FDMC6679AZ P-Channel PowerTrench® MOSFET -30 V, -20 A, 10 mΩ Features General Description HBM ESD protection level of 8 kV typical(note 3) The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. Extended VGSS range (-25 V) for battery applications Applications High performance trench technology for extremely low rDS(on) Load Switch in Notebook and Server Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A High power and current handling capability Notebook Battery Pack Power Management Termination is Lead-free and RoHS Compliant Bottom Top Pin 1 S S S D 5 4 G D 6 3 S D 7 2 S D 8 1 S G D D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG Units V ±25 V -20 (Note 1a) -Pulsed PD Ratings -30 -11.5 A -32 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 41 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.0 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC6679AZ Device FDMC6679AZ ©2009 Fairchild Semiconductor Corporation FDMC6679AZ Rev.D4 Package MLP 3.3x3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC6679AZ P-Channel PowerTrench® MOSFET June 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current -30 V 29 VDS = -24 V, mV/°C -1 VGS = 0 V, TJ = 125 °C -100 VGS = ±25 V, VDS = 0 V μA ±10 μA -3 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C -7 VGS = -10 V, ID = -11.5 A 8.6 10 rDS(on) Static Drain to Source On Resistance VGS = -4.5 V, ID = -8.5 A 12 18 VGS = -10 V, ID = -11.5 A, TJ = 125 °C 12 15 VDS = -5 V, ID = -11.5 A 46 gFS Forward Transconductance -1 -1.8 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1 MHz 2985 3970 pF 570 755 pF 500 750 pF 12 21 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg VDD = -15 V, ID = -11.5 A, VGS = -10 V, RGEN = 6 Ω 14 25 ns 63 100 ns 46 73 ns Total Gate Charge VGS = 0 V to -10 V 65 91 nC Qg Total Gate Charge VGS = 0 V to -5 V 37 52 nC Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -15 V, ID = -11.5 A 8.7 nC 17 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -11.5 A (Note 2) 0.83 1.30 VGS = 0 V, IS = -1.6 A (Note 2) 0.71 1.20 IF = -11.5 A, di/dt = 100 A/μs V 31 49 ns 16 28 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.125 °C/W when mounted on a minimum pad of 2 oz copper a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDMC6679AZ Rev.D4 2 www.fairchildsemi.com FDMC6679AZ P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 4 VGS = -10 V VGS = -6 V VGS = -4.5 V 24 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 32 VGS = -4 V VGS = -3.5 V 16 VGS = -3 V 8 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 VGS = -3 V 3 VGS = -3.5 V 2 1 VGS = -10 V VGS = -6 V 3 0 8 16 24 32 -ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 50 ID = -11.5 A VGS = -10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -4.5 V VGS = -4 V -VDS, DRAIN TO SOURCE VOLTAGE (V) ID = -11.5 A PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 40 30 20 TJ = 125 oC 10 TJ = 25 oC 0 -50 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs. Junction Temperature Figure 4. On-Resistance vs. Gate to Source Voltage 32 40 24 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS = -5 V 16 TJ = 25 oC TJ = -55 oC 8 TJ = 150 oC 0 1 2 3 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMC6679AZ Rev.D4 VGS = 0 V 10 Figure 6. Source to Drain Diode Forward Voltage vs. Source Current 3 www.fairchildsemi.com FDMC6679AZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE (V) 10 10000 ID = -11.5 A 8 CAPACITANCE (pF) Ciss VDD = -15 V 6 VDD = -10 V VDD = -20 V 4 1000 Coss Crss f = 1 MHz VGS = 0 V 2 0 0 10 20 30 40 50 60 100 0.1 70 1 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage 60 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT (A) 50 TJ = 25 oC TJ = 100 oC TJ = 125 oC 50 40 VGS = -10 V 30 VGS = -4.5 V 20 10 Limited by Package o 1 0.001 0.01 0.1 1 10 0 25 100 RθJC = 3.0 C/W 50 150 -2 -Ig, GATE LEAKAGE CURRENT (A) 10 10 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s RθJA = 125 oC/W DC TA = 25 oC 0.01 0.01 125 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 100 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) -ID, DRAIN CURRENT (A) 30 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) VGS = 0 V -3 10 -4 10 -5 10 TJ = 125 oC -6 10 TJ = 25 oC -7 10 -8 0.1 1 10 10 100 -VDS, DRAIN to SOURCE VOLTAGE (V) 5 10 15 20 25 30 35 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 12. Igss vs. Vgss Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMC6679AZ Rev.D4 0 4 www.fairchildsemi.com FDMC6679AZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 P(PK), PEAK TRANSIENT POWER (W) VGS = -10 V 100 10 SINGLE PULSE o 1 RθJA = 125 C/W o TA = 25 C 0.3 -3 10 -2 -1 10 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o 0.001 -3 10 RθJA = 125 C/W -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMC6679AZ Rev.D4 5 www.fairchildsemi.com FDMC6679AZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMC6679AZ P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEU-C08 ©2009 Fairchild Semiconductor Corporation FDMC6679AZ Rev.D4 6 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 ©2009 Fairchild Semiconductor Corporation FDMC6679AZ Rev.D4 7 www.fairchildsemi.com FDMC6679AZ P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ F-PFS™ ®* ® AX-CAP®* FRFET® Global Power ResourceSM PowerTrench® BitSiC™ ® TinyBoost GreenBridge™ PowerXS™ Build it Now™ TinyBuck® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyCalc™ ® Green FPS™ e-Series™ QFET CorePOWER™ TinyLogic® Gmax™ QS™ CROSSVOLT™ TINYOPTO™ GTO™ Quiet Series™ CTL™ TinyPower™ IntelliMAX™ Current Transfer Logic™ RapidConfigure™ TinyPWM™ ISOPLANAR™ DEUXPEED® ™ TinyWire™ Marking Small Speakers Sound Louder Dual Cool™ TranSiC™ and Better™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ TriFault Detect™ MegaBuck™ EfficentMax™ SignalWise™ TRUECURRENT®* ESBC™ MICROCOUPLER™ SmartMax™ μSerDes™ MicroFET™ SMART START™ ® MicroPak™ Solutions for Your Success™ MicroPak2™ SPM® Fairchild® ® UHC® STEALTH™ MillerDrive™ Fairchild Semiconductor ® Ultra FRFET™ SuperFET MotionMax™ FACT Quiet Series™ SuperSOT™-3 UniFET™ mWSaver® FACT® SuperSOT™-6 OptoHiT™ VCX™ FAST® ® SuperSOT™-8 OPTOLOGIC VisualMax™ FastvCore™ ® ® OPTOPLANAR SupreMOS VoltagePlus™ FETBench™ SyncFET™ XS™ FPS™ Sync-Lock™ 仙童 ™