DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS9110T 100 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet Supersedes data of 2004 May 06 2004 May 13 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T FEATURES QUICK REFERENCE DATA • SOT23 package SYMBOL • Low collector-emitter saturation voltage VCEsat VCEO collector-emitter voltage −100 V IC collector current (DC) −1 A • Higher efficiency leading to less heat generation ICM repetitive peak collector current −3 A APPLICATIONS RCEsat equivalent on-resistance 320 mΩ • High collector current capability: IC and ICM PARAMETER MAX. UNIT • Major application segments PINNING – Automotive 42 V power – Telecom infrastructure PIN – Industrial DESCRIPTION 1 base • DC-to-DC conversion 2 emitter • Peripheral drivers 3 collector – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors). handbook, halfpage 3 3 DESCRIPTION 1 PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS8110T. 2 1 Top view MARKING MARKING CODE(1) TYPE NUMBER PBSS9110T 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. *U7 Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. ORDERING INFORMATION TYPE NUMBER PBSS9110T 2004 May 13 PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads 2 VERSION SOT23 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −120 V VCEO collector-emitter voltage open base − −100 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −1 A ICM peak collector current − −3 A IB base current (DC) − −300 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW Tamb ≤ 25 °C; note 2 − 480 mW limited by Tj(max) Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad. 001aaa811 600 Ptot (mW) (1) 400 (2) 200 0 0 40 80 120 160 Tamb (°C) (1) 1 cm2 collector mounting pad. (2) Standard footprint. Fig.2 Power derating curves. 2004 May 13 3 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-a) CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air; note 1 417 K/W in free air; note 2 260 K/W Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad. 001aaa814 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) 10 (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on printed-circuit board; 1 cm2 collector mounting pad. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 May 13 4 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T 001aaa813 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) 10 (8) (9) (10) 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 2004 May 13 5 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = −80 V; IE = 0 A − − −100 nA VCB = −80 V; IE = 0 A; Tj = 150 °C − − −50 μA ICES collector-emitter cut-off current VCE = −80 V; VBE = 0 A − − −100 nA IEBO emitter-base cut-off current VEB = −4 V; IC = 0 A − − −100 nA hFE DC current gain VCE = −5 V; IC = −1 mA 150 − − VCE = −5 V; IC = −250 mA 150 − − VCE = −5 V; IC = −500 mA; note 1 150 − 450 VCE = −5 V; IC = −1 A; note 1 125 − − IC = −250 mA; IB = −25 mA − − −120 mV IC = −500 mA; IB = −50 mA − − −180 mV IC = −1 A; IB = −100 mA; note 1 − − −320 mV VCEsat collector-emitter saturation voltage RCEsat equivalent on-resistance IC = −1 A; IB = −100 mA; note 1 − 170 320 mΩ VBEsat base-emitter saturation voltage IC = −1 A; IB = −100 mA − − −1.1 V VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A − − −1 V fT transition frequency VCE = −10 V; IC = −50 mA; f = 100 MHz 100 − − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0 A; f = 1 MHz − − 17 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 May 13 6 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T 001aaa376 600 (1) hFE 001aaa377 −1.2 VBE (V) (1) −0.8 400 (2) (2) (3) −0.4 (3) 200 0 −10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) −1 −10 −102 −103 −104 IC (mA) VCE = −10 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −10 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 Fig.6 Base-emitter voltage as a function of collector current; typical values. −1 001aaa380 DC current gain as a function of collector current; typical values. 001aaa378 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (2) (1) (2) (3) −10−2 −10−1 −1 −10 −102 −10−2 −10−1 −103 −104 IC (mA) IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Tamb = 25 °C. (1) IC/IB = 50. (2) IC/IB = 20. Fig.7 Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 May 13 7 −1 −10 −102 −103 −104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T 001aaa381 −10 001aaa379 −10 VBEsat (V) VBEsat (V) −1 −1 (1) (2) (3) −10−1 −10−1 −1 −10 −102 −10−1 −10−1 −103 −104 IC (mA) IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.9 −1 −10 −102 −103 −104 IC (mA) IC/IB = 20. Tamb = 25 °C. Base-emitter saturation voltage as a function of collector current; typical values. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. 001aaa382 103 001aaa383 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 (1) (1) (2) (3) 1 1 (2) 10−1 −10−1 −1 −10 −102 10−1 −10−1 −103 −104 IC (mA) −1 −10 −102 −103 −104 IC (mA) IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Tamb = 25 °C. (1) IC/IB = 50. (2) IC/IB = 20. Fig.11 Equivalent on-resistance as a function of collector current; typical values. Fig.12 Equivalent on-resistance as a function of collector current; typical values. 2004 May 13 8 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T 001aaa384 −2 IB (mA) = −45 IC −40.5 (A) −36 −1.6 −31.5 −27 −1.2 −22.5 −18 −13.5 −9 −4.5 −0.8 −0.4 0 0 −1 −2 −3 −4 VCE (V) −5 Tamb = 25 °C. (1) (2) (3) (4) IB = 45 mA. IB = 40.5 mA. IB = 36 mA. IB = 31.5 mA. (5) (6) (7) (8) IB = 27 mA. IB = 22.5 mA. IB = 18 mA. IB = 13.5 mA. (9) IB = 9 mA. (10) IB = 4.5 mA. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 2004 May 13 9 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 May 13 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 10 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 May 13 11 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp12 Date of release: 2004 May 13 Document order number: 9397 750 13273