UM10483 BFU725F/N1 2.4 GHz to 6.0 GHz LNA

UM10483
BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board
Rev. 1 — 16 September 2011
User manual
Document information
Info
Content
Keywords
LNA, 2.4 GHz to 6.0 GHz, BFU725F/N1, WiFi, 802.11, WiMax, 802.16
Abstract
This document describes how to use the BFU725F/N1 2.4 GHz to 6.0 GHz
LNA demonstration board.
UM10483
NXP Semiconductors
BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board
Revision history
Rev
Date
Description
v 1.0
20110916
first issue
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board
1. Introduction
The BFU725F/N1 is a wideband silicon germanium amplifier transistor for high speed,
low-noise applications. The transistor is designed to be used for LNA applications up to
15 GHz such as GPS, satellite radio, cordless phone, wireless LAN and satellite LNB. The
BFU725F/N1 is packaged in a SOT343F that has 2 emitter pins to reduce emitter
inductance (for maximum gain).
The BFU725F/N1 is ideal for applications where cost is a concern. It also gives the
designer flexibility in his design work, for bias current, frequency of operation,
noise-figure, gain and P1dB.
The 2.4 GHz to 6.0 GHz LNA demonstration (demo) board is designed to evaluate the
performance of the BFU725F/N1 applied as a LNA in the 2.4 GHz to 6 GHz range. In this
document, the application diagram, board layout, bill of materials, and some typical results
are given.
Figure 1 shows the demonstration board.
aaa-000220
Fig 1.
BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board
2. General description
The BFU725F/N1 is the first discrete HBT produced using NXP Semiconductor’s SiGeC
QuBIC4x BiCMOS process. SiGe:C is a silicon germanium process with the addition of
carbon in the base layer of the NPN-transistor. The presence of carbon in the base layer
suppresses the diffusion of boron during wafer processing allowing steeper and narrower
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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board
SiGe HBT base and a heavier doped base. This results in lower base resistance, hence
lower noise and higher cut-off frequency (higher gain). Table 1 shows a summary of the
transistor performance in terms of noise and gain.
Table 1.
BFU725F/N1
VCE = 2 V, IC = 5 mA, Tamb = 25 C
Frequency (GHz)
Noise figure (dB)
Associated gain (dB)
1.5
0.42
24
2.4
0.47
20
5.8
0.7
13.5
12
1.1
10
Table 2.
Pinning information BFU725/N1
Pin
Description
1
emitter
2
base
3
emitter
4
collector
Simplified outline
3
Symbol
4
4
2
1, 3
2
1
mbb159
3. Application board
The BFU725F/N1 2.4 GHz to 6 GHz demonstration board simplifies the evaluation of the
BFU725F/N1 wideband transistor, for this frequency range. The demonstration board
enables testing of the device performance and requires no additional support circuitry.
The board is fully assembled with the BFU725F/N1, including input- and output-matching,
to optimize the performance. For input matching, a compromise must be made between
optimum noise/maximum gain/RL/usable bandwidth of the application and customer
requirements. The board is mounted with signal input and output SMA connectors for
connection to RF test equipment.
Table 3.
Design targets
Symbol
Parameter
Value
Unit
NF
noise figure
<1.3
dB
Gp
power gain
>14
dB
s112
input return loss
>10
dB
s222
output return loss
>10
dB
3.1 Schematic
Figure 2 shows the demonstration board schematic.
Figure 3 shows the required end-users application board schematic optimized for BOM
count compared to the demonstration board schematic which is optimized for tuning
flexibility.
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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board
VCC
R12
0Ω
R3
R4
49.9 kΩ
237 Ω
C17
10 nF
C15
18 pF
R10
619 Ω
L1
6.8 nH
R8
619 Ω
C16
RF_IN
X1
L2
82 nH
C18
R11
3.9 pF
10 Ω
RF_OUT
X2
U1
BFU725FN1
3.9 pF
R9
0Ω
aaa-000221
(1) Output series resistance (ROS) is set for VO = 1.2 V; reference voltage = 0.7 V.
Fig 2.
Demo board schematic
VCC
R3
R4
C17
49.9 kΩ
237 Ω
10 nF
C15
L2
82 nH
18 pF
R10
L1
6.8 nH
RF_IN
X1
1240 Ω
C16
C18
R11
3.9 pF
10 Ω
RF_OUT
X2
U1
BFU725FN1
3.9 pF
aaa-000222
(1) ROS is set for VO = 1.2 V; reference voltage = 0.7 V.
