UTC 2SD882S NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772S 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL RATING UNIT VCBO VCEO VEBO Pc Ic Ic IB Tj TSTG 40 30 5 0.5 3 7 0.6 150 -55 ~ +150 V V V W A A A °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation( Ta=25°C) Collector current(DC) Collector current(PULSE) Base current Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified) PARAMETER SYMBOL Collector cut-off current Emitter cut-off current DC current gain(note 1) ICBO IEBO hFE1 hFE2 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Current gain bandwidth product fT Output capacitance Cob Note 1:Pulse test:PW<300µs,Duty Cycle<2% TEST CONDITIONS VCB=30V,IE=0 VEB=3V,Ic=0 VCE=2V,Ic=20mA VCE=2V,Ic=1A Ic=2A,IB=0.2A Ic=2A,IB=0.2A VCE=5V,Ic=0.1A VCB=10V,IE=0,f=1MHz MIN 30 100 TYP 200 150 0.3 1.0 80 45 MAX UNIT 1000 1000 nA nA 400 0.5 2.0 V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE UTC Q 100-200 P 160-320 E 200-400 UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-024,A UTC 2SD882S NPN EPITAXIAL SILICON TRANSISTOR TYPICAL PARAMETERS PERFORMANCE Fig.2 Derating curve of safe operating areas Fig.1 Static characteristics Fig.3 Power Derating -IB=6mA -IB=5mA -IB=4mA S/ b 50 lim -IB=1mA 0 0 4 8 12 16 20 0 50 100 150 200 -50 Tc,Case Temperature(°C) Fig.4 Collector Output capacitance 10 0 -1 10 2 10 IB=8mA 1 10 0 10 -3 10 -Ic,Collector current(A) FT(MHz), Current gainbandwidth product -2 10 VCE=5V -2 10 -1 10 10 0 1 10 Fig.7 DC current gain 150 200 Ic(max),Pulse Ic(max),DC 10 10 mS 1m S 0 -1 10 -2 10 10 0 1 10 2 10 Collector-Emitter Voltage Ic,Collector current(A) -Collector-Base Voltage(v) 100 S 1m 0. 1 10 50 Fig.6 Safe operating area 1 10 3 10 IE=0 f=1MHz 0 Tc,Case Temperature(°C) Fig.5 Current gainbandwidth product 3 10 0 10 4 0 -50 -Collector-Emitter voltage(V) 2 10 8 d ite -IB=2mA 0 Output Capacitance(pF) lim ite d n tio -IB=3mA 0.4 100 pa si is 0.8 12 Power Dissipation(W) 1.2 - Ic Derating(%) -IB=9mA -IB=8MA -IB=7mA D -Ic,Collector current(A) 150 1.6 Fig.8 Saturation Voltage 3 10 4 10 -Saturation Voltage(mV) DC current Gain,H FE VCE=-2V 2 10 1 10 0 10 0 10 1 10 2 10 3 10 -Ic,Collector current(mA) 4 10 VBE(sat) 3 10 2 10 VCE(sat) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 -Ic,Collector current(mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-024,A