2N3906 - Fairchild Semiconductor

2N3906 / MMBT3906 / PZT3906
PNP General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier
and switching applications at collector currents of 10 mA
to 100 mA.
2N3906
PZT3906
MMBT3906
C
C
E
E
TO-92
SOT-23
SOT-223
B
Mark:2A
EBC
C
B
Ordering Information
Part Number
Marking
Package
Packing Method
Pack Quantity
2N3906BU
2N3906
TO-92 3L
Bulk
10000
2N3906TA
2N3906
TO-92 3L
Ammo
2000
2N3906TAR
2N3906
TO-92 3L
Ammo
2000
2N3906TF
2N3906
TO-92 3L
Tape and Reel
2000
2N3906TFR
2N3906
TO-92 3L
Tape and Reel
2000
MMBT3906
2A
SOT-23 3L
Tape and Reel
3000
PZT3906
3906
SOT-223 4L
Tape and Reel
2500
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
www.fairchildsemi.com
1
2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier
April 2014
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
VCEO
Collector-Emitter Voltage
-40
V
VCBO
Collector-Base Voltage
-40
V
VEBO
Emitter-Base Voltage
-5.0
V
-200
mA
-55 to +150
°C
IC
TJ, TSTG
Parameter
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Note:
1. These ratings are based on a maximum junction temperature of 150°C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Maximum
Parameter
Total Device Dissipation
Unit
2N3906(3)
MMBT3906(2)
PZT3906(3)
625
350
1,000
mW
2.8
8.0
mW/°C
Derate Above 25°C
5.0
RθJC
Thermal Resistance, Junction to Case
83.3
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
357
125
°C/W
Notes:
2. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
www.fairchildsemi.com
2
2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier
Absolute Maximum Ratings(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
Voltage(4)
V(BR)CBO
V(BR)EBO
IBL
ICEX
IC = -1.0 mA, IB = 0
-40
V
Collector-Base Breakdown Voltage IC = -10 μA, IE = 0
-40
V
Emitter-Base Breakdown Voltage
IE = -10 μA, IC = 0
-5.0
V
Base Cut-Off Current
VCE = -30 V, VBE = 3.0 V
-50
nA
Collector Cut-Off Current
VCE = -30 V, VBE = 3.0 V
-50
nA
ON CHARACTERISTICS
hFE
DC Current
Gain(4)
VCE(sat)
Collector-Emitter Saturation
Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = -0.1 mA, VCE = -1.0 V
60
IC = -1.0 mA, VCE = -1.0 V
80
IC = -10 mA, VCE = -1.0 V
100
IC = -50 mA, VCE = -1.0 V
60
IC = -100 mA, VCE = -1.0V
30
300
IC = -10 mA, IB = -1.0 mA
-0.25
IC = -50 mA, IB = -5.0 mA
-0.40
IC = -10 mA, IB = -1.0 mA
-0.65
IC = -50 mA, IB = -5.0 mA
-0.85
-0.95
V
V
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
IC = -10 mA, VCE = -20 V,
f = 100 MHz
Cobo
Output Capacitance
VCB = -5.0 V, IE = 0,
f = 100 kHz
4.5
pF
Cibo
Input Capacitance
VEB = -0.5 V, IC = 0,
f = 100 kHz
10.0
pF
NF
Noise Figure
IC = -100 μA, VCE = -5.0 V,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz
4.0
dB
35
ns
35
ns
225
ns
75
ns
fT
250
MHz
SWITCHING CHARACTERISTICS
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCC = -3.0 V, VBE = -0.5 V
IC = -10 mA, IB1 = -1.0 mA
VCC = -3.0 V, IC = -10 mA,
IB1 = IB2 = -1.0 mA
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
www.fairchildsemi.com
3
2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier
Electrical Characteristics
V CESAT - COLLECTOR EMITTER VOLTAGE (V)
h F E - TYPICAL PULSED CURRENT GAIN
250
V CE = 1 .0V
150
100
- 40 °C
50
0.1
0.2
0.5 1
2
5
10 20
I C - COLLECTOR CURRE NT (mA)
50
100
125°C
β = 10
- 40 °C
- 40 °C
1
10
100
I C - COLLECTOR CURRENT (mA)
25 °C
1
- 40 °C
0.6
125 °C
25 °C
125 °C
0.4
0.4
V CE = 1V
0.2
0.2
1
10
100
I C - COLLECTOR CURRE NT (mA)
200
CB
CAPACITANCE (pF)
1
0.1
50
75
100
TA - AMBIE NT TEMP ERATURE (° C)
8
25
C obo
6
4
C ibo
2
0
0.1
125
1
REVERSE BIAS VOLTAGE (V)
10
Figure 6. Common-Base Open Circuit Input and Output Capacitance vs. Reverse Bias Voltage
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
1
10
I C - COLLECTOR CURRENT (mA)
10
= 25V
10
0.01
25
0
0.1
Figure 4. Base-Emitter On Voltage vs.