Fig 3.
Circuit diagram of the end-user application circuit (minimized BOM) demo board schematic
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NXP Semiconductors
BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board
3.2 PCB layout
Figure 4 shows the board layout.
aaa-000223
Fig 4.
Printed-circuit board of the BFU725F/N1 2.4 GHz to 6 GHz demo board
The PCB layout is an essential part of an RF circuit design. The demonstration of the
BFU725F/N1 can serve as a guideline for laying out a board using the BFU725F/N1. Use
controlled impedance lines for all high frequency inputs and outputs. Bypass VCC with
decoupling capacitors, preferably located as close as possible to the device. For long bias
lines it may be necessary to add decoupling capacitors to the line away from the device.
Correctly grounding the emitters is also essential for the performance. Connect the
emitters either directly to the ground plane or through vias, or do both.
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NXP Semiconductors
BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board
The demonstration board is constructed from Rogers 4003C using the stack shown in
Figure 5.
35.56 μm
304.8 μm Ro4003C
35.56 μm
655.2 μm FR4 only for
mechanical rigidity of PCB
35.56 μm
Fig 5.
aaa-000250
PCB material stack
3.3 Bill of materials
Table 4.
Demonstration board BOM
Reference Value
Package Manufacturer / part number
Comment
C15
18 pF
0402
Murata GRM1555C1H180JZ01
decoupling
C16
3.9 pF
0402
Murata GRM1555C1H3R9CZ01
DC blocking, input matching
C17
10 nF
0402
Murata GRM155R71C104KA88
decoupling
C18
3.9 pF
0402
Murata GRM1555C1H3R9CZ01
DC blocking, output matching
L1
6.8 nH
0402
Murata LQG15HN6N8J02
input matching
L2
82 nH
0402
CoilCraft 06CS82N
output matching, DC bias
R3
49.9 k
0402
various
bias setting temperature stability
R4
237 
0402
various
bias setting temperature stability
R9
0
0402
various
emitter degenerating resistor, used to set gain
R11
10 
0402
various
stability
R12
0
0402
various
not required
U1
BFU725F/N1 SOT343
NXP Semiconductors
transistor
X1, X2
SMA RF
connector
Johnson, end-launch SMA
142-0701-841
RF input, RF output
X3
DC header
Molex, PCB-header, 1 row, 3 way bias connector
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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board
4. Required equipment
The following equipment is required to perform measurements on the demonstration
board:
• DC power supply up to 30 mA at 3.3 V
• An RF signal generator capable of generating an RF signal over the operating
frequency range of 2.4 GHz to 6.0 GHz (preferably up to 12 GHz)
• An RF spectrum analyzer that covers at least the operating frequency range of
2.4 GHz to 6.0 GHz plus a few harmonics, (up to 18 GHz should be sufficient).
Optionally, a version with the capability of measuring noise figure would be convenient
• Current meter to measure the supply current (optional)
• A network analyzer for measuring gain, return loss, reverse isolation, stability and
P1dB
• Noise figure analyzer
4.1 Connections and setup
The BFU725F/N1 2.4 GHz to 6.0 GHz demonstration board is fully assembled and tested.
Please follow the steps below for a step-by-step guide to operate the demonstration board
and testing the device functions.
1. Connect the DC power supply, set to 3.3 V, to the VCC and GND terminals.
2. Connect the RF signal generator and the spectrum analyzer; to the RF input and the
RF output of the demonstration board respectively. Do not turn on the RF output of the
signal generator yet, set it to 30 dBm output power at 2.4 GHz, and set the spectrum
analyzer on 2.4 GHz center frequency and a reference level of 10 dBm.
3. Turn on the DC power supply and it should read approximately 11 mA.
4. Enable the RF output of the generator; the spectrum analyzer displays a tone of
2.4 GHz at around –10 dBm.
5. Instead of using a signal generator and spectrum analyzer one can also use a
network analyzer in order to measure gain, return loss, stability and P1dB.
6. For noise figure evaluation, either a noise-figure analyzer or a spectrum analyzer with
noise option can be used. The use of a 5 dB noise source, such as the Agilent 346B is
recommended. When measuring the noise figure of the demonstration board, avoid
connecting adaptors and cables between the noise source and the demonstration
board, or de-embedded.
