RoHs D882 D T NPN SILICON POWER TRANSISTOR DESCRIPTION 8.5 MAX. 3.2 ±0.2 12 TYP. R T C E L O 12.0 MAX. IC N ABSOLUTE MAXIMUM RATINGS C 2.5 ±0.2 3.8 ±0.2 • Low saturation voltage VCE(sat) = 0.5 V MAX. (IC = −2 A, IB = 0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) • Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required. 2.8 MAX. 13.0 MIN. FEATURES Maximum Temperature Storage Temperature −55 to +150°C Junction Temperature 150°C Maximum Maximum Power Dissipations 1.0 W Total Power Dissipation (TA = 25°C) 10 W Total Power Dissipation (TC = 25°C) Maximum Voltages and Currents (TA = 25°C) Collector to Base Voltage 40 V VCBO VCEO Collector to Emitter Voltage 30 V VEBO Emitter to Base Voltage 5.0 V Collector Current (DC) 3.0 A IC(DC) IC(pulse)Note Collector Current (pulse) 7.0 A Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2% ,. L O PACKAGE DRAWING (Unit: mm) The D882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. 0.55 +0.08 –0.05 0.8 +0.08 –0.05 1.2 TYP. 2.3 TYP. 2.3 TYP. 1: Emitter 2: Collector: connected to mounting plane 3: Base ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC DC Current Gain DC Current Gain E Gain Bandwidth Product Output Capacitance J E Collector Cutoff Current Emitter Cutoff Current SYMBOL Collector Saturation Voltage Base Saturation Voltage TEST CONDITIONS Note MIN. TYP. 30 150 60 160 hFE1 VCE = 2.0 V, IC = 20 mA hFE2 VCE = 2.0 V, IC = 1.0 A fT VCE = 5.0 V, IC = 0.1 A 90 Cob VCB = 10 V, IE = 0, f = 1.0 MHz 45 ICBO VCB = 30 V, IE = 0 A Note MAX. UNIT 400 MHz pF IEBO VEB = 3.0 V, IC = 0 A 1.0 µA µA VCE(sat) IC = 2.0 A, IB = 0.2 A Note 0.3 0.5 V IC = 2.0 A, IB = 0.2 A Note 1.0 2.0 V VBE(sat) 1.0 Note Pulse Test: PW ≤ 350 µs, Duty Cycle ≤ 2% W CLASSIFICATION OF hFE Rank R Q P E Range 60 to 120 100 to 200 160 to 320 200 to 400 Remark Test Conditions: VCE = 2.0 V, IC = 1.0 A The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. WEJ ELECTRONIC CO. Document No. D17116EJ2V0DS00 (2nd edition) (Previous No. TC-3564) Date Published March 2004 N CP(K) Printed in Japan Http:// www.wej.cn E-mail:[email protected] c 2004 RoHs D882 D T TYPICAL CHARACTERISTICS (TA = 25°C) VCE = 10 V IC = 1.0 A PT ∆Rth Note N TC = 25°C R T C E L IC VCEO Note O IB VCE hFE VBE VBE 50% IC(DC)MAX. C hFE IC(pulse) IC IC TC TA IC VCE VCE J E t) (sa VBE(sat) VCE(sat) VCE W E IC WEJ ELECTRONIC CO. fT VBE(sat) VCE = 5.0 V IE = 0 A (Cob) IC = 0 A (Cib) Cib Cob Cib Cob IC = 10 A • IB ,. L O IC Http:// www.wej.cn VCB VEB E-mail:[email protected]