FDPC4044 Common Drain N-Channel PowerTrench® MOSFET 30 V, 27 A, 4.3 mΩ Features General Description Max rS1S2(on) = 4.3 mΩ at VGS = 10 V, IS1S2 = 27 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow. FDPC4044 combines Fairchild’s advanced PowerTrench® process with state of the art packaging process to minimize the on-state resistance. MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing Applications RoHS Compliant Battery management Max rS1S2(on) = 6.4 mΩ at VGS = 4.5 V, IS1S2 = 23 A Pakage size/height: 3.3 x 3.3 x 0.8 mm Load switch Battery protection S1 S2 S2 S2 Pin 1 S1 G1 S1 S1 G2 D2 D1 G1 Pin 1 G2 Top Bottom S2 Power Clip 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VS1S2 Source1 to Source2 Voltage VGS Gate to Source Voltage IS1S2 PD TJ, TSTG Parameter Source1 to Source2 Current -Continuous TA = 25 °C -Pulsed Ratings 30 Units V V (Note 3) ±20 (Note 1a) 27 (Note 2) 120 Power Dissipation TA = 25 °C (Note 1a) 2.7 Power Dissipation TA = 25 °C (Note 1b) 1 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 47 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 127 °C/W Package Marking and Ordering Information Device Marking 40CF Device FDPC4044 ©2013 Fairchild Semiconductor Corporation FDPC4044 Rev.C2 Package Power Clip 33 1 Reel Size 13 ” Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDPC4044 Common Drain N-Channel PowerTrench® MOSFET August 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics IS1S2 Zero Gate Voltage Source1 to Source2 Current VS1S2 = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = 20 V, VS1S2 = 0 V 100 nA V On Characteristics VGS(th) rS1S2(on) gFS Gate to Source Threshold Voltage Static Source1 to Source2 On Resistance Forward Transconductance VGS = VS1S2, IS1S2 = 250 μA 1.5 3 VGS =10 V, IS1S2 = 27 A 1.2 3.2 4.3 VGS = 4.5 V, IS1S2 = 23 A 4.6 6.4 VGS = 10 V, IS1S2 = 27 A, TJ = 125 oC 4.5 7 VS1S2 = 10 V, IS1S2 = 27 A 150 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VS1S2 = 15 V, VGS = 0 V, f = 1 MHz 2295 3215 pF 627 880 pF 66 95 pF 8.5 17 ns 4.8 10 ns 32 52 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 5.2 10 ns Qg Total Gate Charge 35 49 nC Qgs Gate to Source1 Gate Charge Qgd Gate to Source2 “Miller” Charge VS1S2 = 15 V, IS1S2 = 27 A, VGS = 10 V, RGEN = 6 Ω VS1S2 = 15 V, IS1S2 = 27 A, VG1S1 = 10 V, VG2S2 = 0 V 5.7 nC 4.7 nC Source1 to Source2 Diode Characteristics Ifss Maximum Continuous Source1 to Source2 Diode Forward Current Vfss Source1 to Source2 Diode Forward Voltage VG1S1 = 0 V, VG2S2 = 4.5 V, Ifss = 27 A (Note 2) 0.8 1 A 1.2 V Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.127 °C/W when mounted on a minimum pad of 2 oz copper. a. 47 °C/W when mounted on a 1 in2 pad of 2 oz copper. S2S S2F S1S S1F G2 S2S S2F S1S S1F G2 2. Pulse Test: Pulse Width < 300 us, Duty cycle < 2.0%. 3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ©2013 Fairchild Semiconductor Corporation FDPC4044 Rev.C2 2 www.fairchildsemi.com FDPC4044 Common Drain N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 120 VG1S1 = 10 V VG1S1 = 4.5 V VG1S1 = 4 V VG1S1 = 3.5 V 80 VG1S1 = 3 V 40 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VG2S2 = 4.5 V 0 0.0 0.5 1.0 1.5 2.0 120 VGS = 10 V VGS = 4.5 V VGS = 4 V 80 VGS = 3.5 V 40 VGS = 3 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 1.0 1.5 Figure 1. On-Region Characteristics Figure 2. On-Region Characteristics 3 4 NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) VG1S1 = 3 V 2 VG1S1 = 4.5 V VG1S1 = 4 V VG1S1 = 3.5V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VG2S2 = 4.5 V VG1S1 = 10 V 0 0 40 80 120 VGS = 3 V VGS = 3.5 V 2 VGS = 4 V VGS = 4.5 V 1 0 0 40 80 120 Figure 4. Normalized On-Resistance vs Source1 to Source2 Current and Gate Voltage 1.6 rS1S2(on), SOURCE1 TO 1.0 0.