KSA3010 PNP Epitaxial Silicon Transistor • • • • • Audio Power Amplifier High Current Capability : IC = - 6A High Power Dissipation Wide S.O.A Complement to KSC4010 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted a Value Units VCBO Symbol Collector-Base Voltage Parameter -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -6 A ICP Collector Current (Pulse) -12 A PC Collector Dissipation (TC=25°C) 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 50 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T =25°C unless otherwise noted a Symbol RθJC Parameter Thermal Resistance, Junction to Case Value Units 2.0 °C/W * Device mounted on the minimum pad size. Electrical Characteristics* Symbol Ta = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units -120 - - V - - -10 µA µA BVCEO Collector-Emitter Breakdown Voltage IC= -5A, IB= 0 ICBO Collector Cut-off Current VCB= -120V, IE= 0 IEBO Emitter Cut-off Current VEB= -5V, IC= 0 - - -10 hFE DC Current Gain VCE= -5V, IC= -1A, 55 - 160 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A, IB= -0.5A - - -2.5 V VBE(on) Base-Emitter ON Voltage VCE= -5V, IC= -5A - - -1.5 V fT Current Gain Bandwidth Product VCE= -5V, IC= -1A - 30 - MHz Cob Output Capacitance VCB=-10V, IE=0, f=1MHz - 180 - pF * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% hFE Classification Classification R O hFE 55 ~ 110 80 ~ 160 ©2007 Fairchild Semiconductor Corporation KSA3010 Rev. C 1 www.fairchildsemi.com KSA3010 PNP Epitaxial Silicon Transistor January 2007 Device Item (note) Device Marking Package Packing Method Qty(pcs) KSA3010RTU A3010R TO-3P TUBE 450 KSA3010OTU A3010O TO-3P TUBE 450 Note : The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging 2 KSA3010 Rev. C www.fairchildsemi.com KSA3010 PNP Epitaxial Silicon Transistor Package Marking and Ordering Information 3 10 IC(A), COLLECTOR CRRENT 10 A 00m IB=-2 80mA IB=-1 -160mA IB= A IB=-140m I =-120mA 9 8 hFE, DC CURRENT GAIN B IB=-100mA 7 IB=-80mA 6 IB=-60mA 5 IB=-40mA 4 3 IB=-20mA 2 VCE=5V TC=100℃ TC=25℃ 2 10 1 1 0 0 1 2 3 4 5 6 7 8 9 10 10 0.1 1 VCE(V), COLLECTOR EMITTER VOLTAGE IC(A), COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 IC=10IB 9 IC(A), COLLECTOR CURRENT VCE(sat), SATURATION VOLTAGE 10 1 0.1 TC=100℃ TC=25℃ VCE=-5V 8 7 6 5 TC=100℃ 4 TC=25℃ 3 2 1 0.01 0.01 0.1 1 0 0.2 10 0.4 IC(A), COLLECTOR CURRENT 0.6 0.8 1.0 1.2 1.4 VBE(V), BASE EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage -100 100 PC(W), POWER DISSIPATION 10 0m s DC IC MAX. (DC) ms 10 -1 -0.1 VCEO MAX IC[A], COLLECTOR CURRENT 90 IC MAX. (Pulse) -10 *SINGLE NONREPETITIVE o PULSE TC=25[ C] -0.01 0.1 1 10 70 60 50 40 30 20 10 0 0 100 25 50 75 100 125 150 175 TC(℃), CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area Figure 6. Power Derating 3 KSA3010 Rev. C 80 www.fairchildsemi.com KSA3010 PNP Epitaxial Silicon Transistor Typical Characteristics KSA3010 PNP Epitaxial Silicon Transistor Mechanical Dimensions TO-3P 15.60 ±0.20 3.80 ±0.20 3.50 ±0.20 2.00 ±0.20 +0.15 3.00 ±0.20 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 1.50 –0.05 16.50 ±0.30 9.60 ±0.20 12.76 ±0.20 13.90 ±0.20 ø3.20 ±0.10 4.80 ±0.20 19.90 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters 4 KSA3010 Rev. C www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 5 KSA3010 Rev. 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