AN-9080 Motion SPM® 5 Series Version 2 User`s Guide

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AN-9080
Motion SPM® 5 Series Version 2 User’s Guide
Table of Contents
1. Introduction ............................................................. 2
5. New Key Parameter Design Guidance...................13
1.1 About this Application Note ......................... 2
5.1 Thermal Sensing Unit (TSU) ......................13
1.2 Design Concept ............................................. 2
5.2 Bootstrap Circuit Design .............................14
1.3 Features ......................................................... 2
5.3 Minimum Pulse Width ................................17
2. Product Selections ................................................... 3
5.4 Short Circuit SOA .......................................17
2.1 Ordering Information .................................... 3
6. Application Example .............................................18
2.2 Product Line-up ............................................ 3
6.1 General Application Circuit Examples........18
2.3 SPM5 Version Comparison .......................... 3
6.2 Recommended Wiring of Shunt Resistor ....19
3. Package .................................................................... 4
6.3 Snubber Capacitor .......................................19
3.1 Internal Circuit Diagram ............................... 4
6.4 PCB Layout Guidance .................................19
3.2 Pin Description ............................................. 4
6.5 Heatsink Mounting ......................................20
3.3 Package Structure ......................................... 5
6.6 System Performance....................................21
3.4 Package Outline ............................................ 6
7. Handling Guide and Packing Information .............22
3.5 Marking Specification................................... 7
7.1 Handling Precaution ....................................22
4. Integrated Functions and Protection Circuit .......... 11
7.2 Packing Specification ..................................23
4.1 Internal Structure of HVIC ......................... 11
8. Related Resources ..................................................28
4.2 Circuit of Input Signal (VIN(H), VIN(L)) ......... 11
4.3 Functions vs. Control Supply Voltage ........ 11
4.4 Under-Voltage Protection ........................... 12
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
www.fairchildsemi.com
AN-9080
1.
APPLICATION NOTE
Introduction
1.1. About this Application Note
1.3. Features
This application note is about Motion SPM® 5 Series
Version 2 products. It should be used in conjunction with
the datasheet, reference designs, and related application
notes listed in Related Resources. This note focuses on the
difference between Version 2 and the previous versions of
SPM parts, with emphasis on new IC functions
The detailed features and integrated functions are:
 Variety of products with different voltage and power
ratings: 250/500/600 V 3-phase FRFET
inverter ,including HVICs
 Three divided negative DC-link terminals for leg current
sensing
1.2. Design Concept
 HVIC for gate driving of FRFET, under-voltage
protection, and thermal sensing functions
The key design objective of the SPM 5 series is to provide a
compact and reliable inverter solution for small power
motor drive applications. Ongoing efforts have improved
the performance, quality, and power rating of SPM 5 series
products and the Version 2 products are the latest results of
these enhancements. The new features include temperaturesensing capability, built-in bootstrap diodes, and upgraded
ruggedness. Two higher power rating devices based on
super-junction MOSFET technology are added to cover
higher power rating applications without significantly
increasing cost.
 3.3/5 V Schmitt trigger input with active HIGH logic
 Built-in bootstrap diodes
 Single-grounded power supply and optocoupler-less
interface due to built-in HVIC
 Minimized standby current of HVIC for energy regulation
 Packages; DIP, SMD, Double-DIP, Zigzag-DIP
 Isolation voltage rating of 1500 VRMS for 1 minute
The MOSFETs in SPM 5 series are specially processed to
reduce the amount of body-diode reverse recovery charge to
minimize the switching loss and enable fast switching
operations. Softness of the reverse-recovery characteristics
is managed through advanced MOSFET design with
optimized gate resistor selections to contain Electromagnetic
Interference (EMI) noise within a reasonable range.
 Moisture Sensitive Level 3 (MSL3) for SMD package
SPM 5 series has six fast-recovery MOSFETs (FRFET®)
and three high-voltage half-bridge gate drive ICs. These
MOSFETs and HVICs are not available as discrete parts.
An FRFET-based power module has much better
ruggedness and a larger safe operation area (SOA) than
IGBT-based module or Silicon-On-Insulator modules.
The FRFET-based power module has a big advantage in
light-load efficiency over IGBT-based because the voltage
drop across the transistor decreases linearly as current
decrease, whereas IGBT Vce saturation voltage stays at the
threshold level. Some applications require continuous
operation at light load except short transients and improving
the efficiency in the light-load condition is the key to saving
energy. Refrigerators, water circulation pumps, and some
fans are good examples.
The temperature-sensing function of version 2 products is
implemented in the HVIC to enhance system reliability. An
analog voltage proportional to the temperature of the HVIC
is provided for monitoring the module temperature and
necessary protections against over-temperature situations.
Three internal bootstrap diodes with resistive characteristics
reduce the number of external components and make the
PCB design more compact, beneficial when designing an
inverter built inside the motor.
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
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AN-9080
2.
APPLICATION NOTE
Product Selections
2.1. Ordering Information
Fairchild’s online loss and temperature simulation tool,
Motion
Control
Design
Tool,
available
at:
(http://www.fairchildsemi.com/support/design-tools/motioncontrol-design-tool/), is recommended to select the best
SPM product by power rating for the desired application.
FSB50250XX(D)
BSD in Ver.1 & 1.5
Package
blank : W/O BSD
D : With BSD
blank : DIP
S : SMD
T : Double DIP
B : Zigzag DIP
2.3. SPM 5 Version Comparison
blank : Ver.1
Version U : Ver.1.5
A : Ver.2
SF : Ver.2 with SuperFET2
As can be seen from Table 2, version s “V2” products have
at least the same or lower RDS_max compared with the
predecessors; lower RDS_max values than older version are in
red. Old version products were not released at the same time,
and, therefore, there are differences even within the same
version products. V2 products are being released at the same
time with consistent features. V2 products are more rugged
than previous versions in many respects.
Voltage Rating ( x 10 )
Comparative Current Rating ( Not in Amps )
Motion SPM® 5 Series
Figure 1. Ordering Information
2.2. Product Line-up
Table 1 shows the basic line up without package variations.

VCC-COM and VB-VS surge noise immunity level
increased about 50%. In other words, when a singlesurge pulse comes in between these pins, V2 products
endure 50% higher surge voltage without malfunction.
 Destruction level against surge pulses consecutively
coming in between Vb and VS improved significantly.
 Problems associated with intermittent latch-on/off due
to manufacturing issue have been resolved. Previous
version products have been updated accordingly.
