ES2DAF - Surface Mount Superfast Rectifier

ES2DAF
Surface Mount Superfast Rectifier
Features
•
•
•
•
•
•
•
SMAF
Fast Switching Speed – Maximum Trr 35 ns
Ultra Thin Profile - Maximum Height of 1.0 mm
Glass Passivated Junction
UL Flammability 94V-0 Classification
MSL 1
RoHS Compliant / Green Mold Compound
Industrial Device Qualified per AEC-Q101 Standards.
* see authorized use policy
Band Indicates Cathode
1
2
Cathode
Anode
Ordering Information
Part Number
Top Mark
Package
Packing Method
ES2DAF
ES2DAF
DO-214AD (SMAF)
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
200
V
VRRM
Recurrent Peak Reverse Voltage
VRMS
RMS Reverse Voltage
140
V
DC Blocking Voltage
200
V
Average Forward Current
2
A
Peak Forward Surge Current: 8.3 ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method)
50
A
Operating Junction Temperature Range
-55 to +150
°C
Storage Temperature Range
-55 to +150
°C
VR
IF(AV)
IFSM
TJ
TSTG
© 2015 Fairchild Semiconductor Corporation
ES2DAF Rev. 1.1
www.fairchildsemi.com
ES2DAF — Surface Mount Superfast Rectifier
August 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
(1)
ψJL
Typical Thermal Characteristics, Junction-to-Lead
RθJA
Typical Thermal Resistance, Junction-to-Ambient(2)
Unit
25
°C/W
150
°C/W
Notes:
1. Mounted on an FR4 PCB, single-sided copper, with 100cm2 copper pad area.
2. Mounted on an FR4 PCB, single-sided copper, mini pad.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Unit
0.95
V
VF
Forward Voltage
IR
Reverse Current
VR = 200 V
1
μA
trr
Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
35
ns
CJ
Junction Capacitance
VR = 4 V, f = 1 MHz
© 2015 Fairchild Semiconductor Corporation
ES2DAF Rev. 1.1
IF = 2.0 A
Max.
30
pF
www.fairchildsemi.com
2
ES2DAF — Surface Mount Superfast Rectifier
Thermal Characteristics
2
1.5
1
0.5
0
0
25
50
75
100
125
100
CJ, Junction Capacitance (pF)
IF, Forward Current (A)
2.5
150
10
1
1
10
Figure 2. Typical Junction Capacitance
Figure 1. Forward Current Derating Curve
10
1
IF, Forward Current (A)
10
IR,Reverse Current (uA)
100
VR, Reverse Bias Voltage (V)
TC, Case Temperature (°C)
TJ = 150°C
0.1
0.01
TJ = 125°C
TJ = 75°C
TJ = 25°C
TJ = 150°C
1
TJ = 125°C
TJ = 75°C
0.1
TJ = 25°C
0.01
0.001
20
40
60
80
0.2
100
0.6
0.8
1
VF, Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Typical Reverse Characteristics
© 2015 Fairchild Semiconductor Corporation
ES2DAF Rev. 1.1
0.4
Figure 4. Typical Forward Characteristics
www.fairchildsemi.com
3
ES2DAF — Surface Mount Superfast Rectifier
Typical Performance Characteristics
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Figure 5. 2-LEAD, SMAF, NON JEDEC FLAT LEAD
© 2015 Fairchild Semiconductor Corporation
ES2DAF Rev. 1.1
www.fairchildsemi.com
4
ES2DAF — Surface Mount Superfast Rectifier
Physical Dimensions
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I76
© Fairchild Semiconductor Corporation
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