MMBF4117 / MMBF4118 / MMBF4119 N-Channel Switch Description G This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources. Sourced from process 53. S SOT-23 D Note: Source & Drain are interchangeable Ordering Information Part Number Top Mark Package Packing Method MMBF4117 61A SOT-23 3L Tape and Reel MMBF4118 61C SOT-23 3L Tape and Reel MMBF4119 61E SOT-23 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VDG Drain-Gate Voltage 40 V VGS Gate-Source Voltage -40 V IGF Forward Gate Current 50 mA -55 to +150 °C TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 1997 Fairchild Semiconductor Corporation MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 www.fairchildsemi.com MMBF4117 / MMBF4118 / MMBF4119 — N-Channel Switch February 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Max. Unit Total Device Dissipation 225 mW Derate Above 25°C 1.8 mW/°C Thermal Resistance, Junction-to-Ambient 556 °C/W Note: 3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage IG = -1.0 μA, VDS = 0 IGSS VGS(off) Gate Reverse Current Gate-Source Cut-Off Voltage -40 VGS = -20 V, VDS = 0 VGS = -20 V, VDS = 0, TA = 150°C V -10 pA -25 nA MMBF4117 -0.6 -1.8 VDS = -10 V, ID = 1.0 nA MMBF4118 -1.0 -3.0 MMBF4119 -2.0 -6.0 MMBF4117 30 90 MMBF4118 80 240 MMBF4119 200 600 MMBF4117 70 210 MMBF4118 80 250 MMBF4119 100 330 V On Characteristics IDSS Zero-Gate Voltage Drain Current(4) VDS = 10 V, VGS = 0 μA Small Signal Characteristics gfs Common-Source Forward Transconductance VDS = 10 V, VGS = 0, f = 1.0 kHz MMBF4117 goss Re(yfs) Common-Source Output Conductance Common-Source Forward Transconductance VDS = 10 V, VGS = 0, f = 1.0 kHz VDS = 10 V, VGS = 0, f = 30 MHz μmhos 3.0 MMBF4118 5.0 MMBF4119 10.0 MMBF4117 60 MMBF4118 70 MMBF4119 90 μmhos μmhos Ciss Input Capacitance VDS = 10 V, VGS = 0, f = 1.0 kHz 3.0 pF Crss Reverse Transfer Capacitance VDS = 10 V, VGS = 0, f = 1.0 MHz 1.5 pF Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 1.0% © 1997 Fairchild Semiconductor Corporation MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 www.fairchildsemi.com 2 MMBF4117 / MMBF4118 / MMBF4119 — N-Channel Switch Thermal Characteristics(3) Figure 1. Parameter Interactions Figure 2. Transfer Characteristics Figure 3. Transfer Characteristics Figure 4. Transfer Characteristics Figure 5. Transfer Characteristics Figure 6. Transfer Characteristics © 1997 Fairchild Semiconductor Corporation MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 www.fairchildsemi.com 3 MMBF4117 / MMBF4118 / MMBF4119 — N-Channel Switch Typical Performance Characteristics Figure 7. Leakage Current vs. Voltage Figure 8. Common Drain-Source Figure 9. Output Conductance vs. Drain Current Figure 10. Conductance vs. Voltage Figure 11. Transconductance vs. Drain Current Figure 12. Noise Voltage vs. Frequency © 1997 Fairchild Semiconductor Corporation MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 www.fairchildsemi.com 4 MMBF4117 / MMBF4118 / MMBF4119 — N-Channel Switch Typical Performance Characteristics (Continued) MMBF4117 / MMBF4118 / MMBF4119 — N-Channel Switch Physical Dimensions 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 13. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 1997 Fairchild Semiconductor Corporation MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I73 © Fairchild Semiconductor Corporation www.fairchildsemi.com