VCC quiescent current increased due to the TSU function. It
does not have much effect on selecting the bootstrap
capacitor value, but stand-by power is increased by about
2.1 mW. There is no change in quiescent current of VBS.
Table 1. Product Offerings
Current Rating
Part
Number
BVDSS
FSB50325A
250
0.90
1.70
1.10
1.70
10.2
FSB50825A
250
1.90
3.60
0.33
0.45
8.8
FSB50250A
500
0.60
1.20
2.50
3.80
9.3
FSB50450A
500
0.80
1.50
1.90
2.40
8.9
FSB50550A
500
1.10
2.00
1.00
1.40
8.6
FSB50660SF
600
1.60
3.10
0.60
0.70
8.8
FSB50760SF
600
1.90
3.60
0.46
0.53
8.6
IDRMS ID25
RƟJC
RDS(on) RDS(on) (Max.)
(Typ.) (Max.)
Table 2. SPM 5 Version Comparison
Silicon Technology
60 V
250 V
Line-Up
&
RDS(on)max
500 V
V1
V1.5
V2
CFET
UniFET™
UniFET™ / SuperFET® 2
FSB52006: 80 mΩ Max.
FSB50325: 1.8 Ω Max.
FSB50325A: 1.7 Ω Max.
FSB50825U: 0.45 Ω Max.
FSB50825A: 0.45 Ω Max.
FSB50250: 4.0 Ω Max.
FSB50250U: 4.2 Ω Max.
FSB50250A: 3.8 Ω Max.
FSB50450: 2.4 Ω Max.
FSB50450U: 2.4 Ω Max.
FSB50450A: 2.4 Ω Max.
FSB50550: 1.7 Ω Max.
FSB50550U: 1.4 Ω Max.
FSB50550A: 1.4 Ω Max.
FSB50660SF: 0.7 Ω Max.
600 V
FSB50760SF: 0.53 Ω Max.
Package
Transfer molded package without substrate
VS-Output
Out-Bonding,
except 50325TD
Out-Bonding
except TD-Version
Inner Bonding
Bootstrap Diode
Not included except 50325TD
Not included except D-Version
Included
UV Protection
Available
Available
Available
Thermal Sensing
Not available
Not available
Available
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
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AN-9080
3.
APPLICATION NOTE
Package
3.1. Internal Circuit Diagram
Table 3. Pin Descriptions
Major differences between Version 2 and previous
versions are red in the internal circuit diagram in Figure 2.
Though some old versions also have these features,
Version 2 widely adopts these features. Main differences
are Vts, internal connections between VS and sources of
high-side FRFETs, and internal bootstrap diodes. The Vts
pin is from V-phase HVIC only and sends out the
temperature sensing signal.
Pin # Name
1
2
3
(1) COM
(2) VB(U)
(17) P
(3) VCC(U)
VCC
VB
(4) IN (UH)
HIN
HO
(5) IN (UL)
LIN
VS
COM
LO
(8) VCC(V)
VCC
VB
(9) IN (VH)
HIN
HO
LIN
VS
COM
LO
(10) IN (VL)
(11) Vts
VCC
VB
HIN
HO
LIN
VS
COM
LO
(15) IN (WL)
IN(UH)
Input for U-phase high-side gate signal
5
IN(UL)
Input for U-phase low-side gate signal
6
NC
No connection
Bias voltage for V-phase high-side
MOSFET driving
Bias voltage for V-phase IC and low-side
VCC(V)
MOSFET driving
8
(20) N V
9
IN(VH)
Input for V-phase high-side gate signal
10
IN(VL)
Input for V-phase low-side gate signal
11
VTS
12
VB(W)
13
VCC(W)
14
IN(WH)
Input for W-phase high-side gate signal
15
IN(WL)
Input for W-phase low-side gate signal
16
NC
17
P
18
U, VS(U)
19
NU
Source of U-phase low-side MOSFET
20
NV
Source of V-phase low-side MOSFET
21
V, VS(V)
Output for V-phase and bias voltage
ground for high-side MOSFET driving
22
NW
Source of W-phase low-side MOSFET
23
W, VS(W)
Output for W-phase and bias voltage
ground for high-side MOSFET driving
(21) V, VS(V)
(22) N W
(23) W, V S(W)
(16) N.C
Figure 2. Internal Circuit Diagram of Motion SPM 5
Series Version 2 Products
3.2.
4
(19) N U
(12) V B(W)
(13) V CC(W)
Bias voltage for U-phase high-side
MOSFET driving
Bias voltage for U-phase IC and low-side
VCC(U)
MOSFET driving
VB(U)
7
Vts
(14) IN (WH)
IC common supply ground
(18) U, VS(U)
(6) N.C
(7) VB(V)
COM
Pin Description
Pin Description
Figure 3 shows the locations of pins and the names of
double-DIP package. Note that Vb pins have longer leads to
accommodate further creepage distance on the PCB. Figure
4 in the later section illustrates the internal layout of the
module in more detail.
VB(V)
Analog voltage output proportional to IC
temperature
Bias voltage for W-phase high-side
MOSFET driving
Bias voltage for W-phase IC and low-side
MOSFET driving
No connection
Positive DC-link input
Output for U-phase and bias voltage
ground for high-side FET driving
High-Side Bias Voltage Pins for Driving the HighSide MOSFET / High-Side Bias Voltage Ground
Pins for Driving the High-Side MOSFET
Pins: VB(U) – U,VS(U), VB(V) – V, VS(V), VB(W) – W, VS(W)



Figure 3. Pin Numbers and Names
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
These are drive power supply pins for providing gate
drive power to the high-side MOSFETs.
The advantage of the bootstrap scheme is that no
separate external power supplies are required to drive
the high-side MOSFETs.
Each bootstrap capacitor is generally charged from the
VCC supply during the on-state of the corresponding
low-side MOSFET.
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AN-9080

APPLICATION NOTE
To prevent malfunctions caused by noise and ripple in
supply voltage, a good quality filter capacitor with low
Equivalent Series Resistance (ESR) and Equivalent
Series Inductance (ESL) should be mounted very close
to these pins.
Positive DC-Link Pin
Pin: P


Low-Side Bias Voltage Pin / High-Side Bias
Voltage Pin
Pin: VCC(U), VCC(V), VCC(W)




These are control supply pins for the built-in ICs.
These three pins should be connected externally.
To prevent malfunctions caused by noise and ripple in
the supply voltage, a good quality filter capacitor with
low ESR and ESL should be mounted very close
between these pins and the COM pins.
