MMBTA92 / PZTA92 PNP High-Voltage Amplifier Description This device is designed for high-voltage driver applications. Sourced from process 76. C C E E SOT-23 Mark: 2D C SOT-223 B Figure 1. MMBTA92 Device Package B Figure 2. PZTA92 Device Package Ordering Information Part Number Top Mark Package Packing Method MMBTA92 2D SOT-23 3L Tape and Reel PZTA92 A92 SOT-223 4L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -300 V VCBO Collector-Base Voltage -300 V VEBO Emitter-Base Voltage -5 V -500 mA -55 to +150 °C IC TJ, TSTG Collector Current - Continuous Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 1997 Fairchild Semiconductor Corporation MMBTA92 / PZTA92 Rev. 1.1.0 www.fairchildsemi.com 1 MMBTA92 / PZTA92 — PNP High-Voltage Amplifier March 2014 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Max. Parameter MMBTA92 Total Device Dissipation 350 (3) PZTA92(4) Unit 1000 mW Derate Above 25°C 2.8 8.0 mW/°C Thermal Resistance, Junction to Ambient 357 125 °C/W Notes: 3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch. 4. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Conditions Min. V(BR)CEO Collector-Emitter Breakdown Voltage(5) Parameter Max. Unit IC = -1.0 mA, IB = 0 -300 V V(BR)CBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -300 V V(BR)EBO -5.0 Emitter-Base Breakdown Voltage IE = -100 μA, IC = 0 ICBO Collector Cut-Off Current VCB = -200 V, IE = 0 -0.25 μA IEBO Emitter Cut-Off Current VEB = -3.0 V, IC = 0 -0.1 μA hFE DC Current Gain(5) IC = -1.0 mA, VCE = -10 V 25 IC = -10 mA, VCE = -10 V 40 IC = -30 mA, VCE = -10 V 25 V 250 VCE(sat) Collector-Emitter Saturation Voltage(5) IC = -20 mA, IB = -2.0 mA -0.5 V VBE(sat) Base-Emitter Saturation Voltage(5) IC = -20 mA, IB = -2.0 mA -0.9 V fT Current Gain - Bandwidth Product IC = -10 mA, VCE = -20 V, f = 100 MHz Collector-Base Capacitance VCB = -20 V, IE = 0, f = 1.0 MHz Ccb 50 MHz 6.0 pF Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 1997 Fairchild Semiconductor Corporation MMBTA92 / PZTA92 Rev. 1.1.0 www.fairchildsemi.com 2 MMBTA92 / PZTA92 — PNP High-Voltage Amplifier Thermal Characteristics VCESAT- COLLE CTOR-EMITTER VOLTAGE (V) h FE - DC CURRE NT GAIN 140 120 125 °C 100 0.4 80 25 °C 60 - 40 °C 40 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 - 40 °C 0.1 V BE(O N) - BASE-EMITTER ON VOLTAGE (V) 1 1 10 I C - COLLECTOR CURRENT (mA) 100 0.9 1 0.8 0.8 - 40 °C 0.7 - 40 °C 0.6 25 °C 0.6 125 °C 0.5 25 °C 125 °C 0.4 β = 10 0.4 V CE = 5V 0.2 1 10 I C - COLLE CTOR CURRENT ( mA) 100 JUNCTION CAPACITANCE (pF) 100 VC B= 150V 10 1 0.1 25 50 75 100 125 T A - AMBIENT TE MPERATURE (°C) 10 I C - COLLECTOR CURRENT (mA) 100 10 f = 1.0 MHz C ib 1 C ob 0.1 0.1 150 1 10 V R - REVERSE VOLTAGE (V) 100 Figure 8. Junction Capacitance vs. Reverse-Bias Voltage Figure 7. Collector Cut-Off Current vs. Ambient Temperature © 1997 Fairchild Semiconductor Corporation MMBTA92 / PZTA92 Rev. 1.1.0 1 Figure 6. Base-Emitter On Voltage vs. Collector Current Figure 5. Base-Emitter Saturation Voltage vs. Collector Current I CBO - COLLECTOR CURRENT (nA) 25 °C Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current Figure 3. Typical Pulsed Current Gain vs. Collector Current V BESAT - BASE -EMITTER VOLTAG E (V) 125 °C 0.2 VCE = 5V 20 0.3 β = 10 0.6 www.fairchildsemi.com 3 MMBTA92 / PZTA92 — PNP High-Voltage Amplifier Typical Performance Characteristics f T - GAIN BANDWIDTH PRODUCT (MHz) 100 1 P D - POWER DISSIPATION (W) VCE = 50V 80 SOT-223 0.75 V CE = 15V 60 40 TO-92 0.5 SOT-23 0.25 20 0 0 1 10 20 50 100 I C - COLLECTOR CURRENT (mA) 25 50 75 100 TEMPERATURE ( oC) 125 150 Figure 10. Power Dissipation vs. Ambient Temperature Figure 9. Gain Bandwidth Product vs. Collector Current © 1997 Fairchild Semiconductor Corporation MMBTA92 / PZTA92 Rev. 1.1.0 0 www.fairchildsemi.com 4 MMBTA92 / PZTA92 — PNP High-Voltage Amplifier Typical Performance Characteristics (Continued) MMBTA92 / PZTA92 — PNP High-Voltage Amplifier Physical Dimensions SOT-23 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 11. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf. © 1997 Fairchild Semiconductor Corporation MMBTA92 / PZTA92 Rev. 1.1.0 www.fairchildsemi.com 5 MMBTA92 / PZTA92 — PNP High-Voltage Amplifier Physical Dimensions (Continued) SOT-223 Figure 12. MOLDED PACKAGING, SOT-223, 4-LEAD (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA04A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf. © 1997 Fairchild Semiconductor Corporation MMBTA92 / PZTA92 Rev. 1.1.0 www.fairchildsemi.com 6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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