FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. Sourced from Process 63. Block Diagram E2 E2 C2 B2 B1 C1 E1 B2 C1 C2 SC70-6 Mark: .2F E1 pin #1 B1 Figure 1. FFB2907A Device Package Figure 2. FFB2907A Internal Connections C2 E1 C2 B2 E1 E2 C1 B1 C1 B2 E2 pin #1 B1 SuperSOT™-6 Mark: .2F Dot denotes pin #1 Figure 3. FMB2907A Device Package E1 B1 E2 B2 E3 B3 E4 SOIC-16 Mark: MMPQ2907A pin #1 C1 Figure 4. FMB2907A Internal Connections B4 C2 C1 C3 C2 B2 E2 B2 E3 B3 E4 B4 C1 C1 C2 C2 C3 C3 C4 C4 C4 C4 C3 Figure 5. MMPQ2907A Device Package Figure 6. MMPQ2907A Internal Connections © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 E1 www.fairchildsemi.com 1 FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier January 2014 Part Number Top Mark Package Packing Method FFB2907A .2F SC70 6L Tape and Reel FMB2907A .2F SSOT 6L Tape and Reel MMPQ2907A MMPQ2907A SOIC 16L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -60 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base Voltage -5.0 V Collector Current - Continuous -600 mA -55 to +150 °C IC TJ, TSTG Junction and Storage Temperature Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Max. Parameter Total Device Dissipation Unit FFB2907A FMB2907A MMPQ2907A 300 700 1,000 mW 8.0 mW/°C Derate Above 25°C 2.4 5.6 Thermal Resistance, Junction to Ambient 415 180 Thermal Resistance, Junction to Ambient, Effective 4 Die 125 Thermal Resistance, Junction to Ambient, Each Die 240 °C/W Note: 3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 www.fairchildsemi.com 2 FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier Ordering Information Values are at TA = 25°C unless otherwise noted. Symbol V(BR)CEO Parameter Collector-Emitter Breakdown Voltage(4) Conditions Min. Typ. Max. Unit IC = -10 mA, IB = 0 -60 V IC = -10 μA, IE = 0 -60 V Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 Base Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA ICEX Collector Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA ICBO Collector Cut-Off Current V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO IBL hFE DC Current Gain V VCB = -50 V, IE = 0 -0.02 VCB = -50 V, IE = 0, TA = 125°C -20 IC = -0.1 mA, VCE = -10 V 75 IC = -1.0 mA, VCE = -10 V 100 IC = -10 mA, VCE = -10 V 100 V(4) 100 IC = -500 mA, VCE = -10 V(4) 50 IC = -150 mA, VCE = -10 μA 300 IC = -150 mA, IB = -15 mA -0.4 IC = -500 mA, IB = -50 mA -1.6 VCE(sat) Collector-Emitter Saturation Voltage(4) VBE(sat) Base-Emitter Saturation Voltage fT Current Gain-Bandwidth Product IC = -50 mA, VCE =- 20 V, f = 100 MHz 250 Cob Output Capacitance VCB = -10 V, IE = 0, f = 100 kHz 6.0 pF Cib Input Capacitance VEB = -2.0 V, IC = 0, f = 100 kHz 12 pF ton Turn-On Time 30 ns td Delay Time 8 ns tr Rise Time 20 ns 80 ns 60 ns 20 ns toff Turn-Off Time ts Storage Time tf Fall Time IC = -150 mA, IB = -15 mA(4) -1.3 IC = -500 mA, IB = -50 mA -2.6 VCC = -30 V, IC = -150 mA, IB1 = -15 mA VCC = -6.0 V, IC = -150 mA, IB1 = IB2 = -15 mA V V MHz Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 www.fairchildsemi.com 3 FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier Electrical Characteristics(4) VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 0.5 500 VCE = 5V 400 125 °C 0.3 300 200 100 0 0.1 25 °C 0.1 - 40 °C 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 - 40 °C 0 V BE( ON)- BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) - 40 °C 1 25 °C 0.6 10 100 I C - COLLECTOR CURRE NT (mA) 0.6 125 °C 0.4 β = 10 - 40 °C 25 °C 125 °C VCE = 5V 0.2 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 500 1 0.8 0.8 500 0 0.1 1 10 I C - COLLECTOR CURRE NT (mA) 25 Figure 10. Base-Emitter On Voltage vs. Collector Current Figure 9. Base-Emitter Saturation Voltage vs. Collector Current 100 20 V CB = 35V CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) 125 °C Figure 8. Collector-Emitter Saturation Voltage vs. Collector Current 1 0 25 °C 0.2 Figure 7. Typical Pulsed Current Gain vs. Collector Current 0.4 β = 10 0.4 10 1 0.1 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE (° C) 12 C ib 8 4 0 0.1 125 C ob 1 10 REVERSE BIAS VOLTAGE (V) 50 Figure 12. Input and