Negative DC-Link Pins
Pins: NU, NV, NW

Low-Side Common Supply Ground Pin
Pin: COM



The common (COM) pin connects to the control ground
for the internal ICs.
Important! To prevent switching noises caused by
parasitic inductance from interfering with operations of
the module, the main power current should not flow
through this pin.



These are DC-link negative power supply pins (power
ground) of the inverter.
These pins are connected to the source of low-side
MOSFET in each phase.
Inverter Power Output Pin
Pins: U, V, W

Signal Input Pins
Pins: IN(UL), IN(VL), IN(WL), IN(UH), IN(VH), IN(WH)


This is a DC-link positive power supply pin of the
inverter.
This pin is internally connected to the drains of the
high-side MOSFETs.
To suppress the surge voltage caused by the DC-link
wiring or PCB pattern inductance, connect a smoothing
filter capacitor close to this pin and the negative DClink. Figure 35 shows more details. Typically metal
film capacitors are recommended.
Inverter output pins to be connected to the inverter load,
such as an electrical motor.
3.3. Package Structure
Figure 4 shows the internal package structure, including the
lead frame and bonding wires. This design has been revised
several times to further improve the manufacturability and
the reliability for customers.
These pins control the operation of the MOSFETs.
These pins are activated by voltage input signals. The
terminals are internally connected to the Schmitt
trigger circuit.
The signal logic of these pins is active HIGH; the
MOSFET turns ON when sufficient logic voltage is
applied to the associated input pin.
The wiring of each input needs to be short to protect the
module against noise influences.
An RC filter can be used to mitigate signal oscillations
or any noise that traces of input signals may pick up.
Analog Temperature Sensing Output Pin
Pin: Vts


This indicates the temperature of the V-phase HVIC
with analog voltage. HVIC itself creates some power
loss, but mainly heat generated from the MOSFETs
increases the temperature of the HVIC.
Vts versus temperature characteristics is illustrated in
Figure 16.
Figure 4. Package Structure
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
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5
AN-9080
APPLICATION NOTE
3.4. Packages
Figure 7. Double DIP 1 Package
Figure 5. DIP Package
Figure 6. SMD Package
Figure 8. Zigzag DIP Package
Notes:
1. For more detail regarding the package dimension and land pattern recommendation, please refer to each datasheet.
2.
Zigzag DIP package is only available for custom products.
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
www.fairchildsemi.com
6
AN-9080
APPLICATION NOTE
3.5. Marking Specifications
Figure 9. Marking of DIP Package
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
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7
AN-9080
APPLICATION NOTE
Figure 10. Marking of SMD Package
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
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AN-9080
APPLICATION NOTE
Figure 11. Marking of Double-DIP Package
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
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AN-9080
APPLICATION NOTE
Figure 12. Marking of Zigzag DIP Package
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
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AN-9080
4.
APPLICATION NOTE
Integrated Functions and Protection Circuit
control supply and the input signal during power supply
startup or shutdown. In addition, pull-down resistors are
built into each input circuit. Therefore, external pull-down
resistors are not typically needed and the number of external
components is smaller as a result. The input noise filter
inside the HVIC suppresses short pulse noise and prevents
the MOSFET from malfunction and excessive switching
loss. Furthermore, by lowering the turn-on and turn-off
threshold voltages of the input signal, as shown in Table 5, a
direct connection to 3.3 V-class MCU or DSP is possible.
4.1. Internal Structure of HVIC
HVIC of Motion SPM® 5 Series Version 2 Products
Input
Noise
Filter
HIN
Level-Shift
Circuit
Common Mode
Noise Canceller
Gate Driver w/
Gate Resistors
HO
Gate Driver w/
Gate Resistors
LO
500k(typ)
Input
Noise
Filter
LIN
500k(typ)
Matching
Delay
90ns(typ)
Table 5. Input Threshold Voltage Ratings
(at VCC=15 V, TJ=25°C)
Figure 13. Internal Block Diagram of HVIC
Figure 13 shows the block diagram of the internal structure
of the HVIC inside Motion SPM 5 Series V2 products. Gate
signal input pins have internal 500 kΩ (typical) pull-down
resistors. The weak pull-down reduces standby power
consumption. If there is any concern for malfunction due to
noise associated with layout, additional pull-down resistors
of 4.7 kΩ, for example, are recommended close to the
module input pins. RC filters can be used instead of pulldowns to reduce noise and narrow pulses as well. Keep in
mind that this filter introduces some distortion of PWM
volt-second because the ON/OFF threshold levels are not
symmetrical within the supplied voltage.
Figure 14 shows an example of PWM input interface circuit
from the microcontroller (MCU) to Motion SPM 5 Series
products. The input logic is active HIGH and, because there
are built-in pull-down resistors of 500 kΩ, external pulldown resistors are not typically needed.
IN(UL), IN(VL), IN(WL)
SPM
CF
COM
The maximum rating voltages of the input pins are shown in
Table 4. The RC coupling at each input shown dotted in
Figure 14 may change depending on the PWM control
scheme used in the application and the wiring impedance of
the application PCB layout.
Table 4. Maximum Ratings of Input Pins
Condition
Rating (V)
Control Supply
Voltage
VCC
Applied between
VCC – COM
20
Input Signal
Voltage
VIN
Applied between
IN(xH) – COM,
-0.3 ~ VCC + 0.3
IN(xL) – COM
VIH
2.9 V
Off Threshold
Voltage
VIL
IN(UH), IN(VH),
IN(WH) – COM
IN(UL), IN(VL),
IN(WL) - COM
0.8 V
It is very important that all control circuits and power
supplies should be referred to COM terminal of the module
and not to the N power terminal. In general, it is best
practice to make the common reference (COM) a ground
plane in the PCB layout. The main control power supply is
also connected to the bootstrap circuits that are used to
establish the floating supplies for the high-side gate drives.
When control supply voltage (VCC and VBS) falls below
Under-Voltage Lockout (UVLO) level, HVIC turns off the
MOSFETs while disregarding gate control input signals.
Motion SPM 5 Series products employ active-HIGH input
logic. This removes the sequence restriction between the
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
On Threshold
Voltage
High-frequency noise on the supply might cause the internal
control IC to malfunction and generate erroneous signals.
To avoid these problems, the maximum ripple on the supply
should be less than ±1 V/µs. In addition, it may be
necessary to connect a 20 V/1 W Zener diode (for example,
1N4747A) across the control supply to prevent surge
destruction under severe conditions.
