MMPQ6700 Quad NPN and PNP General-Purpose Amplifier Description These complementary devices can be used in switches with collector currents of 10 μA to 100 mA. These devices are best used when space is the primary consideration. Sourced from process 23 and 66. See 2N3904 (NPN) and 2N3906 (PNP) for characteristics. E1 B1 E2 SOIC-16 Mark: MMPQ6700 B2 E3 B3 E4 pin #1 C1 E1 B1 E2 B2 E3 B3 E4 B4 C1 C1 C2 C2 C3 C3 C4 C4 B4 C2 C1 C3 C2 C4 C4 C3 Figure 1. Device Package Figure 2. Internal Connection Ordering Information Part Number Top Mark Package Packing Method MMPQ6700 MMPQ6700 SOIC 16L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V 200 mA -55 to 150 °C IC TJ, TSTG Collector Current - Continuous Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or © 1997 Fairchild Semiconductor Corporation MMPQ6700 Rev. 1.5 www.fairchildsemi.com MMPQ6700 — Quad NPN and PNP General-Purpose Amplifier January 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Max. Total Device Dissipation 1000 mW 8.0 mW/°C Effective 4 Dies 125 °C/W Each Die 240 °C/W Derate Above 25°C Thermal Resistance, Junction-to-Ambient Unit Note: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit BVCEO Collector-Emitter Breakdown Voltage(4) IC = 10 mA, IB = 0 40 V BVCBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 40 V BVEBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 5.0 V ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 50 nA IEBO Emitter Cut-Off Current VEB = 4.0 V, IC = 0 50 nA IC = 10 mA, IB = 1.0 mA 0.25 V hFE VCE(sat) VBE(sat) DC Current Gain(4) Collector-Emitter Saturation Base-Emitter Saturation Voltage(4) Voltage(4) VCE = 1.0 V, IC = 0.1 mA 30 VCE = 1.0 V, IC = 1.0 mA 50 VCE = 1.0 V, IC = 10 mA 70 IC = 10 mA, IB = 1.0 mA 0.9 V Cob Output Capacitance VCB = 5.0 V, f = 100 kHz 4.5 pF Cib Input Capacitance VBE = 0.5 V, f = 100 kHz fT Current Gain Bandwidth Product IC = 10 mA, VCE = 20 V, f = 100 MHz PNP 10 NPN 8.0 200 pF MHz Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 1997 Fairchild Semiconductor Corporation MMPQ6700 Rev. 1.5 www.fairchildsemi.com 2 MMPQ6700 — Quad NPN and PNP General-Purpose Amplifier Thermal Characteristics(3) MMPQ6700 — Quad NPN and PNP General-Purpose Amplifier Physical Dimensions 10.00 9.80 A 8.89 16 9 B 4.00 3.80 6.00 PIN ONE INDICATOR 1.75 1 5.6 8 0.51 0.35 1.27 (0.30) 0.25 M 1.27 C B A 0.65 LAND PATTERN RECOMMENDATION 1.75 MAX 1.50 1.25 SEE DETAIL A 0.25 0.10 C 0.25 0.19 0.10 C 0.50 0.25 X 45° NOTES: UNLESS OTHERWISE SPECIFIED (R0.10) GAGE PLANE A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AC, ISSUE C. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS D) CONFORMS TO ASME Y14.5M-1994 E) LANDPATTERN STANDARD: SOIC127P600X175-16AM F) DRAWING FILE NAME: M16AREV12. (R0.10) 0.36 8° 0° SEATING PLANE 0.90 0.50 (1.04) DETAIL A SCALE: 2:1 Figure 3. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY © 1997 Fairchild Semiconductor Corporation MMPQ6700 Rev. 1.5 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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