FDMS86250 N-Channel PowerTrench® MOSFET 150 V, 20 A, 25 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A Advanced package and silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested Application RoHS Compliant DC-DC Conversion Bottom Top Pin 1 S D D D S S G S D S D S D G D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 20 42 (Note 1a) 6.7 (Note 3) 180 -Pulsed A 50 Single Pulse Avalanche Energy EAS Ratings 150 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 96 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.3 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS86250 Device FDMS86250 ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev. C Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86250 N-Channel PowerTrench® MOSFET December 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V 150 V 106 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2.0 2.9 -11 mV/°C VGS = 10 V, ID = 6.7 A 19 25 VGS = 6 V, ID = 5.8 A 23 33 VGS = 10 V, ID = 6.7 A, TJ = 125 °C 35 46 VDS = 10 V, ID = 6.7 A 24 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 75 V, VGS = 0 V, f = 1 MHz 1750 2330 pF 165 220 pF 8.8 15 pF Ω 0.5 Switching Characteristics td(on) Turn-On Delay Time 14 25 tr Rise Time 4.3 10 ns td(off) Turn-Off Delay Time 22 35 ns VDD = 75 V, ID = 6.7 A, VGS = 10 V, RGEN = 6 Ω tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V VGS = 0 V to 5 V Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 75 V, ID = 6.7 A ns 4.2 10 ns 25 36 nC 14 20 nC 7.4 nC 5.5 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.72 1.2 VGS = 0 V, IS = 6.7 A (Note 2) 0.78 1.3 IF = 6.7 A, di/dt = 100 A/μs V 73 117 ns 112 180 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 1 mH, IAS = 19 A, VDD = 135 V, VGS = 10 V. ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev. C 2 www.fairchildsemi.com FDMS86250 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 4 ID, DRAIN CURRENT (A) VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 VGS = 5.5 V 40 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 6 V 30 20 VGS = 5 V 10 VGS = 4.5 V 0 0 1 2 3 4 VGS = 4.5 V VGS = 5.5 V 2 VGS = 6 V 1 0 5 0 10 30 40 50 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 80 ID = 6.7 A VGS = 10 V 2.2 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 SOURCE ON-RESISTANCE (mΩ) 2.4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics ID = 6.7 A PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 TJ = 125 oC 40 20 TJ = 25 oC 0 4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS, DRAIN TO SOURCE VOLTAGE (V) 40 VDS = 5 V 30 TJ = 150 oC 20 TJ = 25 oC 10 TJ = -55 oC 0 VGS = 5 V 3 2 3 4 5 VGS = 0 V 10 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 6 TJ = 150 oC 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev. C 3 1.2 www.fairchildsemi.com FDMS86250 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5000 VDD =75 V ID = 6.7 A Ciss 1000 8 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 100 V 6 4 Coss 100 10 Crss 2 f = 1 MHz VGS = 0 V 0 0 4 8 12 16 20 24 1 0.1 28 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 50 30 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) o RθJC = 1.3 C/W TJ = 25 oC TJ = 100 oC TJ = 125 1 0.01 0.1 oC 1 10 40 VGS = 10 V 30 VGS = 6 V 20 Limited by Package 10 0 25 100 50 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 100 o Figure 9. Unclamped Inductive Switching Capability 10 1 0.1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 1 ms 10 ms 100 ms THIS AREA IS LIMITED BY rDS(on) 0.01 SINGLE PULSE TJ = MAX RATED 1s 10 s RθJA = 125 oC/W DC TA = 25 oC 0.001 0.1 1 10 100 500 TA = 25 oC 100 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev. C SINGLE PULSE RθJA = 125 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS86250 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev. C 5 www.fairchildsemi.com FDMS86250 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS86250 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev. C 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I60 ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev. 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