FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Block Diagram E2 E2 C2 B2 B1 C1 E1 B2 C1 C2 SC70-6 Mark: .1A E1 pin #1 B1 Figure 1. FFB3904 Device Package Figure 2. FFB3904 Internal Connection C2 E1 C1 B2 E2 C2 B2 E1 E2 C1 B1 pin #1 B1 SuperSOT™-6 Mark: .1A Dot denotes pin #1 Figure 3. FMB3904 Device Package E1 B1 E2 B2 SOIC-16 E3 B3 E4 pin #1 C1 Figure 4. FMB3904 Internal Connection B4 C2 C1 C3 C2 E1 B1 E2 B2 E3 B3 E4 B4 C1 C1 C2 C2 C3 C3 C4 C4 C4 C4 C3 Mark: MMPQ3904 Figure 5. MMPQ3904 Device Package Figure 6. MMPQ3904 Internal Connection © 1998 Fairchild Semiconductor Corporation FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 www.fairchildsemi.com 1 FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier December 2013 Part Number Top Mark Package Packing Method FFB3904 .1A SC70 6L Tape and Reel FMB3904 .1A SSOT 6L Tape and Reel MMPQ3904 MMPQ3904 SOIC 16L Tape and Reel Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V 200 mA -55 to +150 °C IC TJ, TSTG Collector Current - Continuous Operating and Storage Junction Temperature Range Note: 1. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal Characteristics(2) Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Max. Parameter Unit FFB3904 FMB3904 MMPQ3904 Total Device Dissipation 300 700 1,000 mW Derate above 25°C 2.4 5.6 8.0 mW/°C Thermal Resistance, Junction to Ambient 415 180 Thermal Resistance, Junction to Ambient, Effective 4 Die 125 Thermal Resistance, Junction to Ambient, Each Die 240 °C/W Note: 2. PCB size: FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © 1998 Fairchild Semiconductor Corporation FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 www.fairchildsemi.com 2 FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier Ordering Information Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 60 V Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 V Base Cut-Off Current VCE = 30 V, VBE = -3 V 50 nA Collector Cut-Off Current VCE = 30 V, VBE = -3 V 50 nA V(BR)EBO IBL ICEX On Characteristics(3) FFB3904, FMB3904 MMPQ3904 FFB3904, FMB3904 hFE DC Current Gain MMPQ3904 FFB3904, FMB3904 MMPQ3904 IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V 40 30 70 50 100 75 All Devices IC = 50 mA, VCE = 1.0 V 60 All Devices IC = 100 mA, VCE = 1.0 V 30 VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage 300 IC = 10 mA, IB = 1.0 mA 0.2 IC = 50 mA, IB = 5.0 mA 0.3 IC = 10 mA, IB = 1.0 mA 0.65 0.85 IC = 50 mA, IB = 5.0 mA 0.95 V V Small-Signal Characteristics (MMPQ3904 only) Current Gain-Bandwidth Product IC = 10 mA, VCE = 20 V, f = 100 MHz 250 MHz Cob Output Capacitance VCB = 5.0 V, IE = 0, f = 140 kHz 4.0 pF Cib Input Capacitance VBE = 0.5 V, IC = 0, f = 140 kHz 8.0 pF fT Note: 3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 1998 Fairchild Semiconductor Corporation FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 www.fairchildsemi.com 3 FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier Electrical Characteristics VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN 500 V CE = 5V 400 125 °C 300 25 °C 200 - 40 °C 100 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 1 125 °C 25 °C 0.05 0.1 - 40 °C 25 °C 1 VCE = 5V 0.4 1 10 - COLLECTOR CURRENT (mA) 25 °C 125 °C 0.2 0.1 100 Figure 9. Base-Emitter Saturation Voltage vs. Collector Current 1 10 I C - COLLECTOR CURRENT (mA) 100 Figure 10. Base-Emitter On Voltage vs. Collector Current 10 500 f = 1.0 MHz CAPACITANCE (pF) VCB = 30V 10 1 0.1 25 - 40 °C 0.4 125 °C 100 100 0.6 0.6 0.1 1 10 I C - COLLECTOR CURRENT (mA) Figure 8. Collector-Emitter Saturation Voltage vs. Collector Current β = 10 IC ICBO- COLLECTOR CURRENT (nA) - 40 °C 0.8 0.8 β = 10 0.1 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Figure 7. Typical Pulsed Current Gain vs. Collector Current 0.15 50 75 100 125 TA - AMBIENT TEMPERATURE ( °C) 4 3 Cib 2 C ob 1 0.1 150 Figure 11. Collector Cut-Off Current vs. Ambient Temperature 1 10 REVERSE BIAS VOLTAGE (V) 100 Figure 12. Capacitance vs. Reverse Bias Voltage © 1998 Fairchild Semiconductor Corporation FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 5 www.fairchildsemi.com 4 FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier Typical Performance Characteristics 12 I C = 1.0 mA R S = 200Ω 10 V CE = 5.0V I C = 1.0 mA NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) 12 I C = 50 μA R S = 1.0 kΩ 8 I C = 0.5 mA R S = 200Ω 6 4 2 I C = 100 μA, R S = 500 Ω 0 0.1 1 10 f - FREQUENCY (kHz) 6 V CE = 40V I C = 10 mA 10 100 f - FREQUENCY (MHz) 2 SOIC-16 0.5 SC70 -6 0.25 VCC = 40V t r - RISE TIME (ns) TIME (nS) 10 125 150 100 I B1 = I B2 = Ic 10 T J = 25°C T J = 125°C 10 t d @ VCB = 0V 5 100 Figure 17. Turn-On Time vs. Collector Current 1 10 I C - COLLECTOR CURRENT (mA) 100 Figure 18. Rise Time vs. Collector Current © 1998 Fairchild Semiconductor Corporation FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 50 75 100 TE MPE RATURE (°C) 10 2.0V 10 I C - COLLECTOR CURRENT (mA) 25 500 Ic 15V 1 0 Figure 16. Power Dissipation vs. Ambient Temperature t r @ V CC = 3.0V 5 SOT-6 0.75 0 40V 100 100 1 Figure 15. Current Gain and Phase Angle vs. Frequency I B1 = I B2 = 1 10 R S - SOURCE RESISTANCE ( kΩ Ω) Figure 14. Noise Figure vs. Source Resistance 1000 500 I C = 100 μA 4 PD - POWE R DIS SIPATION (W) - CURRENT GAIN (dB) fe h θ I C = 50 μA 0 0.1 θ - DEGREES 0 20 40 60 80 100 120 140 160 180 h fe 1 I C = 5.0 mA 8 100 Figure 13. Noise Figure vs. Frequency 50 45 40 35 30 25 20 15 10 5 0 10 www.fairchildsemi.com 5 FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier Typical Performance Characteristics (Continued) T J = 25°C I B1 = I B2 = 500 Ic I B1 = I B2 = 10 t f - FALL TIME (ns) t S - STORAGE TIME (ns) 500 100 T J = 125°C T J = 25°C 10 1 10 I C - COLLECTOR CURRENT (mA) 5 100 Figure 19. Storage Time vs. Collector Current 100 V CE = 10 V f = 1.0 kHz T A = 25oC 100 10 0.1 1 I C - COLLECTOR CURRENT (mA) 1 10 10 1 0.1 _ h re - VOLTAGE FE EDBACK RATIO (x10 4 ) V CE = 10 V f = 1.0 kHz T A = 25oC 1 1 I C - COLLECTOR CURRENT (mA) 10 Figure 23. Input Impedance 10 10 V CE = 10 V f = 1.0 kHz T A = 25oC 7 5 4 3 2 1 0.1 1 I C - COLLE CTOR CURRENT (mA) 10 Figure 24. Voltage Feedback Ratio © 1998 Fairchild Semiconductor Corporation FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 1 I C - COLLECTOR CURRENT (mA) Figure 22. Output Admittance 10 0.1 0.1 100 V CE = 10 V f = 1.0 kHz T A = 25oC Figure 21. Current Gain 100 10 I C - COLLECTOR CURRENT (mA) Figure 20. Fall Time vs. Collector Current h oe - OUTPUT ADMITTANCE (μ mhos) 500 h ie - INPUT IMPEDANCE (kΩ ) VCC = 40V 100 10 5 h fe - CURRENT GAIN T J = 125°C Ic 10 www.fairchildsemi.com 6 FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier Typical Performance Characteristics (Continued) FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier Physical Dimensions SC70 6L SYMM C L 2.00±0.20 0.65 A 0.50 MIN 6 4 B PIN ONE 1.25±0.10 1 1.90 3 0.30 0.15 (0.25) 0.40 MIN 0.10 0.65 A B 1.30 LAND PATTERN RECOMMENDATION 1.30 1.00 0.80 SEE DETAIL A 1.10 0.80 0.10 C 0.10 0.00 C 2.10±0.30 SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE (R0.10) 0.25 0.10 0.20 A) THIS PACKAGE CONFORMS TO EIAJ SC-88, 1996. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. D) DRAWING FILENAME: MKT-MAA06AREV6 30° 0° 0.46 0.26 SCALE: 60X Figure 25. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MAA06A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MAA06A.pdf. © 1998 Fairchild Semiconductor Corporation FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 www.fairchildsemi.com 7 FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier Physical Dimensions (Continued) SSOT 6L Figure 26. 6-LEAD, SUPERSOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA06A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA06A.pdf. © 1998 Fairchild Semiconductor Corporation FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 www.fairchildsemi.com 8 FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier Physical Dimensions (Continued) SO 16L NB 10.00 9.80 A 8.89 16 9 B 4.00 3.80 6.00 PIN ONE INDICATOR 1.75 1 5.6 8 0.51 0.35 1.27 (0.30) 0.25 M 1.27 C B A 0.65 LAND PATTERN RECOMMENDATION 1.75 MAX 1.50 1.25 SEE DETAIL A 0.25 0.10 C 0.25 0.19 0.10 C 0.50 0.25 X 45° NOTES: UNLESS OTHERWISE SPECIFIED (R0.10) GAGE PLANE A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AC, ISSUE C. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS D) CONFORMS TO ASME Y14.5M-1994 E) LANDPATTERN STANDARD: SOIC127P600X175-16AM F) DRAWING FILE NAME: M16AREV12. (R0.10) 0.36 8° 0° SEATING PLANE 0.90 0.50 (1.04) DETAIL A SCALE: 2:1 Figure 27. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/M1/M16A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-M16A.pdf. © 1998 Fairchild Semiconductor Corporation FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 www.fairchildsemi.com 9 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 © Fairchild Semiconductor Corporation www.fairchildsemi.com