30 250 500 150, -55~150 V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob -210 -210 -5 56 - 50 8 -1 -1 270 -0.6 - V V V μA μA http://www.SeCoSGmbH.com/ 14-Feb-2011 Rev. A V MHz pF Test condition IC= -0.05mA, IE=0 IC= -0.1mA, IB=0 IE= -0.05mA, IC=0 VCB= -150V, IE=0 VEB= -4.5V, IC=0 VCE= -3V, IC= -5mA IC= -2mA, IB= -0.2mA VCE= -5V, IC= -2mA VCB= -10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1