Output Capacitance vs. Reverse Bias Voltage Figure 11. Collector Cut-Off Current vs. Ambient Temperature © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 16 www.fairchildsemi.com 4 FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier Typical Performance Characteristics 250 I B1 = I B2 = 200 500 Ic I B1 = I B2 = 10 400 V cc = 15 V ts 150 TIME (nS) TIME (nS) V cc = 15 V 100 tr tf 300 200 t off 50 100 t on td 0 10 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 PD - POWE R DIS SIPATION (W) I B1 - TURN 0N BASE CURRENT (mA) 50 20 t r = 15 V 5 30 ns 2 60 ns 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 1 SOIC-16 SOT-6 0.75 0.5 SC70 -6 0.25 0 500 0 25 50 75 100 TE MPE RATURE (°C) 125 150 Figure 16. Power Dissipation vs. Ambient Temperature Figure 15. Rise Time vs. Collector and Turn-On Base Current © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 100 I C - COLLECTOR CURRENT (mA) Figure 14. Turn-On and Turn-Off Times vs. Collector Current Figure 13. Switching Times vs. Collector Current 10 Ic 10 www.fairchildsemi.com 5 FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier Typical Performance Characteristics (Continued) CHAR. RELATIVE TO VALUES AT VCE = -10V CHAR. RELATIVE TO VALUES AT I C= -10mA 5 h oe h re 2 h fe 1 h ie 0.5 VCE = -10 V T A = 25 oC 0.2 0.1_ _ 1 _ _ _ 2 5 10 20 I C - COLLECTOR CURRENT (mA) _ 50 1.2 h re and hoe h re h ie h fe hoe 1.1 1 h ie 0.9 h fe 0.8 -4 I C = -10mA T A = 25oC -8 -12 -16 V CE - COLLECTOR VOLTAGE (V) -20 Figure 18. Common Emitter Characteristics Figure 17. Common Emitter Characteristics CHAR. RELATIVE TO VALUES AT TA = 25oC 1.3 1.5 I C = -10mA 1.4 V = -10 V CE 1.3 1.2 h fe h ie h re hoe 1.1 hoe 1 0.9 0.8 0.7 h re h ie 0.6 0.5 -40 h fe -20 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 Figure 19. Common Emitter Characteristics © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 www.fairchildsemi.com 6 FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier Typical Performance Characteristics (f = 1.0 kHz) FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier Physical Dimensions SC70 6L SYMM C L 2.00±0.20 0.65 A 0.50 MIN 6 4 B PIN ONE 1.25±0.10 1 1.90 3 0.30 0.15 (0.25) 0.40 MIN 0.10 0.65 A B 1.30 LAND PATTERN RECOMMENDATION 1.30 1.00 0.80 SEE DETAIL A 1.10 0.80 0.10 C 0.10 0.00 C 2.10±0.30 SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE (R0.10) 0.25 0.10 0.20 A) THIS PACKAGE CONFORMS TO EIAJ SC-88, 1996. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. D) DRAWING FILENAME: MKT-MAA06AREV6 30° 0° 0.46 0.26 SCALE: 60X Figure 20. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MAA06A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MAA06A.pdf. © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 www.fairchildsemi.com 7 FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier Physical Dimensions (Continued) SSOT 6L Figure 21. 6-LEAD, SUPERSOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA06A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA06A.pdf. © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 www.fairchildsemi.com 8 FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier Physical Dimensions (Continued) SO 16L NB 10.00 9.80 A 8.89 16 9 B 4.00 3.80 6.00 PIN ONE INDICATOR 1.75 1 5.6 8 0.51 0.35 1.27 (0.30) 0.25 M 1.27 C B A 0.65 LAND PATTERN RECOMMENDATION 1.75 MAX 1.50 1.25 SEE DETAIL A 0.25 0.10 C 0.25 0.19 0.10 C 0.50 0.25 X 45° NOTES: UNLESS OTHERWISE SPECIFIED (R0.10) GAGE PLANE A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AC, ISSUE C. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS D) CONFORMS TO ASME Y14.5M-1994 E) LANDPATTERN STANDARD: SOIC127P600X175-16AM F) DRAWING FILE NAME: M16AREV12. (R0.10) 0.36 8° 0° SEATING PLANE 0.90 0.50 (1.04) DETAIL A SCALE: 2:1 Figure 22. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/M1/M16A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-M16A.pdf. © 1998 Fairchild Semiconductor Corporation FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 www.fairchildsemi.com 9 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 © Fairchild Semiconductor Corporation www.fairchildsemi.com