<^£.mi-(^on.aactoi L/-* 10 duct i, Una. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 NPN SILICON TRANSISTOR 2SC1940 DESCRIPTION The 2SC1940 is designed for use in driver stages of audio frequency amplifiers. PACKAGE DIMENSIONS in millimeters (inches! FEATURES * High total power dissipation and high breakdown voltage: 1.0 Wat 25 °C ambient temperature/VCEO = 120 V ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature —55 to +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation (Ta = 25 °C) Total Power Dissipation 1.0 W Thermal Resistance(Junction to Ambient) 125°C/W Maximum Voltages and Currents (Ta = 25 °C) VCBO Collector to Base Voltage 120 V VCEO Collector to Emitter Voltage 120 V VEBO Emitter to Base Voltage 5.0 V >c IB Collector Current 50 mA Base Current 10 mA 1. EMITTER 2. COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS (Ta = 25 °C) WIN. TYP. MAX. UNIT DC Current Gain 90 200 400 - VCE = 10 V, lc=10mA h FE2 DC Current Gain 50 180 - V C E =10 V. lc-1.0mA fT Gain Bandwidth Product 50 120 cob Output Capacitance 'CBO SYMBOL CHARACTERISTIC hFE1 MHz TEST CONDITIONS VCE = IO V. lg=-10mA 3.0 pF VCB = 10 V, IE=O, f-1.0 MHz Collector Cutoff Current 100 nA V CB -120 v, IE=O !EBO Emitter Cutoff Current 100 nA V EB = 5.0 V, lc=0 VBE Base to Emitter Voltage 685 750 mV V C E =10 V, l c =10mA vCE(sat) Collector Saturation Voltage 0.07 0.6 V IG = 20 mA. 13=2.0 mA VBE(sat) Base Saturation Voltage 0.75 1.0 V lc = 20 mA. lB"2.0 mA 2.3 650 Classification of Rank M L K Range 90 - 180 1 35 - 270 200 - 400 hFE1 Test Conditions: VCE = 10 V. \Q= 10 mA NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors TYPICAL CHARACTERISTICS (Ta=25 °C unless otherwise noted) SAFE OPERATING AREAS (TRANSIENT T H E R M A L RESISTANCE METHOD) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE \0 £ 1 c 2 100 150 200 •| 0.8 1 c ra a a 0.6 « "S 20 ia < ,s ! N. v —M fc^a rit-t-n —=f— 1 -[•- -^(- 1 3 s CJ 0 ^T 1 10 0 -U o 20 » 1 0 0 30 ^ /Vs / Y >° ^ jj s ^ ^•« = —2— o— —» I 150 100 0 20 S ! 0 - i "41 i t i ; , 2 Q. 400 r***\- _ ^ffl l—1 — .^zm^ %YSS - '/, ffi '/ s\ X \s -as 1 ^ "L-fe —f — 4t 50 duty cycle£2 % ! ! j r^±_-^ ^! 5 S 0.2 ! ! , [ ice t I «•« 2 i 1 200 25 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IB =50 * A \' 0 2 0 0 3 0 0 o 2 4 6 8 T a — Ambient Temperature — *C VCE ^Collector to Emitter Voltage-v vCE-Collector to Emitter Voltage-V COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 20 40 60 80 1 0.2 100 0.5 1 2 5 10 20 50 100 1C-Collector Current-mA £-Collector to Emitter Voltage-V 1.5 0.6 0,7 0.3 09 10 ^-Base to Emitter Voltage-V BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT IC '-10-19 " 0.2 3! £ o.i — 0.05 S °'02 0-0! ..1 0.2 31 0.1 0.2 0.5 1 2 S 10 20 1C ^Collector Current-mA SO 100 0.5 1 2 5 10 20 Ir—Collector Current — mA 50 100 ' . 1 - 0 . 2 - 0 . 5 - 1 -2 -5 -10-20 IE-Emitter Current-mA -50-100 1