2SA1981 -0.8 A, -35 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High DC Current Gain Complementary Pair with 2SC5344 G H Emitter Collector Base CLASSIFICATION OF hFE J Product-Rank 2SA1981-O 2SA1981-Y 100~200 Range A D 160~320 REF. B A B C D E F G H J K K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC RθJA TJ, TSTG -35 -30 -5 -0.8 625 200 150, -55~150 V V V A mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob -35 -30 -5 100 - 120 19 -0.1 -0.1 320 -0.5 - V V V μA μA http://www.SeCoSGmbH.com/ 26-Jan-2011 Rev. A V MHz pF Test condition IC= -0.5mA, IE=0 IC= -1mA, IB=0 IE= -0.05mA, IC=0 VCB= -35V, IE=0 VEB= -5V, IC=0 VCE= -1V, IC= -0.1A IC= -0.5A, IB= -20mA VCE= -5V, IC= -10mA VCB= -10V, IE= 0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1