KSD882YSTU - Fairchild Semiconductor

KSD882
NPN Epitaxial Silicon Transistor
Recommended Applications
• Audio Frequency Power Amplifier
Featuers
• Low Speed Switcing
• Complement to KSB772.
TO-126
1
1. Emitter
Absolute Maximum Ratings*
Symbol
2.Collector
3.Base
Ta = 25°C unless otherwise noted
Parameter
Ratings
Units
BVCBO
Collector-Base Voltage
40
V
BVCEO
Collector-Emitter Voltage
30
V
BVEBO
Emitter-Base Voltage
5
V
IC
Collector Current(DC)
3
A
IC
Collector Current(Pulse)**
7
A
IB
Base Current
0.6
A
PD
Total Device Dissipation(TC=25°C)
Total Device Dissipation(Ta=25°C)
10
1
W
W
TJ, TSTG
Junction and Storage Temperature
- 55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** PW≤10ms, Duty Cycle≤50%
Electrical Characteristics. T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC=500uA, IE=0
40
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=5mA, IB=0
30
V
BVEBO
Emitter-Base Breakdown Voltage
IE=500uA, IC=0
5
V
ICBO
Collector Cut-off Current
VCB = 30V, IE = 0
1
µA
IEBO
Emitter Cut-off Current
VEB = 3V, IC = 0
1
µA
hFE1
hFE2
*DC Current Gain
VCE = 2V, IC = 20mA
VCE = 2V, IC = 1A
VCE(sat)
*Collector-Emitter Saturation Voltage
VBE(sat)
30
60
150
160
400
IC = 2A, IB = 0.2A
0.3
0.5
V
*Base-Emitter Saturation Voltage
IC = 2A, IB = 0.2A
1.0
2.0
V
fT
Current Gain Bandwidth Product
VCE = 5V, IE = 0.1A
90
MHz
Cob
Output Capacitance
VCB = 10V, IE = 0
f = 1MHz
45
pF
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
© 2007 Fairchild Semiconductor Corporation
KSD882 Rev. B
www.fairchildsemi.com
1
KSD882 — NPN Epitaxial Silicon Transistor
November 2007
Classification
R
O
Y
G
hFE2
60 ~ 120
100 ~ 200
160 ~ 320
200 ~ 400
Ordering Information
Part Number
Marking
Package
Packing Method
Remarks
KSD882OSTU
D882O
TO-126
TUBE
hFE1 R grade
KSD882RSTU
D882R
TO-126
TUBE
hFE1 O grade
KSD882YSTU
D882Y
TO-126
TUBE
hFE1 Y grade
KSD882GSTU
D882G
TO-126
TUBE
hFE1 G grade
* 1. Affix “-S-” means the standard TO126 Package. If the affix is ”-STS-” instead of “-S-”, that means the short-lead TO126 package.
2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method.
© 2007 Fairchild Semiconductor Corporation
KSD882 Rev. B
www.fairchildsemi.com
2
KSD882 — NPN Epitaxial Silicon Transistor
hFE Classification
1000
VCE = 2V
IB = 10mA
1.6
IB = 9mA
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
2.0
IB = 8mA
IB = 7mA
IB = 6mA
1.2
IB = 5mA
0.8
IB = 4mA
IB = 3mA
0.4
100
IB = 2mA
0.0
0
IB = 1mA
4
8
12
16
10
1E-3
20
VCE[V], COLLECTOR-EMITTER VOLTAGE
fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC = 10 IB
VBE(sat)
0.1
VCE(sat)
0.01
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
VCE = 5V
100
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
10
IC[A], COLLECTOR CURRENT
s
0µ
10
10
Lim
ited
d
ite
m
Li
1
1
b
S/
10
IC MAX. (DC) Dissi
pa
tion
s
1m
100
s
m
10
ICMAX. (pulse)
IE=0
f=1MHz
Cob[pF], CAPACITANCE
10
Figure 4. Current Gain Bandwidth Product
1000
0.1
0.01
100
1
VCB[V], COLLECTOR-BASE VOLTAGE
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Collector Output Capacitance
Figure 6. Safe Operating Area
© 2007 Fairchild Semiconductor Corporation
KSD882 Rev. B
1
Figure 2. DC current Gain
10
1E-3
1E-3
0.1
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
1
0.01
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3
KSD882 — NPN Epitaxial Silicon Transistor
Typical Characteristics
16
140
14
PC[W], POWER DISSIPATION
dT(%), IC DERATING
160
120
100
S /b
80
Di
ss
60
40
ip
at
io
20
n
Li m
Li
ite
d
m
ite
d
0
10
8
6
4
2
0
0
25
50
75
100
125
150
175
200
0
o
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
TC[ C], CASE TEMPERATURE
Figure 7. Derating Curve Of Safe Operating Areas
Figure 8. Power Derating
© 2007 Fairchild Semiconductor Corporation
KSD882 Rev. B
12
www.fairchildsemi.com
4
KSD882 — NPN Epitaxial Silicon Transistor
Typical Characteristics
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PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
1.
2.
Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I30
© 2007 Fairchild Semiconductor Corporation
KSD882 Rev. B
www.fairchildsemi.com
5
KSD882 — NPN Epitaxial Silicon Transistor
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