Datasheet - Fairchild Semiconductor

FDPC4044
Common Drain N-Channel PowerTrench® MOSFET
30 V, 27 A, 4.3 mΩ
Features
General Description
„ Max rS1S2(on) = 4.3 mΩ at VGS = 10 V, IS1S2 = 27 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
This device is designed specifically as a single package solution
for Li-Ion battery pack protection circuit and other ultra-portable
applications. It features two common drain N-channel
MOSFETs, which enables bidirectional current flow. FDPC4044
combines Fairchild’s advanced PowerTrench® process with
state of the art packaging process to minimize the on-state
resistance.
„ MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
Applications
„ RoHS Compliant
„ Battery management
„ Max rS1S2(on) = 6.4 mΩ at VGS = 4.5 V, IS1S2 = 23 A
„ Pakage size/height: 3.3 x 3.3 x 0.8 mm
„ Load switch
„ Battery protection
S1
S2
S2
S2
Pin 1
S1
G1
S1
S1
G2
D2
D1
G1
Pin 1
G2
Top
Bottom
S2
Power Clip 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VS1S2
Source1 to Source2 Voltage
VGS
Gate to Source Voltage
IS1S2
PD
TJ, TSTG
Parameter
Source1 to Source2 Current
-Continuous
TA = 25 °C
-Pulsed
Ratings
30
Units
V
V
(Note 3)
±20
(Note 1a)
27
(Note 2)
120
Power Dissipation
TA = 25 °C
(Note 1a)
2.7
Power Dissipation
TA = 25 °C
(Note 1b)
1
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
47
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
127
°C/W
Package Marking and Ordering Information
Device Marking
40CF
Device
FDPC4044
©2013 Fairchild Semiconductor Corporation
FDPC4044 Rev.C2
Package
Power Clip 33
1
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDPC4044 Common Drain N-Channel PowerTrench® MOSFET
August 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
IS1S2
Zero Gate Voltage Source1 to Source2
Current
VS1S2 = 24 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = 20 V, VS1S2 = 0 V
100
nA
V
On Characteristics
VGS(th)
rS1S2(on)
gFS
Gate to Source Threshold Voltage
Static Source1 to Source2 On Resistance
Forward Transconductance
VGS = VS1S2, IS1S2 = 250 μA
1.5
3
VGS =10 V, IS1S2 = 27 A
1.2
3.2
4.3
VGS = 4.5 V, IS1S2 = 23 A
4.6
6.4
VGS = 10 V, IS1S2 = 27 A,
TJ = 125 oC
4.5
7
VS1S2 = 10 V, IS1S2 = 27 A
150
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VS1S2 = 15 V, VGS = 0 V,
f = 1 MHz
2295
3215
pF
627
880
pF
66
95
pF
8.5
17
ns
4.8
10
ns
32
52
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
5.2
10
ns
Qg
Total Gate Charge
35
49
nC
Qgs
Gate to Source1 Gate Charge
Qgd
Gate to Source2 “Miller” Charge
VS1S2 = 15 V, IS1S2 = 27 A,
VGS = 10 V, RGEN = 6 Ω
VS1S2 = 15 V, IS1S2 = 27 A,
VG1S1 = 10 V, VG2S2 = 0 V
5.7
nC
4.7
nC
Source1 to Source2 Diode Characteristics
Ifss
Maximum Continuous Source1 to Source2 Diode Forward Current
Vfss
Source1 to Source2 Diode Forward
Voltage
VG1S1 = 0 V, VG2S2 = 4.5 V,
Ifss = 27 A
(Note 2)
0.8
1
A
1.2
V
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b.127 °C/W when mounted on a
minimum pad of 2 oz copper.