Figure 14. Recommended MCU I/O Interface Circuit
Symbol
Min. Max.
Control and gate drive power for SPM 5 Series V2 products
is normally provided by a single 15 V DC supply connected
to the module VCC and COM terminals. For proper
operation, this voltage should be regulated to 15 V 10%
and its current supply should be larger than 260 µA for SPM
product, excluding other circuitry. Table 6 describes the
behavior of the SPM parts for various control supply
voltages. The control supply should be well filtered with a
low impedance electrolytic capacitor and a high-frequency
decoupling capacitor connected right at the pins.
RF
Item
Condition
4.3. Functions vs. Control Supply Voltage
IN(UH), IN(VH), IN(WH)
RPD
Symbol
As shown in Figure 13, the input signal integrates a 500 kΩ
(typical) pull-down resistor. Therefore, when using an
external filtering resistor between the MCU output and the
Motion SPM® input, attention should be paid to the signal
voltage drop at the input terminals to satisfy the turn-on
threshold voltage requirement. For instance, R=100 Ω and
C=1 nF can be used for the parts shown dotted in Figure 14.
4.2. Circuit of Input Signal (VIN(H), VIN(L))
MCU
Item
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AN-9080
APPLICATION NOTE
Table 6. Control Voltage Range vs. Operations
Control Voltage
Range [V]
Function Operations
0~4
Control IC does not operate. UVLO and
fault output do not operate. dv/dt noise
on the main P-N supply might trigger
the MOSFETs.
4 ~ 10
Control IC starts to operate. As the
UVLO is set, gates of MOSFETs are
pulled down regardless of control input
signals.
10 ~ 13.5
4.4. Under-Voltage Lockout (UVLO)
The half-bridge HVIC has under-voltage lockout function to
protect MOSFETs from operation with insufficient gate
driving voltage. A timing chart for this protection is shown
in Figure 15.
Input Signal
UV Protection
Status
Over 20
SET
RESET
a6
a5
a1
High-side Supply,
Vbs
UVBSD
a2
UVLO is cleared. MOSFETs operate in
accordance with the control gate input.
Because driving voltage is below the
recommended range, RDS(on) and the
switching loss is higher than under
normal conditions.
a3
a4
MOSFET Current
[High Side]
Input Signal
13.5 ~ 16.5 for VCC Normal operation. This is the
13.5 ~ 16.5 for VBS recommended operating condition.
16.5 ~ 20 for VCC
16.5 ~ 20 for VBS
RESET
UVBSR
UV Protection
Status
RESET
SET
RESET
b6
UVCCR
MOSFETs still operate. Because
driving voltage is above the
recommended range, MOSFETs switch
faster and system noise may increase.
The peak of short-circuit current may
increase as well.
Low-side Supply,
Vcc
b5
b1
UVCCD
b2
b3
b4
MOSFET Current
[Low Side]
Figure 15. Timing Chart of Under-Voltage Protection
Control circuit in the module might be
damaged.
a1: Control supply voltage rises: After the voltage reaches
UVBSR, the circuit starts to operate when next input
comes in.
a2: Normal operation: MOSFET turns on and carries current.
a3: Under-voltage detection (UVBSD).
a4: MOSFET turns off regardless of control input condition,
but there is no fault output signal because the SPM 5
series does not have an FO pin.
a5: Under-voltage lockout cleared (UVBSR).
a6: Normal operation: MOSFET turns on and carries current.
b1: Control supply voltage rises: After the voltage rises
UVCCR, the circuit starts to operate immediately.
b2: Normal operation: MOSFET turns on and carries current.
b3: Under-voltage detection (UVCCD).
b4: MOSFET turns off regardless of control input condition,
but there is no fault output signal because SPM 5 series
does not have FO pin.
b5: Under-voltage lockout cleared (UVCCR).
b6: Normal operation: MOSFET turns on and carries current.
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
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AN-9080
5.
APPLICATION NOTE
New Parameter Design Guidance
As temperature decreases further below 0ºC, Vts decreases
linearly until it reaches zero volts. If the temperature of
HVIC increases above 150ºC, which is above the maximum
operating temperature, Vts increases (theoretically) up to
5.2 V until it gets clamped by the internal Zener diode.
5.1. Thermal Sensing Unit (TSU)
The junction temperature of power devices should not
exceed the maximum junction temperature. Even though
there is some margin between the Tjmax specified on the
datasheet and the Tjmax at which power devices are
destroyed, attention should be paid to ensure the junction
temperature stays well below the Tjmax. One of the
inconveniences in using previous versions of SPM 5 Series
products was lack of temperature monitoring or protection
feature inside the module. An NTC had to be mounted on
the heat sink or very close to the module if over-temperature
protection was required in the application.
Figure 17 shows the equivalent circuit diagram of TSU
inside the IC and a typical application diagram. This output
voltage is clamped to 5.2 V by an internal Zener diode, but
if the maximum input range of analog-to-digital converter of
MCU is below 5.2 V, an external Zener diode should be
inserted between an A/D input pin and the analog ground
pin of MCU. An amplifier can be used to change the range
of voltage input to the analog-to-digital converter to have
better resolution of the temperature. It is recommended to
add a ceramic capacitor of 1000 pF between VTS and COM
(ground) to make the Vts more stable. If VCC is not supplied
for any reason, Vts is longer available.
Thermal Sensing Unit (TSU) uses the technology based on
the temperature dependency of transistor Vbe; Vbe decreases
2 mV as temperature increases 1ºC.
The TSU analog voltage output reflects the temperature of
the HVIC in Motion SPM 5 Series products. The
relationship between Vts output and HVIC temperature is
shown in Figure 16. It does not have any self-protection
function and, therefore, it should be used appropriately
based on application requirement. Note that there is a time
lag from MOSFET temperature to HVIC temperature. It is
very difficult to respond quickly when temperature rises
sharply in a transient condition, such as load step changes.
Even though TSU has limitations, it is definitely useful in
enhancing the system reliability.
VCC
SPM 5 Series
Vdd
VCC
MCU
Temperature
Sensing
Voltage
2.5Kohm
2.5Kohm
VTS
A/D
100Kohm
5.2V
COM
COM
Figure 17. Internal Block Diagram, TSU Interface Circuit
Figure 18 shows the sourcing capability of VTS pin at 25 ºC
and the test method. VTS voltage decreases as the sourcing
current increases. Therefore, the load connected to VTS pin
should be minimized to maintain the accurate voltage output
level without degradation.