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 15 IS1S2 = 27 A 10 TJ = 125 oC 5 TJ = 25 oC 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. On-Resistance vs Gate to Source Voltage Figure 5. Normalized On- Resistance vs Junction Temperature ©2013 Fairchild Semiconductor Corporation FDPC4044 Rev.C2 SOURCE2 ON-RESISTANCE (mΩ) 20 IS1S2 = 27 A VGS = 10 V 1.2 0.6 -75 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) Figure 3. Normalized On-Resistance vs Source1 to Source2 Current and Gate Voltage 1.4 2.0 3 IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE 0.5 VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) 3 www.fairchildsemi.com FDPC4044 Common Drain N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 100 Ifss, REVERSE SOURCE1 TO SOURCE2 CURRENT (A) IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 120 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VS1S2 = 5 V 80 TJ = 150 oC TJ = 25 oC 40 VG1S1 = 0 V, VG2S2 = 4.5 V 10 TJ = 150 oC 1 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0 1 2 3 TJ = -55 oC 0.001 0.0 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 Figure 8. Source1 to Source2 Diode Forward Voltage vs Source Current 10000 10 vG2S2 = 0 V, IS1S2 = 27 A Ciss 8 VS1S2 = 10 V CAPACITANCE (pF) VG1S1, GATE1 TO SOURCE1 VOLTAGE (V) Figure 7. Transfer Characteristics 6 VS1S2 = 15 V 4 VS1S2 = 20 V 1000 Coss Crss 100 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 10 0.1 40 Qg, GATE CHARGE (nC) P(PK), PEAK TRANSIENT POWER (W) 100 us 10 1 ms 10 ms 100 ms 1s 10 s DC 0.1 0.01 THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RθJA = 127 oC/W o TA = 25 C 0.001 0.01 CURVE BENT TO MEASURED DATA 0.1 1 10 100200 30 2000 1000 SINGLE PULSE RθJA = 127 oC/W TA = 25 oC 100 10 1 0.1 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2013 Fairchild Semiconductor Corporation FDPC4044 Rev.C2 10 Figure 10. Capacitance vs Source1 to Source2 Voltage 200 100 1 1 VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 9. Gate Charge Characteristics IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 0.2 Vfss, BODY DIODE FORWARD VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDPC4044 Common Drain N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 127 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2013 Fairchild Semiconductor Corporation FDPC4044 Rev.C2 5 www.fairchildsemi.com FDPC4044 Common Drain N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDPC4044 Common Drain N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: https://www.fairchildsemi.com/evaluate/package-specifications/packageDetails.html?id=PN_PQDEU-XA8. ©2013 Fairchild Semiconductor Corporation FDPC4044 Rev.C2 6 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I71 ©2013 Fairchild Semiconductor Corporation FDPC4044 Rev.C2 7 www.fairchildsemi.com FDPC4044 Common Drain N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ F-PFS™ ®* ® Awinda® FRFET® PowerTrench® AX-CAP®* Global Power ResourceSM TinyBoost® GreenBridge™ PowerXS™ BitSiC™ TinyBuck® Programmable Active Droop™ Green FPS™ Build it Now™ TinyCalc™ QFET® Green FPS™ e-Series™ CorePLUS™ TinyLogic® QS™ Gmax™ CorePOWER™ TINYOPTO™ Quiet Series™ GTO™ CROSSVOLT™ TinyPower™ RapidConfigure™ IntelliMAX™ CTL™ TinyPWM™ ISOPLANAR™ Current Transfer Logic™ ™ TinyWire™ Marking Small Speakers Sound Louder DEUXPEED® TranSiC™ Dual Cool™ Saving our world, 1mW/W/kW at a time™ and Better™ TriFault Detect™ EcoSPARK® SignalWise™ MegaBuck™ TRUECURRENT®* EfficentMax™ SmartMax™ MICROCOUPLER™ μSerDes™ ESBC™ SMART START™ MicroFET™ Solutions for Your Success™ MicroPak™ ® SPM® MicroPak2™ STEALTH™ UHC® MillerDrive™ Fairchild® Ultra FRFET™ SuperFET® MotionMax™ Fairchild Semiconductor® UniFET™ SuperSOT™-3 MotionGrid® FACT Quiet Series™ VCX™ MTi® SuperSOT™-6 FACT® MTx® VisualMax™ SuperSOT™-8 FAST® MVN® VoltagePlus™ SupreMOS® FastvCore™ mWSaver® SyncFET™ XS™ FETBench™ OptoHiT™ Sync-Lock™ Xsens™ FPS™ 仙童 ™