DISCRETE SEMICONDUCTORS DATA SHEET BYV29 series Rectifier diodes ultrafast Product specification September 1998 NXP Semiconductors Product specification Rectifier diodes ultrafast FEATURES BYV29 series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance k 1 VF ≤ 1.03 V a 2 IF(AV) = 9 A trr ≤ 60 ns GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV29 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN SOD59 (TO220AC) DESCRIPTION 1 cathode 2 anode tab tab cathode 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VRRM VRWM VR Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage - IF(AV) Average forward current1 square wave; δ = 0.5; Tmb ≤ 123 ˚C Repetitive peak forward current t = 25 µs; δ = 0.5; Tmb ≤ 123 ˚C Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; with reapplied VRRM(max) Storage temperature Operating junction temperature - 9 A - 18 A - 100 110 A A -40 - 150 150 ˚C ˚C BYV29 IFRM IFSM Tstg Tj MAX. -300 300 300 300 -400 400 400 400 UNIT -500 500 500 500 V V V THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a CONDITIONS in free air. MIN. TYP. MAX. UNIT - - 2.5 K/W - 60 - K/W 1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.300 NXP Semiconductors Product specification Rectifier diodes ultrafast BYV29 series ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qs Reverse recovery charge trr Reverse recovery time Irrm Peak reverse recovery current Vfr Forward recovery voltage IF = 8 A; Tj = 150˚C IF = 8 A IF = 20 A VR = VRRM VR = VRRM; Tj = 100 ˚C IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/µs IF = 10 A to VR ≥ 30 V; dIF/dt = 50 A/µs; Tj = 100˚C IF = 10 A; dIF/dt = 10 A/µs I dI F 15 F TYP. MAX. UNIT - 0.90 1.05 1.20 2.0 0.1 40 1.03 1.25 1.40 50 0.35 60 V V V µA mA nC - 50 60 ns - 4.0 5.5 A - 2.5 - V Tmb(max) / C BYV29 PF / W Vo = 0.8900 V Rs = 0.0190 Ohms dt t MIN. 112.5 D = 1.0 0.5 rr 125 10 0.2 time 0.1 5 Q I I R s 10% D= 0 0 5 137.5 150 15 10 IF(AV) / A tp T t T rrm Fig.1. Definition of trr, Qs and Irrm I tp I 100% Fig.3. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x √D. 12 F BYV29 PF / W Tmb(max) / C 120 a = 1.57 Vo = 0.89V Rs = 0.019 Ohms 10 125 1.9 2.2 8 time VF V fr VF 6 135 4 140 2 145 0 time 0 2 4 IF(AV) / A 6 8 150 10 Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.2. Definition of Vfr September 1998 130 2.8 4 2 Rev 1.300 NXP Semiconductors Product specification Rectifier diodes ultrafast BYV29 series trr / ns 1000 BYW29 IF / A 30 Tj=150 C IF=10 A Tj=25 C 100 20 1A typ 10 max 10 Tj = 25 C Tj = 100C 1 1 0 100 10 dIF/dt (A/us) Fig.5. Maximum trr at Tj = 25˚C and 100˚C 10 0.5 0 1.5 1 VF / V 2 Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj Irrm / A 1000 Qs / nC IF=10A 1 IF = 10 A 100 IF=1A 2A 0.1 10 Tj = 25 C Tj = 100C 0.01 1 10 -dIF/dt (A/us) 1 100 1.0 Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C. 10 -dIF/dt (A/us) 100 Fig.8. Maximum Qs at Tj = 25˚C 10 Transient thermal impedance, Zth j-mb (K/W) 1 0.1 PD 0.01 0.001 1us tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29 10s Fig.9. Transient thermal impedance Zth j-mb= f(tp) September 1998 3 Rev 1.300 NXP Semiconductors Product specification Rectifier diodes ultrafast BYV29 series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 5,08 0,6 2,4 Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 4 Rev 1.300 NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. 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