RoHS 2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 2.4 1.3 Rating Vcbo 50 V Collector-Emitter Voltage Vceo 45 V Emitter-Base Voltage Vebo 5 V Collector Current Ic 100 mA Collector Dissipation Ta=25 * PD 225 mW Junction Temperature Tj 150 Storage Temperature Tstg -55-150 R T Characteristic Collector-Base Breakdown Voltage O Collector-Emitter Voltage# Breakdown C E L Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Symbol Min BVcbo 50 BVceo BVebo 0.95 2.9 1.9 Collector-Base Voltage ELECTRICAL CHARACTERISTICS at Ta=25 IC N Typ Max Unit C O Unit :mm Test Conditions V Ic=100uA Ie=0 45 V Ic= 1mA 5 V Ie= 100uA Ic=0 Ib=0 Icbo 50 nA Vcb= 50V Ie=0 Iebo 50 nA Veb= 5V Ic= 0 Hfe 135 270 1000 Vce= 5V Ic= 1mA Vce(sat) 0.3 V Ic= 100mA Ib= 5mA Base-Emitter Saturation Voltage Vbe(sat) 1.00 V Ic= 100mA Ib= 5mA Base-Emitter on Voltage Vbe(on) 0.63 o.7 V Vce= 5V Ic= 2mA 2.2 3.5 PF J E E Output Capacitance Current Gain-Bandwidth Product Noise Figure W Unit 1.GATE 2.SO URCER 3.DRAIE 0.4 Symbol 1. 0.95 Characteristic D T ,. L 0.58 Cob fT 150 270 NF 10 Vcb= 10V Ie=0 f=1MHz MHz Vce= 5V Ic= 10mA dB Vce= 5V Ic= 0.2mA f=1KHz Rs=2Kohm * Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . # Pulse Test : Pulse Width 300uS,Duty cycle 2% DEVICE MARKING: 2SD601LT1=L5 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]