a. 47 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
S2S
S2F
S1S
S1F
G2
S2S
S2F
S1S
S1F
G2
2. Pulse Test: Pulse Width < 300 us, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2013 Fairchild Semiconductor Corporation
FDPC4044 Rev.C2
2
www.fairchildsemi.com
FDPC4044 Common Drain N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
120
VG1S1 = 10 V
VG1S1 = 4.5 V
VG1S1 = 4 V
VG1S1 = 3.5 V
80
VG1S1 = 3 V
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VG2S2 = 4.5 V
0
0.0
0.5
1.0
1.5
2.0
120
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
80
VGS = 3.5 V
40
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
1.0
1.5
Figure 1. On-Region Characteristics
Figure 2. On-Region Characteristics
3
4
NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE
NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
VG1S1 = 3 V
2
VG1S1 = 4.5 V
VG1S1 = 4 V
VG1S1 = 3.5V
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VG2S2 = 4.5 V
VG1S1 = 10 V
0
0
40
80
120
VGS = 3 V
VGS = 3.5 V
2
VGS = 4 V
VGS = 4.5 V
1
0
0
40
80
120
Figure 4. Normalized On-Resistance vs Source1
to Source2 Current and Gate Voltage
1.6
rS1S2(on), SOURCE1 TO
1.0
0.8
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
15
IS1S2 = 27 A
10
TJ = 125 oC
5
TJ = 25 oC
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. On-Resistance vs Gate to
Source Voltage
Figure 5. Normalized On- Resistance
vs Junction Temperature
©2013 Fairchild Semiconductor Corporation
FDPC4044 Rev.C2
SOURCE2 ON-RESISTANCE (mΩ)
20
IS1S2 = 27 A
VGS = 10 V
1.2
0.6
-75
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
Figure 3. Normalized On-Resistance vs Source1
to Source2 Current and Gate Voltage
1.4
2.0
3
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE
0.5
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
3
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FDPC4044 Common Drain N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
100
Ifss, REVERSE SOURCE1 TO SOURCE2
CURRENT (A)
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
120
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VS1S2 = 5 V
80
TJ = 150 oC
TJ = 25 oC
40
VG1S1 = 0 V, VG2S2 = 4.5 V
10
TJ = 150 oC
1
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0
1
2
3
TJ = -55 oC
0.001
0.0
4
VGS, GATE TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
1.0
1.2
Figure 8. Source1 to Source2 Diode
Forward Voltage vs Source Current
10000
10
vG2S2 = 0 V, IS1S2 = 27 A
Ciss
8
VS1S2 = 10 V
CAPACITANCE (pF)
VG1S1, GATE1 TO SOURCE1 VOLTAGE (V)
Figure 7. Transfer Characteristics
6
VS1S2 = 15 V
4
VS1S2 = 20 V
1000
Coss
Crss
100
2
f = 1 MHz
VGS = 0 V
0
0
10
20
30
10
0.1
40
Qg, GATE CHARGE (nC)
P(PK), PEAK TRANSIENT POWER (W)
100 us
10
1 ms
10 ms
100 ms
1s
10 s
DC
0.1
0.01
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 127 oC/W
o
TA = 25 C
0.001
0.01
CURVE BENT TO
MEASURED DATA
0.1
1
10
100200
30
2000
1000
SINGLE PULSE
RθJA = 127 oC/W
TA = 25 oC
100
10
1
0.1
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2013 Fairchild Semiconductor Corporation
FDPC4044 Rev.C2
10
Figure 10. Capacitance vs Source1
to Source2 Voltage
200
100
1
1
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 9. Gate Charge Characteristics
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
0.2
Vfss, BODY DIODE FORWARD VOLTAGE (V)
Figure 12. Single Pulse Maximum
Power Dissipation
4
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FDPC4044 Common Drain N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 127 C/W
(Note 1b)
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDPC4044 Rev.C2
5
www.fairchildsemi.com
FDPC4044 Common Drain N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDPC4044 Common Drain N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
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©2013 Fairchild Semiconductor Corporation
FDPC4044 Rev.C2
6
www.fairchildsemi.com
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I71
©2013 Fairchild Semiconductor Corporation
FDPC4044 Rev.C2
7
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FDPC4044 Common Drain N-Channel PowerTrench® MOSFET
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