2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant SC70-6 (SOT-363) 1 Marking : 2N D2 G1 S1 1 S2 G2 D1 Ordering Information Part Number Top Mark Package Packing Method 2N7002DW 2N SC70 6L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS ≤ 1.0 MΩ) VGSS ID TJ, TSTG Gate-Source Voltage Drain Current Junction and Storage Temperature Range © 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. 1.2 Value Unit 60 V 60 V Continuous ±20 Pulsed ±40 Continuous 115 Continuous at 100°C 73 Pulsed 800 V mA -55 to +150 °C www.fairchildsemi.com 2N7002DW — N-Channel Enhancement Mode Field Effect Transistor January 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Total Device Dissipation 200 mW Derate Above TA = 25°C 1.6 mW/°C Thermal Resistance, Junction-to-Ambient(1) 625 °C/W Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. 60 78 Max. Unit Off Characteristics(2) BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 μA VDS = 60 V, VGS = 0 V 0.001 1.0 IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V, TJ = 125°C 7 500 IGSS Gate-Body Leakage VGS = ±20 V, VDS = 0 V 0.2 ±10 nA 1.76 2.00 V 1.6 7.5 V μA On Characteristics(2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 1.00 VGS = 5 V, ID = 0.05 A RDS(ON) ID(ON) gFS Static Drain-Source On-Resistance VGS = 10 V, ID = 0.5 A 2.0 VGS = 10 V, ID = 0.5 A, TJ = 125°C 2.53 Ω 13.5 On-State Drain Current VGS = 10 V, VDS = 7.5 V 0.50 1.43 A Forward Transconductance VDS = 10 V, ID = 0.2 A 80.0 356.5 mS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS= 0 V, f = 1.0 MHz 37.8 50 pF 12.4 25 pF 6.5 7 pF 5.85 20 ns 12.5 20 ns Switching Characteristics tD(ON) Turn-On Delay Time tD(OFF) Turn-Off Delay Time VDD = 30 V, ID = 0.2 A, VGEN = 10 V, RL = 150 Ω, RGEN = 25 Ω Note: 2. Short duration test pulse used to minimize self-heating effect. © 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. 1.2 www.fairchildsemi.com 2 2N7002DW — N-Channel Enhancement Mode Field Effect Transistor Thermal Characteristics 3.0 RDS(on), : DRANI-SOURCE ON-RESISTANCE ID. DRAIN-SOURCE CURRENT(A) 1.6 VGS = 10V 1.4 1.2 5V 1.0 4V 0.8 0.6 0.4 3V 0.2 VGS = 3V 4V 4.5V 5V 6V 2.5 2.0 10V 9V 1.5 8V 7V 2V 0.0 0 1 2 3 4 5 6 7 8 9 1.0 0.0 10 0.2 0.4 VDS. DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), : DRANI-SOURCE ON-RESISTANCE RDS(on) : DRANI-SOURCE ON-RESISTANCE 1.0 3.0 VGS = 10V ID = 500 mA 2.5 2.0 1.5 1.0 0.5 -50 2.5 ID = 500 mA 2.0 ID = 50 mA 1.5 1.0 0 50 100 150 2 4 o Vth, Gate-Source Threshold Voltage (V) 1.0 o TJ = -25 C o 0.8 150 C o 25 C o 125 C 0.6 o 75 C 0.4 0.2 0.0 3 4 5 10 2.5 VGS = VDS 2.0 ID = 1 mA ID = 0.25 mA 1.5 1.0 -50 6 0 50 100 150 o VGS. GATE-SOURCE VOLTAGE (V) TJ. JUNCTION TEMPERATURE( C) Figure 6. Gate Threshold Variation with Temperature Figure 5. Transfer Characteristics © 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. 1.2 8 Figure 4. On-Resistance Variation with Gate-Source Voltage Figure 3. On-Resistance Variation with Temperature VDS = 10V 6 VGS. GATE-SOURCE VOLTAGE (V) TJ. JUNCTION TEMPERATURE( C) ID. DRAIN-SOURCE CURRENT(A) 0.8 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 3.0 2 0.6 ID. DRAIN-SOURCE CURRENT(A) www.fairchildsemi.com 3 2N7002DW — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics 280 o 150 C PC[mW], POWER DISSIPATION IS Reverse Drain Current, [mA] VGS = 0 V 100 o 25 C 10 o -55 C 1 0.0 0.2 0.4 0.6 0.8 200 160 120 80 40 0 1.0 0 25 50 75 100 125 150 175 o Ta[ C], AMBIENT TEMPERATURE VSD, Body Diode Forward Voltage [V] Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature © 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. 1.2 240 Figure 8. Power Derating www.fairchildsemi.com 4 2N7002DW — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics (Continued) 2N7002DW — N-Channel Enhancement Mode Field Effect Transistor Physical Dimensions SYMM C L 2.00±0.20 0.65 A 0.50 MIN 6 4 B PIN ONE 1.25±0.10 1 1.90 3 0.30 0.15 (0.25) 0.40 MIN 0.10 0.65 A B 1.30 LAND PATTERN RECOMMENDATION 1.30 1.00 0.80 SEE DETAIL A 1.10 0.80 0.10 C 0.10 0.00 C 2.10±0.30 SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE (R0.10) 0.25 0.10 0.20 A) THIS PACKAGE CONFORMS TO EIAJ SC-88, 1996. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. D) DRAWING FILENAME: MKT-MAA06AREV6 30° 0° 0.46 0.26 SCALE: 60X Figure 9. 6-LEAD, SC70, EIAJ SC-88, 1.25MM WIDE © 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. 1.2 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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