2SD2213 Silicon NPN Epitaxial, Darlington REJ03G0807-0200 (Previous ADE-208-1165) Rev.2.00 Aug.10.2005 Application Low frequency power amplifier Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 2 1. Emitter 2. Collector 3. Base 3 ID 15 kΩ (Typ) 0.5 Ω (Typ) 1 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature E to C diode forward current Rev.2.00 Aug 10, 2005 page 1 of 5 Symbol VCBO VCEO VEBO IC ic (peak) PC Tj Tstg ID Ratings 150 80 8 1.5 3 0.9 150 –55 to +150 1.5 Unit V V V A A W °C °C A 2SD2213 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage E to C diode forward voltage Note: 1. Pulse test Rev.2.00 Aug 10, 2005 page 2 of 5 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE hFE hFE VCE(sat) VBE(sat) VD Min 150 80 8 — — 2000 5000 1000 — — — Typ — — — — — — — — — — — Max — — — 5.0 5.0 — 30000 — 1.5 2.0 3.0 Unit V V V µA µA V V V Test conditions IC = 1 mA, IE = 0 IC = 10 mA, RBE = ∞ IE = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 65 V, IE = ∞ VCE = 2 V, IC = 0.15 A*1 VCE = 2 V, IC = 1 A*1 VCE = 2 V, IC = 1.5 A*1 IC = 1 A*1, IB = 1 mA IC = 1 A*1, IB = 1 mA ID = 1.5 A*1 2SD2213 Main Characteristics 0.3 0.1 Ta = 25°C 1 Shot Pulse 0.03 0.01 50 150 3 10 30 100 Typical Output Characteristics DC Current Transfer Ratio vs. Collector Current 100,000 20 DC Current Transfer Ratio hFE 0 0 0 180 16 14 120 100 80 60 1.2 0.8 40 µA 0.4 Ta = 25°C 0 1 Collector to Emitter Voltage VCE (V) PC = 0.9 W 1.6 100 Ambient Temperature Ta (°C) 2 Collector Current IC (A) 1 s 0µ 0.4 10 0.8 iC(peak) 3 s s 1 m 10 m = Collector Current IC (A) 1.2 0 IB = 0 2 1 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Area of Safe Operation 10 PW Collector Power Dissipation PC (W) Maximum Collector Dissipation Curve Collector to Emitter Saturation Voltage vs. Collector Current 10 3 IC /IB = 100 Ta = –25°C 1.0 25°C 75°C 0.3 0.1 0.01 0.03 0.1 0.3 1.0 3 Collector Current IC (A) Rev.2.00 Aug 10, 2005 page 3 of 5 10 30,000 VCE = 2 V 10,000 3,000 1,000 °C 75 C = 25° C Ta 5° –2 300 100 0.01 0.03 0.1 0.3 1.0 3 Collector Current IC (A) 10 2SD2213 Thermal Resistance θj-a (°C/W) Transient Thermal Resistance 300 100 30 Ta = 25°C 10 3 1.0 0.3 1m 10 m 100 m 1 Time t (s) Rev.2.00 Aug 10, 2005 page 4 of 5 10 100 1,000 2SD2213 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g 4.8 ± 0.4 Unit: mm 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Ordering Information Part Name 2SD2213TZ Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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