Test Methods
Figure 16. Temperature vs. Vts
The relationship between Vts and V-phase HVIC
temperature can be expressed as the following equation:
VTS [V] = 0.0192*THVIC [ºC] + 0.31 ±0.19
(1)
The maximum variation of Vts due to process variation is
±0.19 V, which is equivalent ±10ºC. This amount is
constant, regardless of the temperature because the slopes of
three lines in Figure 16 are identical. If the ambient
temperature information is available, for example, through
NTC in the system, Vts can be measured to adjust the offset
before the motor starts to operate.
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
Test Result
Figure 18. Load Variation of Vts
www.fairchildsemi.com
13
AN-9080
APPLICATION NOTE
Figure 19 shows that the V-phase HVIC temperature
inferred from VTS follows closely the case temperature, TC,
with some lag. The amount of loss in a single MOSFET in a
given operating condition can be calculated by Fairchild’s
online loss and temperature simulation tool, available at:
http://www.fairchildsemi.com/support/design-tools/motioncontrol-design-tool/. By using the loss from this simulation
and the thermal resistance value on the datasheet, together
with TSU, the junction temperature can be estimated and
controlled to stay below the target junction temperature.
Conditions: VDC=300V, VCC=15V, FSW=16.6kHz, Fan Motor Load
150
TC
140
VTS
Set Thermal Shutdown
3.2
5V
3.0
Reset Thermal Shutdown
VO
2.8
130
VTS
2.6
o
Hysteresis : 38.6 C
2.4
120
2.2
110
TC : 138.1 C
100
VTS : 2.728 V (136 C)
o
o
2.0
o
TC : 99.5 C
90
1.8
o
VTS : 2.044 V (101 C)
80
1.6
70
1.4
60
1.2
50
1.0
40
0.8
30
0.6
20
0.4
VOLTAGE, VTS [V]
o
CASE TEMPERATURE, TC [ C]
160
There are four variables with two equations and, therefore,
set both variables as desired. Ru, the pull-up resistor for VO,
can be chosen to be 10 kΩ. R2 can be 1 kΩ, considering
VREF is below one half of the supply voltage, which is 5 V in
this example, and R1 needs to be bigger than R2. A
Microsoft® Excel® Solver can be used to get the answer of
R1=1364 Ω and Rf= 3952 Ω. Close standard resistor values
would be 1.37 kΩ and 3.92 kΩ. These two resistor values
result in VTS_off of 2.225 V, which is 99.7°C and VTS_on of
1.839 V, which is 79.6°C.
2.230V
(=100℃)
0V
Figure 21. Comparator Output with Hysteresis
Using TSU
0.2
10
0
0
10
20
30
40
50
60
70
80
90
0.0
100
5.2. Bootstrap Circuit Design
TIME [min]
Operation of Bootstrap Circuit
The VBS voltage, which is the voltage difference between
VB (U, V, W) and VS (U, V, W), provides the supply to the
HVIC within Motion SPM 5 Series V2 products. This
supply must be in the range of 13.5 V~16.5 V to ensure that
the HVIC can fully drive the high-side MOSFET. The
SPM5 V2 products include under-voltage lockout protection
for VBS to ensure that the HVIC does not drive the high-side
MOSFET if the VBS voltage drops below the specific
voltage shown on the datasheet. This function prevents the
MOSFET from operating in a high-dissipation mode.
Figure 19. OTP Test in Real Application
Figure 20 is an example of over-temperature protection
circuit using the Vts signal. A comparator with hysteresis is
used to create a low active OT signal that can be read by a
microprocessor. Based on this signal, the microprocessor
can disable or enable PWM output. Calculate the resistor
values to make the upper threshold level 100ºC and the
lower threshold level 80ºC so that the comparator output
voltage VO matches the waveform in Figure 21.
5V
MCU
Rf
R1
Vref
I/O Port
Comparator
VTS
Vo
C14
104
The VBS floating supply can be generated in a number of
ways, including the bootstrap method shown in Figure 22.
This method is simple and inexpensive; however, the duty
cycle and on-time are limited by the need to refresh the
charge in the bootstrap capacitor. The bootstrap supply is
formed by a combination of bootstrap diode, resistor, and
capacitor, as shown in Figure 22.
SPM 5 Series
V2 Product
Ru
R2
C16
104
Hysteresis voltage: ΔVTS=0.384V (THVIC=20℃)
1.846V
(=80℃)
C17
102
Figure 20. Example of OTP Using TSU
VBS
When the temperature is below 80ºC; VO, the open-collector
output of the comparator, should stay HIGH. To make VO
transition to LOW at 100ºC, VREF needs to go below
2.230 V, which is VTS voltage at 100ºC.
CBS
VCC
VCC(H)
IN(H)
(2)
CVCC
When the temperature is above 100ºC, VO should stay LOW.
To make VO transition to HIGH at 80ºC, VREF needs to be
higher than 1.846 V, which is VTS voltage at 80ºC.
IN(L)
COM
(3)
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
VB
DBS (Integrated RBS)
Motion SPM®
VB
VCC
HO
IN(H)
HVIC
VS
VDC
IN(L)
LO
COM
Figure 22. Bootstrap Circuit for the Supply Voltage (VBS)
of HVIC
www.fairchildsemi.com
14
AN-9080
APPLICATION NOTE
The current flow path of the bootstrap circuit is show in
Figure 23. When VS is pulled down to ground (either
through the low-side power device or the load), the
bootstrap capacitor, CBS, is charged through the bootstrap
diode (DBS) and the resistor from the VCC supply. The
bootstrap resistor is not included in Figure 23 because the
bootstrap diode in SPM 5 Series version 2 products has
resistive characteristics.
The characteristics of the built-in bootstrap diode in the
SPM5 V2 products are:
 Fast recovery diode: 600 V / 0.5 A
 Typical trr: 80 ns
 Resistive characteristic: equivalent resistor: ~15 Ω
Table 7 shows the forward-voltage drop and reverserecovery characteristics of the bootstrap diode.
VBS
Table 7. Bootstrap Diode Specifications
CBS
VCC
VB
DBS (Include RBS)
ichg
VCC(H)
OFF
IN(H)
ON
IN(L)
COM
Symbol
Motion SPM®
VB
VCC
HO
IN(H)
HVIC
VS
Parameter
Condition
Typ.