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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board
5. Typical results
5.1 2.4 GHz data (de-embedded)
Table 5.
BFU725F/N1 demonstration board at 2.4 GHz
Symbol
Parameter
Value
Unit
NF
noise figure
0.8
dB
Gp
power gain
>19
dB
s112
Input return loss
<11
dB
s222
output return loss
<12
dB
s122
isolation
>21
dB
PL(1dB)
output power at 1 dB
gain compression
>0.8
dBm
Pi(1dB)
input power at 1 dB
gain compression
>17.3
dBm
IC
collector current
>10.5
mA
5.2 5.9 GHz data (de-embedded)
Table 6.
UM10483
User manual
BFU725F/N1 demonstration board at 5.9 GHz
Symbol
Parameter
Value
Unit
NF
noise figure
1.37
dB
Gp
power gain
>11.6
dB
s112
Input return loss
<9.0
dB
s222
output return loss
<12.0
dB
s122
isolation
>21.0
dB
PL(1dB)
output power at 1 dB
gain compression
>0.7
dBm
Pi(1dB)
input power at 1 dB
gain compression
>10.2
dBm
IC
collector current
>10.5
mA
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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board
Trc1
Trc2
Trc3
Trc4
S11
S21
S12
S22
dB Mag
dB Mag
dB Mag
dB Mag
10 dB /
10 dB /
10 dB /
10 dB /
Ref 0 dB
Ref 0 dB
Ref 0 dB
Ref 0 dB
Cal PCao
Cal PCao
Cal PCao
Cal PCao
1
S11
40
30
M1
20
M2
M 1 2.400000 GHz
• M 2 5.900000 GHz
M 1 2.400000 GHz
M 2 5.900000 GHz
M 1 2.400000 GHz
M 2 5.900000 GHz
M 1 2.400000 GHz
M 2 5.900000 GHz
-11.980
-10.164
18.912
11.694
-26.414
-20.753
-13.080
-12.271
dB
dB
dB
dB
dB
dB
dB
dB
10
0
-10
M2
M
M1
1
M2
M2
-20
M1
-30
-40
Ch1 Start 200 MHz
Pwr -30 dBm
11/23/2010, 1:54 PM
Fig 6.
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Stop 10 GHz
aaa-000224
S parameters
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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board
Trc2 S21 dB Mag 1 dB / Ref 15 dB Ch2 Ca? PCal Off
Trc3 S21 dB Mag 1 dB / Ref 15 dB Ch3 Ca? PCal Off
Trc4 S21 dB Mag 1 dB / Ref 15 dB Ch4 Ca? PCal Off
S21 M 1
19
Cmp
18
17
16
15
M2
14
2
M 1 -35.98dBm 19.144 dB
M 2 -35.98dBm 14.513 dB
• M 3 -35.98dBm 11.699 dB
Trac Stat: Trc2 S21
-17.3 dBm
Cmp In:
0.8 dBm
Cmp Out:
Trac Stat: Trc3 S21
-12.2 dBm
Cmp In:
1.3 dBm
Cmp Out:
•Trac Stat:Trc4 S21
-10.2 dBm
Cmp In:
0.7 dBm
Cmp Out:
Cmp
13
12
M3
Cmp
11
Ch2 Start -40 dBm —
Ch3 Start -40 dBm —
Ch4 Start -40 dBm —
Freq 2.4 GHz
Freq 4.1 GHz
Freq 5.9 GHz
4/19/2011, 2:58 AM
Fig 7.
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Stop 0 dBm
Stop 0 dBm
Stop 0 dBm
aaa-000225
1 dB compression point (input and output)
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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board
Direct
RBW:
1 MHz
RF Atten.
NOISE & GAIN
0 dB
Average:
10
Auto Ref Level
CALIBRATED
On
2nd Stage Corr.
On
Image Rejection
...
Current Value
RF:
6 GHz
ENR
15 dB
NF.
1.77 dB
LO:
...
Loss In
6 dB
Noise Temp.
145.88 K
IF:
...
Loss Out
0.3 dB
Gain
11.75 dB
Noise Figure
Ref
Marker[Noise]
-62.7 dBm
SWT 100 ms
0.991 dB
Gain
2.4 GHz
1.8
20
1.6
18
SGL
1.4
16
PA
1.2
14
1
1
12
0.8
10
0.6
8
0.4
6
0.2
4
2.000 GHz
400.000 MHz/div
(RF)
6.000 GHz
Measurement Complete
Date: 19.APR.2011 17:11:34
Fig 8.