Collector Current
100
V
200
0.8
0.8
0.6
0
VBE( ON)- BASE EMITTER ON VOLTAGE (V)
V BESAT - BASE EM ITTE R VOLTAGE (V)
0.1
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
I CBO - COLLE CTOR CURRENT (nA)
25 °C
0.05
Figure 1. Typical Pulsed Current Gain vs. Collector
Current
0
0.2
0.15
25 °C
1
β = 10
0.25
125 °C
200
0.3
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4
2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier
Typical Performance Characteristics
6
12
V CE = 5.0V
f = 1.0 kHz
5
NF - NOISE FIGURE (dB)
NF - NOISE FIGURE (dB)
V CE = 5.0V
4
3
I C = 100 μA, R S = 200Ω
2
I C = 1.0 mA, R S = 200Ω
1
I C = 100 μA, R S = 2.0 kΩ
0
0.1
1
10
f - FREQUENCY (kHz)
I C = 1.0 mA
8
6
4
I C = 100 μA
2
0
0.1
100
1
10
R S - SOURCE RESISTANCE ( kΩ )
100
Figure 8. Noise Figure vs. Source Resistance
Figure 7. Noise Figure vs. Frequency
500
500
ts
tf
10
I B1 = I B2 =
tr
Ic
t off
100
TIME (nS)
100
TIME (nS)
10
t on I
B1 =
Ic
10
t on
VBE(OFF) = 0.5V
10
t off I = I =
B1
B2
10
Ic
10
td
1
1
10
I C - COLLECTOR CURRENT (mA)
1
100
1
I
10
- COLLECTOR CURRENT (mA)
100
Figure 10. Turn-On and Turn-Off Times vs.
Collector Current
Figure 9. Switching Times vs. Collector Current
PD - POWER DISSIPATION (W)
1
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
TEMPERATURE (o C)
125
150
Figure 11. Power Dissipation vs.
Ambient Temperature
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
www.fairchildsemi.com
5
2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier
Typical Performance Characteristics (Continued)
)
10
h ie - INPUT IMPEDANCE (k Ω)
_ 4
h re - VOLTAGE FEEDBACK RATIO (x10
100
10
1
0.1
1
I C - COLLECTOR CURRENT (mA)
1
0.1
0.1
10
1000
V CE = 10 V
f = 1.0 kHz
10
V CE = 10 V
f = 1.0 kHz
500
h fe - CURRENT GAIN
h oe - OUTPUT ADMITTANCE ( μmhos)
1
I C - COLLECTOR CURRENT (mA)
Figure 13. Input Impedance
Figure 12. Voltage Feedback Ratio
1000
VCE = 10 V
f = 1.0 kHz
100
200
100
50
20
10
0.1
1
I C - COLLECTOR CURRENT (mA)
10
0.1
10
10
Figure 15. Current Gain
Figure 14. Output Admittance
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
1
I C - COLLECTOR CURRENT (mA)
www.fairchildsemi.com
6
2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier
Typical Performance Characteristics (Continued)
2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier
Physical Dimensions
TO-92 (Bulk)
D
Figure 16. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
www.fairchildsemi.com
7
2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier
Physical Dimensions (Continued)
TO-92 (Ammo, Tape and Reel)
Figure 17. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
www.fairchildsemi.com
8
2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier
Physical Dimensions (Continued)
SOT-23
0.95
2.92±0.20
3
1.40
1.30+0.20
-0.15
1
(0.29)
2
0.95
1.90
2.20
0.60
0.37
0.20
A B
1.90
1.00
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
0.10
0.00
(0.93)
0.10
C
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
0.23
0.08
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
0.25
0.20 MIN
(0.55)
SEATING
PLANE
SCALE: 2X
Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
www.fairchildsemi.com
9
2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier
Physical Dimensions (Continued)
SOT-223 4L
Figure 19. MOLDED PACKAGE, SOT-223, 4-LEAD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA04A.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
www.fairchildsemi.com
10
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I68
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