VF
Forward-Drop Voltage
trr
Reverse-Recovery Time IF=0.1 A, TC=25°C 80 ns
IF=0.1 A, TC=25°C 2.5 V
Table 8. Bootstrap Diode Absolute Max. Ratings
VDC
Symbol
IN(L)
VRRMB
LO
COM
IFB
(3)
IFPB(3)
Parameter
Condition
Maximum Repetitive
Reverse Voltage
Forward Current
TC=25°C
Forward Current
TC=25°C, Under
(Peak)
1 ms Pulse Width
Rating
600 V
0.5 A
1.5 A
Note:
3. Calculated values or design parameters.
Figure 23. Bootstrap Circuit Charging Path
Built-in Bootstrap Diode
When the high-side MOSFET or body diode conducts, the
bootstrap diode (DBS) supports the entire bus voltage, so a
diode with withstand voltage of more than 500 V is
required. It is important that this diode has a recovery time
of less than 100 ns characteristic to minimize the amount of
charge fed back from the bootstrap capacitor into the VCC
supply. The bootstrap resistor is necessary to slow down the
dVBS/dt and limit initial charging current (Icharge) of the
bootstrap capacitor.
Initial Charging of Bootstrap Capacitor
Adequate on-time of the low-side MOSFET to fully charge
the bootstrap capacitor is required before normal operation
of PWM starts. Figure 25 shows an example of initial
bootstrap charging sequence. Once VCC establishes, VBS
must be charged by turning on low-side MOSFETs. PWM
signals are typically generated by an interrupt triggered by a
timer with a fixed interval based on the switching carrier
frequency. Therefore, it is desired to maintain this structure
without creating complementary high-side PWM signals.
Figure 24 shows the built-in bootstrap diodes of SPM5 V2
products’ special VF characteristics to be used without
additional bootstrap resistors. Therefore, only external
bootstrap capacitors are needed to make a bootstrap circuit.
The capacitance of VCC should be sufficient to supply
necessary charge to VBS capacitance of all three phases. If
normal PWM operations start before VBS reaches the undervoltage lockout reset level, high-side MOSFETs do not
switch accordingly without creating any fault signal. This
may lead to a failure of motor start in some applications.
VPN
0V
VCC
0V
VBS
0V
ON
VIN(L)
0V
Figure 24. V-I Characteristics of Bootstrap Diode in
SPM5 V2 Products
Section of charge pumping for VBS
: Switching or Full Turn on
Start PWM
VIN(H)
OFF
0V
Figure 25. Timing Chart of Initial Bootstrap Charging
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
www.fairchildsemi.com
15
AN-9080
APPLICATION NOTE
Selection of Bootstrap Capacitor
The bootstrap capacitance can be calculated by:
If three phases are charged synchronously, initial charging
current through a single shunt resistor may exceed the overcurrent protection level. In that case, a sequential charging
among three phases is more appropriate.
CBS 
The initial charging time (tcharge) can be calculated from the
following equation:
t charge  CBS  (RBS  RDS _ ON ) 
VCC
1
 ln(
)

VCC  VBS (min)  VF  VLS
ILeak  t
VBS
(5)
where:
Δt:
maximum on pulse width of high-side MOSFET;
ΔVBS: allowable discharge voltage (voltage ripple) of the
CBS; and
ILeak: maximum discharge current of the CBS, including:
 Gate charge for turning the HS MOSFET on
 Quiescent current to the HS circuit in the HVIC
 Level-shift charge required by level-shifters in
HVIC
 Leakage current in the bootstrap diode
 CBS capacitor leakage current (can be ignored for
non-electrolytic capacitors)
 Bootstrap diode reverse-recovery charge.
Practically, 1 mA of ILeak is recommended for Motion
SPM®5 Series V2 products. By considering dispersion and
reliability, the capacitance is generally selected to be twice
the calculated one. The CBS is only charged when the highside MOSFET is off and the VS voltage is pulled down to
ground. Therefore, the on-time of the low-side MOSFET
must be sufficient to ensure that the charge drawn from the
CBS capacitor can be fully replenished. Hence, there is an
inherent minimum on-time for the low-side MOSFET (or
off-time of the high-side MOSFET).
(4)
where:
VF:
forward-voltage drop across the bootstrap diode;
VBS(min): minimum value of the bootstrap capacitor;
VLS:
voltage drop across the low-side MOSFET or
load; and
δ:
duty ratio of PWM (0 – 1).
VF is actually not a constant and varies depending on the
amount of bootstrap charging current. VLS changes by the
magnitude and direction of the phase output current in
normal operation. RDS_ON drop by bootstrap charging current
must be considered because phase output current can be
assumed to zero at initial charging. VLS can be regarded as
zero and RDS_ON needs to be part of RC time constant. In
that case, VF needs to set as approximately 1 V, which is the
value of a non-resistive diode, and RBS needs to be 15 Ω.
Figure 26 and Figure 27 show real waveforms of the initial
bootstrap capacitor charging. Figure 26 is with 1 µF
capacitor and Figure 27 is with 47 µF capacitor to
demonstrate two extreme cases. In Figure 26, bootstrap
voltage charges to 13 V in 25 µs, but in Figure 27 it takes
several ms at 50% duty. The initial peak current values are
about 1 A, which can be expected from Figure 24.
Bootstrap Capacitance Calculation Examples
Examples of bootstrap capacitance calculation:
ILeak = 1.0 mA (recommended value)
ΔVBS = 0.1 V (recommended value)
Δt = Maximum on pulse width of high-side MOSFET =
0.2 ms. (depends on user system)
CBS _ min 
ILeak  t 1mA  0.2ms

 2.0  10  6
VBS
0.1V
(6)
→ More than two times → 4.7 µF.
Note:
4. This capacitance value can be changed according to the
switching frequency, the type of capacitor used, and
recommended VBS voltage of 13.5~16.5 V (from
datasheet). The above result is a calculation example
and should be changed according to the actual control
method and lifetime of component.
Figure 26. Waveform of Initial Bootstrap Charging
(Conditions: VDC=300 V, VCC=15 V, CBS=1 μF, LS MOSFET
Turn-on Time=25 μs)
Figure 28 shows bootstrap capacitance value versus switching
frequency with maximum discharge current of 2 mA.
Figure 27. Waveform of Initial Bootstrap Charging
(Conditions: VDC=300 V, VCC=15 V, CBS=47 μF, LS
MOSFET Turn-on Time=100 μs)
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
www.fairchildsemi.com
16
AN-9080
APPLICATION NOTE
Figure 31. ton_pw and toff_pw vs. ID and TJ of FSB50450A
It is not included in this graph; but as VCC increases, ton_pw
decreases and toff_pw increases.
