BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC807/ BC808 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector Ta = 25°C unless otherwise noted Parameter SOT-23 Value Units : BC817 : BC818 50 30 V V : BC817 : BC818 45 25 V V V Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 IC Collector Current (DC) 800 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted Symbol BVCEO Parameter Test Condition Min. Typ. Max. Units Collector-Emitter Breakdown Voltage : BC817 : BC818 IC=10mA, IB=0 Collector-Emitter Breakdown Voltage : BC817 : BC818 IC=0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 ICES Collector Cut-off Current VCE=25V, VBE=0 100 nA IEBO Emitter Cut-off Current VEB=4V, IC=0 100 nA hFE1 hFE2 DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=300mA VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA VBE (on) Base-Emitter On Voltage VCE=1V, IC=300mA fT Current Gain Bandwidth Product VCE=5V, IC=10mA f=50MHz Cob Output Capacitance VCB=10V, f=1MHz BVCES 45 25 V V 50 30 V V 5 V 100 60 630 0.7 1.2 100 V V MHz 12 pF * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation BC817/BC818 Rev. B 1 www.fairchildsemi.com BC817/BC818 NPN Epitaxial Silicon Transistor November 2006 Classification 16 25 40 hFE1 110 ~ 250 160 ~ 400 250 ~ 630 hFE2 60~ 100~ 170~ Ordering Information Device(note1) Device Marking Package Packing Method Qty(pcs) Pin Difinitions BC81716MTF BC81725MTF 8FA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector 8FB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC81740MTF 8FC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC81816MTF 8GA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC81825MTF 8GB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC81840MTF 8GC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector Note1 : Affix “-16,-25,-40” means hFE classification. Affix “-M” means the matte type package. Affix “-TF” means the tape & reel type packing. 2 BC817/BC818 Rev. B www.fairchildsemi.com BC817/BC818 NPN Epitaxial Silicon Transistor hFE Classification BC817/BC818 NPN Epitaxial Silicon Transistor Typical Performance Characteristics 1.0 600 hfe, Current Gain 500 Vbe(on), Base-Emitter On Voltage,[V] BC81725MTF Vce=1V 400 300 200 o -25 C o 25 C o o 125 C 75 C 100 VCE = 1V 0.9 o 0.8 125 C o 75 C o 25 C 0.7 0.6 0.5 0.4 0.3 0 1 10 100 1 1000 10 100 Collector Current, [mA] Collector Current, [mA] Figure 1. DC current Gain Figure 2. Base-Emitter On Voltage 1.2 Ic=10Ib Ic=10Ib o Vbe(sat), Saturation Voltage,[V] Vce(sat), Saturation Voltage,[V] 0.4 125 C 0.3 o 75 C o 25 C 0.2 o -25 C 0.1 0.0 10 100 1.0 o o 0.8 o 125 C 0.6 o 75 C 0.4 10 1000 25 C -25 C 100 1000 Collector Current, [mA] Collector Current, [mA] Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage PD - Power Dissipation (W) 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 O Temperature, [ C] Figure 5. Power Dissipation vs Ambient Temperature 3 BC817/BC818 Rev. B www.fairchildsemi.com BC817/BC818 NPN Epitaxial Silicon Transistor Mechanical Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters 4 BC817/BC818 Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I21 5 BC817/BC818 Rev. 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