UM10483
User manual
aaa-000226
Demonstration board noise figure 2.4 GHz (not de-embedded to de-embedded
subtract 0.1 dB)
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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board
Direct
RBW:
1 MHz
RF Atten.
Average:
10
RF:
LO:
IF:
CALIBRATED
2nd Stage Corr.
On
Image Rejection
...
6 GHz
Auto Ref Level
On
Current Value
ENR
15 dB
NF.
1.77 dB
...
...
Loss In
Loss Out
Noise Temp.
Gain
145.88 K
11.75 dB
Noise Figure
Ref
NOISE & GAIN
0 dB
6 dB
0.3 dB
Marker[Noise]
-62.7 dBm
SWT 100 ms
1.672 dB
Gain
5.9 GHz
1.8
20
1
1.6
18
SGL
1.4
16
PA
1.2
14
1
12
0.8
10
0.6
8
0.4
6
0.2
4
2.000 GHz
400.000 MHz/div
(RF)
6.000 GHz
Measurement Complete
Date: 19.APR.2011 17:11:56
Fig 9.
UM10483
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aaa-000227
Demonstration board noise figure 5.9 GHz (not de-embedded to de-embedded
subtract 0.3 dB)
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BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board
Trc4 K Lin Mag1 U / Ref 0 U Cal int
1
M 12.400000GHz 1.2160 U
• M 35.900000GHz 1.3498 U
K
8
7
6
5
4
3
2
M3
M1
1
0
Ch1 Start 100 MHz
Pwr -30 dBm
4/19/2011, 3:55 AM
Stop 10 GHz
aaa-000228
Fig 10. Stability factor
6. Abbreviations
Table 7.
UM10483
User manual
Abbreviations
Acronym
Description
BOM
Bill Of Materials
DCR
Direct Current Resistance
GPS
Global Positioning System
HBT
Heterojunction Bipolar Transistor
LFM
Linear Feet per Minute
LNA
Low-Noise Amplifier
RL
Return Loss
SMA
SubMiniature version A
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7. Legal information
7.1
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
7.2
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
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design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Evaluation products — This product is provided on an “as is” and “with all
faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates
and their suppliers expressly disclaim all warranties, whether express, implied
or statutory, including but not limited to the implied warranties of
non-infringement, merchantability and fitness for a particular purpose. The
entire risk as to the quality, or arising out of the use or performance, of this
product remains with customer.
In no event shall NXP Semiconductors, its affiliates or their suppliers be liable
to customer for any special, indirect, consequential, punitive or incidental
damages (including without limitation damages for loss of business, business
interruption, loss of use, loss of data or information, and the like) arising out
the use of or inability to use the product, whether or not based on tort
(including negligence), strict liability, breach of contract, breach of warranty or
any other theory, even if advised of the possibility of such damages.
Notwithstanding any damages that customer might incur for any reason
whatsoever (including without limitation, all damages referenced above and
all direct or general damages), the entire liability of NXP Semiconductors, its
affiliates and their suppliers and customer’s exclusive remedy for all of the
foregoing shall be limited to actual damages incurred by customer based on
reasonable reliance up to the greater of the amount actually paid by customer
for the product or five dollars (US$5.00). The foregoing limitations, exclusions
and disclaimers shall apply to the maximum extent permitted by applicable
law, even if any remedy fails of its essential purpose.
7.3
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
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8. Contents
1
2
3
3.1
3.2
3.3
4
4.1
5
5.1
5.2
6
7
7.1
7.2
7.3
8
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
General description . . . . . . . . . . . . . . . . . . . . . . 3
Application board . . . . . . . . . . . . . . . . . . . . . . . 4
Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
PCB layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Bill of materials . . . . . . . . . . . . . . . . . . . . . . . . . 7
Required equipment . . . . . . . . . . . . . . . . . . . . . 8
Connections and setup . . . . . . . . . . . . . . . . . . . 8
Typical results . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.4 GHz data (de-embedded) . . . . . . . . . . . . . . 9
5.9 GHz data (de-embedded) . . . . . . . . . . . . . . 9
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 September 2011
Document identifier: UM10483