5.4. Short-Circuit SOA
SPM 5 Series products have MOSFETs and endure longer
than IGBT-based modules when short-circuit situations
occur. Figure 32 is the test circuit used to measure shortcircuit withstanding time and the definitions of the terms
used in the measurement. The low-side MOSFET is shorted
with a wire and the high-side device is turned on.
Figure 28. Capacitance of Bootstrap Capacitor on
Variation of Switching Frequency
5.3. Minimum Pulse Width
As shown in Figure 29, there are input noise filters of 90 ns
time constant inside the HVIC. It screens out pulses
narrower than the filter time constant. Additional
propagation delay in level-shifters and other circuits,
together with gate charging time, prevent SPM 5 products
from responding to an input pulse narrower than ~120 ns.
HVIC of Motion SPM® 5 Series Version 2 Products
Input
Noise
Filter
HIN
Level-Shift
Circuit
Common Mode
Noise Canceller
Gate Driver w/
Gate Resistors
HO
Gate Driver w/
Gate Resistors
LO
500k(typ)
Input
Noise
Filter
LIN
500k(typ)
Matching
Delay
Figure 32. Short Circuit Withstanding Time Test
90ns(typ)
Figure 33 is a waveform of FSB50550A at a short-circuit
condition of VDC=400 V, VCC=VBS=20 V, TJ=150°C. Even
in this type of extreme condition, FSB50550A demonstrates
its ability to endure short-circuit conditions several times
longer than IGBT modules.
Figure 29. Internal Structure of Signal Input Pins
Figure 30 shows definitions of ton_pw and toff_pw illustrated in
Figure 31. ton_pw is the minimum pulse width of PWM ON
signal required to make VDS decrease to zero, as shown on
the left side of Figure 30. toff_pw is the minimum pulse width
of PWM OFF signal required to make ID decrease to zero.
Figure 30. Definition of ton_pw and toff_pw
Figure 31 shows variations of ton_pw and toff_pw as the ID and
TJ of FSB50450A changes. As ID increases, ton_pw increases,
but toff_pw does not change much. As TJ increases, ton_pw
decreases, but toff_pw does not vary much.
Figure 33. SCWT of FSB50550A at Worst Condition
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
www.fairchildsemi.com
17
AN-9080
6.
APPLICATION NOTE
Application Example
C1
(1 ) COM
(2 ) VB(U)
(3 ) VCC(U)
(4 ) IN(UH)
R5
Note1
C5
C2
Note2
(5 ) IN(UL)
(6 ) N.C
Microprocessor
VCC
VB
HIN
HO
LIN
VS
COM
LO
(18) U , VS(U)
C3
Note4
(9 ) IN(VH)
(10) IN(VL)
C2
Note3
(11) VTS
(12) VB(W)
(13) VCC(W)
(14) IN(WH)
(15) IN(WL)
C2
VDC
(19) NU
(7 ) VB(V)
(8 ) VCC(V)
Note5
(17) P
VCC
VB
HIN
HO
LIN
VS
COM
LO
(20) NV
(21) V , VS(V)
Motor
VTS
Note5
VCC
VB
HIN
HO
LIN
VS
COM
LO
(22) NW
(23) W , VS(W)
(16) N.C
For temperature sensing
For current sensing and protection
R4
Note6
R3
Note3
Note8
C4
15V Supply
Note5
Note7
Figure 34. Example of Application Circuit
Notes:
1. Gate signal inputs are active-HIGH with 500 kΩ internal
pull-down resistors. However, an additional 4.7 kΩ pulldown resistor is recommended for each gate signal
input to prevent malfunction induced by switching noise.
2.
Shorter traces are desirable between the
microprocessor and the power module. If necessary, RC
filters can be employed on gate signals to suppress
noise coupled from power traces and remove very
narrow pulses. RC values should be selected for input
signals to be compatible with the turn-on and turn-off
threshold voltages. Keep in mind that this RC filter may
alter the timing of PWM and the resulting volt-second.
3.
Each HVIC needs to have a 1 µF cermaic capacitor
close to VCC pin and possibly to the COM pin to supply
instantaneous power. An electrolytic capacitor of 10 µF
is required to supply stable VCC voltage to the module. A
Zener diode can be used in parallel to ensure VCC does
not increase beyond a certain voltage at surge events.
4.
A high-frequency non-inductive capacitor, C3, of around
0.1~0.22 µF/600 V should be placed very close to the
module and between P and the ground side of the shunt
resistor, R3.
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
5.
PCB traces for the main power paths between DC bus
capacitors and the module should be as short as
possible to minimize the noise associated with the
parasitic inductance. These traces are colored in blue.
6.
The current feedback trace should be connected directly
from the shunt resistor (Kelvin connection) to get a
clean and undistorted signal.
7.
The power ground and the signal ground need to be
connected at a single point to prevent switching noise
on the power side from interfering with control signals.
8.
Relays are commonly used in all home appliances
electrical equipment and should be kept a sufficient
distance from the microprocessor to avoid
electromagnetic interference.
www.fairchildsemi.com
18
AN-9080
APPLICATION NOTE
If the snubber capacitor is installed in location A in Figure
35, it cannot suppress the surge voltage effectively due to
parasitic impedance of the traces between the capacitor and
the module. If the capacitor is installed in location B, surge
suppression is more effective because the snubber capacitor
is connected right at the module power pins. However, in
case a single shunt resistor is used for phase current
reconstruction or over-current protection, the voltage across
the shunt resistor cannot correctly reflect the DC bus current
information consumed by the module and, therefore, the
current feedback signal is distorted. The C position is a
reasonable compromise with better suppression than
location A, without impacting the current sensing signal
accuracy. For this reason, location C is generally used.
6.1. Recommended Wiring of Shunt Resistor
External current-sensing resistors are applied to detect phase
current. A longer pattern between the shunt resistor and
SPM pins cause large surge voltages that might damage
built-in ICs and distort the sensing signals. To decrease the
pattern inductance, the wiring between the shunt resistor and
SPM pins should be as short as possible. Parasitic
impedance between the shunt resistor and the power module
pins should be less than 10 nH, which results from a trace in
3 mm width, 20 mm length, and 1 oz thickness.
6.2. Snubber Capacitor
As shown in Figure 35, snubber capacitors should be
carefully located to suppress surge voltages effectively. A
0.1~0.22 µF snubber capacitor is generally a recommended.
