KSD882 NPN Epitaxial Silicon Transistor Recommended Applications • Audio Frequency Power Amplifier Featuers • Low Speed Switcing • Complement to KSB772. TO-126 1 1. Emitter Absolute Maximum Ratings* Symbol 2.Collector 3.Base Ta = 25°C unless otherwise noted Parameter Ratings Units BVCBO Collector-Base Voltage 40 V BVCEO Collector-Emitter Voltage 30 V BVEBO Emitter-Base Voltage 5 V IC Collector Current(DC) 3 A IC Collector Current(Pulse)** 7 A IB Base Current 0.6 A PD Total Device Dissipation(TC=25°C) Total Device Dissipation(Ta=25°C) 10 1 W W TJ, TSTG Junction and Storage Temperature - 55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** PW≤10ms, Duty Cycle≤50% Electrical Characteristics. T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=500uA, IE=0 40 V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 30 V BVEBO Emitter-Base Breakdown Voltage IE=500uA, IC=0 5 V ICBO Collector Cut-off Current VCB = 30V, IE = 0 1 µA IEBO Emitter Cut-off Current VEB = 3V, IC = 0 1 µA hFE1 hFE2 *DC Current Gain VCE = 2V, IC = 20mA VCE = 2V, IC = 1A VCE(sat) *Collector-Emitter Saturation Voltage VBE(sat) 30 60 150 160 400 IC = 2A, IB = 0.2A 0.3 0.5 V *Base-Emitter Saturation Voltage IC = 2A, IB = 0.2A 1.0 2.0 V fT Current Gain Bandwidth Product VCE = 5V, IE = 0.1A 90 MHz Cob Output Capacitance VCB = 10V, IE = 0 f = 1MHz 45 pF * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed © 2007 Fairchild Semiconductor Corporation KSD882 Rev. B www.fairchildsemi.com 1 KSD882 — NPN Epitaxial Silicon Transistor November 2007 Classification R O Y G hFE2 60 ~ 120 100 ~ 200 160 ~ 320 200 ~ 400 Ordering Information Part Number Marking Package Packing Method Remarks KSD882OSTU D882O TO-126 TUBE hFE1 R grade KSD882RSTU D882R TO-126 TUBE hFE1 O grade KSD882YSTU D882Y TO-126 TUBE hFE1 Y grade KSD882GSTU D882G TO-126 TUBE hFE1 G grade * 1. Affix “-S-” means the standard TO126 Package. If the affix is ”-STS-” instead of “-S-”, that means the short-lead TO126 package. 2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method. © 2007 Fairchild Semiconductor Corporation KSD882 Rev. B www.fairchildsemi.com 2 KSD882 — NPN Epitaxial Silicon Transistor hFE Classification 1000 VCE = 2V IB = 10mA 1.6 IB = 9mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 2.0 IB = 8mA IB = 7mA IB = 6mA 1.2 IB = 5mA 0.8 IB = 4mA IB = 3mA 0.4 100 IB = 2mA 0.0 0 IB = 1mA 4 8 12 16 10 1E-3 20 VCE[V], COLLECTOR-EMITTER VOLTAGE fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC = 10 IB VBE(sat) 0.1 VCE(sat) 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 VCE = 5V 100 10 1 0.01 0.1 1 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT s 0µ 10 10 Lim ited d ite m Li 1 1 b S/ 10 IC MAX. (DC) Dissi pa tion s 1m 100 s m 10 ICMAX. (pulse) IE=0 f=1MHz Cob[pF], CAPACITANCE 10 Figure 4. Current Gain Bandwidth Product 1000 0.1 0.01 100 1 VCB[V], COLLECTOR-BASE VOLTAGE 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Collector Output Capacitance Figure 6. Safe Operating Area © 2007 Fairchild Semiconductor Corporation KSD882 Rev. B 1 Figure 2. DC current Gain 10 1E-3 1E-3 0.1 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic 1 0.01 www.fairchildsemi.com 3 KSD882 — NPN Epitaxial Silicon Transistor Typical Characteristics 16 140 14 PC[W], POWER DISSIPATION dT(%), IC DERATING 160 120 100 S /b 80 Di ss 60 40 ip at io 20 n Li m Li ite d m ite d 0 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 0 o 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE TC[ C], CASE TEMPERATURE Figure 7. Derating Curve Of Safe Operating Areas Figure 8. Power Derating © 2007 Fairchild Semiconductor Corporation KSD882 Rev. B 12 www.fairchildsemi.com 4 KSD882 — NPN Epitaxial Silicon Transistor Typical Characteristics The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30 © 2007 Fairchild Semiconductor Corporation KSD882 Rev. B www.fairchildsemi.com 5 KSD882 — NPN Epitaxial Silicon Transistor TRADEMARKS