2N4124 0.2 A, 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High DC Current Gain High Transition Frequency TO-92 G H Emitter Base Collector J A D B Collector REF. K E Base C A B C D E F G H J K F Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit VCBO VCEO VEBO IC PC RθJA TJ, TSTG 30 25 5 0.2 350 357 150, -55~150 V V V A mW °C / W °C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (1) hFE (2) 30 25 5 120 60 - 50 50 360 - V V V nA nA IC= 0.01mA, IE = 0A IC=1mA, IB = 0A IE= 0.01mA, IC = 0A VCB= 20V, IE = 0 A VEB= 3V, IC = 0 mA VCE= 1V, IC= 2 mA VCE= 1V, IC=50mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.3 V IC=50mA, IB=5mA Base to Emitter Saturation Voltage VBE(sat) - - 0.95 V IC=50mA, IB=5mA Cob fT 300 - 4 - pF MHz DC Current Gain Collector output Capacitance Transition Frequency http://www.SeCoSGmbH.com/ 29-Dec-2010 Rev. A Test Condition VCB = 5V, IE = 0A, f=1MHz VCE = 20V, IC = 10mA, f=100MHz Any changes of specification will not be informed individually. Page 1 of 1