CY20AAH-8F Nch IGBT for Strobe Flasher REJ03G0509-0200 Preliminary Rev.2.00 Nov 29, 2005 Features • VCES: 400 V • ICM: 130 A • Drive voltage: 2.5 V Outline RENESAS Package code: PRSP0008DA-B (Package name: SOP-8 <8P2S-B>) 1 8 2 7 3 6 4 5 5 8 4 1 Note: 1, 2 : Emitter 3 : Emitter (for the gate drive) 4 : Gate 5, 6, 7, 8 : Collector PIN 3 is for the Gate drive only. Note that current from the main circuit cannot flow into this section. (Please see page 3) Applications Strobe flasher for cameras Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Symbol VCES VGES VGEM Ratings 400 ±4 ±6 Unit V V V ICM 130 A Tj Tstg – 40 to +150 – 40 to +150 °C °C Collector current (Pulse) Junction temperature Storage temperature Rev.2.00, Nov 29, 2005, page 1 of 4 Conditions VGE = 0 V VCE = 0 V VCE = 0 V, tw = 10 s CM = 400 µF (see performance curve) CY20AAH-8F Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-Emitter saturation voltage Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Min. 450 — — 0.4 — Typ. — — — 0.6 3.5 Max. — 10 ±10 1.2 7.0 Unit V µA µA V V Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = ±6 V, VCS = 0 V IC = 1 mA, VCE = 10 V IC = 130 A, VGE = 2.5 V Cies — 5500 — pF VCE = 25 V, VGS = 0 V, f = 1MHz Input capacitance Performance Curves Maximum Collector Current vs. Gate - Emitter Voltage Pulse Collector Current ICP (A) 160 TC = 70°C 140 CM = 400 µF RG = 68 Ω 120 100 80 60 40 20 0 0 1 2 3 4 5 6 Gate - Emitter Voltage VGE (V) Rev.2.00, Nov 29, 2005, page 2 of 4 CY20AAH-8F Application Example VCM Trigger Transformer CM 8 + – Xe Tube 7 6 5 VGG Control Signal RD3CYD08 (IGBT Drive IC) 1 2 3 4 Maximum operation conditions VCM = 350 V ICP = 130 A CM = 400 µF VGE = 2.5 V Precautions on Usage 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protects the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied satisfy the rating of maximum pulse collector current. And turn-off dv/dt must become less than 400 V/ µs. In general, when RG(off) = 68 Ω, it is satisfied. 3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pin 1 and 2 which a large current flow are given to the device as the device signal emitter, the device may be damaged due to large current since the specified gate voltage is not applied to the IGBT within the device. 4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (Ixe ≤ 130 A: full luminescence condition) of main capacitor. Repetition period under full luminescence conditions is over 3 seconds. 5. Total operation hours applied to the Gate-Emitter voltage must be within 5,000 hours when VGE is driven at 4 V. Rev.2.00, Nov 29, 2005, page 3 of 4 CY20AAH-8F Package Dimensions Package Name SOP-8 JEITA Package Code P-SOP8-4.4x5-1.27 RENESAS Code PRSP0008DA-B MASS[Typ.] 0.07g E 5 *1 HE 8 Previous Code 8P2S-B F NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 1 4 Index mark c A2 D A1 L A *2 *3 e bp Reference Dimension in Millimeters Symbol D E A2 A1 A bp c y Detail F HE e y L Min 4.8 4.2 Nom Max 5.0 5.2 4.4 4.6 1.5 0.1 0.2 0 1.8 0.35 0.4 0.5 0.13 0.15 0.2 0° 10° 5.7 6.0 6.3 1.12 1.27 1.42 0.1 0.2 0.4 0.6 Order Code Lead form Standard packing Quantity Standard order code Surface-mounted type Taping 3000 Type name – T +Direction (1 or 2)+3 Note: Please confirm the specification about the shipping in detail. Rev.2.00, Nov 29, 2005, page 4 of 4 Standard order code example CY20AAH-8F-T13 Sales Strategic Planning Div. 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