FAIRCHILD FTM3725

FTM3725
FTM3725
NPN Transistor
• This device is designed for high current, low impedance line driver
applications.
• Sourced from process 26.
E1
E2
B1
B2
B4
E3
E4
B4
C4
C4
C3
C4
C2
C2
C1
C1
SOIC-16
Mark: FTM3725
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
VCEO
Collector-Emitter Voltage
Parameter
Value
40
Units
V
VCBO
VEBO
Collector-Base Voltage
60
V
Emitter-Base Voltage
6.0
IC
Collector Current
V
1.2
A
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 ~ 150
°C
- Continuous
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Condition
Min.
Typ.
Max.
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage *
IC = 10mA, IB = 0
40
V
V(BR)CES
Collector-Emitter Breakdown Voltage
IC = 10µA, VBE = 0
60
V
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10µA, IE = 0
60
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
6.0
ICBO
Collector Cutoff Current
VCB = 50V, IE = 0
VCB = 50V, IE = 0, Ta = 100°C
V
100
10
nA
µA
On Characteristics *
hFE
DC Current Gain
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V, Ta = 55°C
IC = 300mA, VCE = 1.0V
IC = 500mA, VCE = 1.0V
IC = 500mA, VCE = 1.0V, Ta = 55°C
IC = 800mA, VCE = 2.0V
IC = 1.0mA, VCE = 5.0V
30
60
30
40
35
20
20
25
180
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
IC = 100mA, IB = 10mA
IC = 300mA, IB = 30mA
IC = 500mA, IB = 50mA
IC = 800mA, IB = 80mA
IC = 1.0mA, IB = 100mA
0.25
0.26
0.4
0.52
0.8
0.95
V
V
V
V
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
IC = 100mA, IB = 10mA
IC = 300mA, IB = 30mA
IC = 500mA, IB = 50mA
IC = 800mA, IB = 80mA
IC = 1.0mA, IB = 100mA
0.76
0.86
1.1
1.2
1.5
1.7
V
V
V
V
V
V
©2004 Fairchild Semiconductor Corporation
Rev. B, June 2004
Symbol
Parameter
Small Signal Characteristics
Test Condition
Min.
Typ.
Max.
Units
fT
Current Gain Bandwidth Product
IC = 50mA, VCE = 10V, f = 100MHz
Cobo
Output Capacitance
VCB = 10V, IE = 0, f = 1.0MHz
250
15
MHz
pF
Cibo
Input Capacitance
VEB = 0.5V, IC = 0, f = 1.0MHz
65
pF
Switching Characteristics
ton
Turn-on Time
td
Delay Time
tr
Rise Time
toff
Turn-off Time
ts
Storage Time
tf
Fall Time
VCC = 30V, VBE = 3.8V
IC = 500mA, IB1 = 50mA
VCC = 30V, IC = 500mA
IB1 = IB2 = 50mA
20
ns
10
ns
12
ns
250
ns
235
ns
15
ns
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
PD
Parameter
Total Device Dissipation
Derate above 25°C
Max.
1.0
8.0
Units
W
mW/°C
RθJA
Thermal Resistance, Junction to Ambient
Effectine 4 Die
Each Die
125
240
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. B, June 2004
FTM3725
Electrical Characteristics* (Continued) Ta=25°C unless otherwise noted
FTM3725
Package Dimensions
SOIC-16
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. B, June 2004
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As used herein:
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2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
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when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
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result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I11