FAIRCHILD PZT3906

2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
Description
This device is designed for general purpose amplifier
and switching applications at collector currents of 10 mA
to 100 mA.
2N3906
PZT3906
MMBT3906
C
C
E
E
TO-92
SOT-23
SOT-223
B
Mark:2A
EBC
C
B
Ordering Information
Part Number
Marking
Package
Packing Method
Pack Quantity
2N3906BU
2N3906
TO-92
Bulk
10000
2N3906TA
2N3906
TO-92
Ammo
2000
2N3906TAR
2N3906
TO-92
Ammo
2000
2N3906TF
2N3906
TO-92
Tape and Reel
2000
2N3906TFR
2N3906
TO-92
Tape and Reel
2000
MMBT3906
2A
SOT-23
Tape and Reel
3000
PZT3906
3906
SOT-223
Tape and Reel
2500
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1
www.fairchildsemi.com
1
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
September 2013
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
-40
V
Collector-Base Voltage
-40
V
Emitter-Base Voltage
-5.0
V
Collector Current - Continuous
-200
mA
-55 to +150
°C
VCEO
Collector-Emitter Voltage
VCBO
VEBO
IC
TJ, Tstg
Operating and Storage Junction Temperature Range
Note:
1. These ratings are based on a maximum junction temperature of 150 °C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJC
Max.
Parameter
2N3906
625
MMBT3906(2)
350
PZT3906(3)
1,000
Derate above 25°C
5.0
2.8
8.0
Thermal Resistance, Junction to Case
83.3
Total Device Dissipation
Units
mW
mW/°C
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W
Notes:
2. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
3. Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead minimum 6 cm2.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1
www.fairchildsemi.com
2
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
Absolute Maximum Ratings(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Test Condition
Min.
Max.
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
Collector-Emitter Breakdown
Voltage(4)
IC = -1.0 mA, IB = 0
Collector-Base Breakdown Voltage IC = -10 μA, IE = 0
Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0
-40
V
-40
V
-5.0
V
Base Cutoff Current
VCE = -30 V, VBE = 3.0 V
-50
nA
Collector Cutoff Current
VCE = -30 V, VBE = 3.0 V
-50
nA
ON CHARACTERISTICS
IC = -0.1 mA, VCE = -1.0 V
hFE
VCE(sat)
VBE(sat)
DC Current Gain(4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
60
IC = -1.0 mA, VCE = -1.0 V
80
IC = -10 mA, VCE = -1.0 V
100
IC = -50 mA, VCE = -1.0 V
60
IC = -100 mA, VCE = -1.0V
30
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
IC = -10 mA, IB = -1.0 mA
-0.65
IC = -50 mA, IB = -5.0 mA
300
-0.25
V
-0.4
V
-0.85
V
-0.95
V
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
IC = -10 mA, VCE = -20 V,
f = 100 MHz
Cobo
Output Capacitance
VCB = -5.0 V, IE = 0,
f = 100 kHz
4.5
pF
Cibo
Input Capacitance
VEB = -0.5 V, IC = 0,
f = 100 kHz
10.0
pF
NF
Noise Figure
IC = -100 μA, VCE = -5.0 V,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz
4.0
dB
fT
250
MHz
SWITCHING CHARACTERISTICS
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCC = -3.0 V, VBE = -0.5 V
IC = -10 mA, IB1 = -1.0 mA
VCC = -3.0 V, IC = -10 mA,
IB1 = IB2 = -1.0 mA
35
ns
35
ns
225
ns
75
ns
Note:
4. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1
www.fairchildsemi.com
3
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
Electrical Characteristics
Figure 1. Typical Pulsed Current Gain vs. Collector
Current
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 4. Base-Emitter On Voltage vs. Collector
Current
Figure 5. Collector Cut-Off Current vs. Ambient
Temperature
Figure 6. Common-Base Open Circuit Input and Output Capacitance vs. Reverse Bias Voltage
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1
www.fairchildsemi.com
4
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
Typical Performance Characteristics
Figure 7. Noise Figure vs. Frequency
Figure 8. Noise Figure vs. Source Resistance
Figure 9. Switching Times vs. Collector Current
Figure 10. Turn On and Turn Off Times vs. Collector
Current
Figure 11. Power Dissipation vs. Ambient
Temperature
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1
www.fairchildsemi.com
5
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
Typical Performance Characteristics (continued)
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
Typical Performance Characteristics (continued)
Figure 12. Voltage Feedback Ratio
Figure 13. Input Impedance
Figure 14. Output Admittance
Figure 15. Current Gain
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1
www.fairchildsemi.com
6
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
Physical Dimensions
TO-92
D
Figure 16. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM (J61Z OPTION) (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1
www.fairchildsemi.com
7
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
Physical Dimensions (continued)
SOT-223 4L
Figure 17. MOLDED PACKAGE, SOT-223, 4-LEAD (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA04A.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1
www.fairchildsemi.com
8
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
Physical Dimensions (continued)
SOT-23
0.95
2.92±0.20
3
1.40
1.30+0.20
-0.15
1
2.20
2
0.60
0.37
(0.29)
0.95
0.20
1.00
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
0.10
0.00
(0.93)
0.10
C
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
0.23
0.08
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
0.25
0.20 MIN
(0.55)
SEATING
PLANE
SCALE: 2X
Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packaging/tr/SOT23-3L_tr.pdf.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1
www.fairchildsemi.com
9
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intended to be an exhaustive list of all such trademarks.
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F-PFS¥
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SM
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GTO¥
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Making Small Speakers Sound Louder
and Better™
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®
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Programmable Active Droop¥
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Saving our world, 1mW/W/kW at a time™
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SPM®
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SuperSOT¥-3
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®*
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I66
© Fairchild Semiconductor Corporation
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