Incorrect position of
Snubber Capacitor
6.3. PCB Layout Guidance
Figure 36 shows an example of PCB layout for a fan
application. This “donut” shape of the board facilitates the
inclusion of the board within the motor frame. The compact
size of Motion SPM 5 Series is the key to overcome the
mechanical challenge in this type of design. More detailed
guidelines can be found in Fairchild reference designs
RD-FSB50450A and RD-FSB50760SF.
Correct position of
Snubber Capacitor
P
A
Capacitor
Bank
B
SPM
C
Wiring Leakage
Inductance
Nu,Nv,Nw
Please make the connection
point as close as possible to
the terminal of shunt resistor
COM
Shunt
Resistor
Wiring inductance should be less than 10nH.
width > 3mm, length < 20mm
Figure 35. Recommended Wiring of Shunt Resistor and
Snubber Capacitor
Figure 36. PCB Layout Example
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
www.fairchildsemi.com
19
AN-9080
APPLICATION NOTE
Because Motion SPM 5 Series does not have screw holes,
flatness of the top surface is not specified on the datasheet.
But because of its compact size, warpage is below several
tens of µm. Special methods are required to install a heat
sink, as shown in Figure 39.
6.4. Heat Sink Mounting
Recommended Cooling Method
Motion SPM 5 Series does not have screw holes for
mounting a heat sink on top of the module because it is a
very compact device aiming for small power applications.
However, if it is desired to extend the power capability of
the module by attaching a heat sink, this section introduces
several methods. Temperature rise of power semiconductors
is coming from the non-ideal aspects of switching devices;
such as IGBT, MOSFET, and diode. When the switching
device turns on, the forward-voltage drop results in
conduction loss and the finite rise and fall time of current
and voltage during the switching period create switching
loss. These power losses make the junction temperature, as
well as the case temperature, rise and the thermal resistance
of each package plays an important role, as shown in the
formula:
TJ-TC = (Power loss) x
(Thermal Resistance between Junction-to-Case)
Adhesive material with high thermal conductivity, such as
Loctite® 384, can be used to fix the heat sink on the top
surface, as shown in Figure 39(a).
Another way to mount a heat sink is to use screws
throughout the PCB and the heat sink as shown in Figure
39(b). SPM 5 products should be soldered first. Excessive
torque may bend the PCB.
Fairchild has developed a special metal strip that fits in the
slit on the bottom side of SPM5 package, as shown in
Figure 39(c). The heat sink can be mounted on the module
first before the soldering process.
A heat sink with leads can be used, as shown in Figure
39(d). Keep good contact between the top surface of the
module and the heat sink during the soldering process.
(7)
Using the chassis for heat-sink, as shown in Figure 39(e),
can be an effective solution for built-in applications. But it
is difficult to maintain mechanical accuracy in assembly and
flexible thermal interface material is often used to fill the
gap between module and the chassis.
Therefore, to decrease the case temperature and increase the
SOA area, total thermal resistance and power losses must be
minimized. Heat-sink, one of the most popular cooling
methods of power devices, decreases the thermal resistance
between the package case and the ambient. A heat-sink can
improve the thermal performance by spreading the heat to
the ambient more effectively. Anything with comparably
high thermal conductivity can be used as a heat-sink. For
example, even a PCB pattern can be a heat-sink if it has
enough cooling areas. DIP without stand-offs and SMD
products can benefit from this cooling area contacting the
bottom-side of the module on the PCB. Thicker and wider
patterns of power pins are useful in a similar fashion. Figure
37 shows a typical test board for Motion SPM 5 Series
without cooling area. Figure 38 shows a test board with
cooling area on the PCB surfacing the bottom side of the
module and with wider traces for power pins.
Figure 37. Test Board without Cooling Area
Figure 38. Test Board with Cooling Area of Copper Plane
Under the Module and Thick Power Pins
Figure 39. Heat Sink Installation Methods
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
www.fairchildsemi.com
20
AN-9080
APPLICATION NOTE
Silicon Thermal Compound
Silicone thermal compound, also called thermal grease,
should be applied between the heat sink and the flat surface
of the SPM 5 Series to fill microscopic air gaps due to
imperfect flatness that ultimately reduce the contact thermal
resistance. Thermal conductivity of thermal compound is
about 0.5 – 10 W/(mK) and far greater than that of air
(0.024), but far smaller than that of metal (Aluminum 220,
Copper 390). It should not be used too much; a uniform
layer of 100 ~ 200 µm thickness is desired.
Figure 41 shows the test bench setup and the case
temperature comparison result. FSB50450A shows
outstanding thermal performance compared to its
competition in the same operating conditions.
6.5. System Performance
A fan motor for an air-conditioner indoor unit has been
tested to provide comparison data between Motion SPM 5
Series V2 and competitive products.
Figure 40 illustrates the power loss of single power device,
such as MOSFET or IGBT. FSB50450A (Motion SPM 5
Series V2 – 500 V / 1.5 A) shows the lowest conduction
loss and switching loss compared to competitive products in
the same operating conditions. This lowest power loss with
Motion SPM 5 Series V2 means better energy efficiency in
the system.
Figure 41. Case Temperature Comparison of SPM 5
Series V2 and Competition (Test Conditions: VDC=300 V,
VCC=15 V, fSW=16.6 kHz, ID=0.3 Arms, TA=25°C, SVPWM,
Dead Time=2.6 μs, 124 W Fan Motor with Blade for Air
Conditioner)
Figure 40. Power Loss Comparison
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
www.fairchildsemi.com
21
AN-9080
8.
APPLICATION NOTE
Handling Guide and Packing Information
8.1. Handling Precautions
When using semiconductors, the incidence of thermal
and/or mechanical stress to the devices due to improper
handling may result in significant deterioration of their
electrical characteristics and/or reliability.
Transportation
Handle the device and packaging material with care. To
avoid damage to the device, do not toss or drop. During
transport, ensure that the device is not subjected to
mechanical vibration or shock. Avoid getting devices wet.
Moisture can adversely affect the packaging (by nullifying
the effect of the antistatic agent). Place the devices in
special conductive trays. When handling devices, hold the
package and avoid touching the leads, especially the gate
terminal. Put package boxes in the correct direction. Putting
them upside down, leaning them, or giving them uneven
stress can cause the electrode terminals to be deformed or
the resin case to be damaged. Throwing or dropping the
packaging boxes can cause the devices to be damaged.
Wetting the packaging boxes might cause the breakdown of
devices when operating. Pay attention not to wet them when
transporting on a rainy or snowy day.
Storage
1. Avoid locations where devices might be exposed to
moisture or direct sunlight. (Be especially careful
during periods of rain or snow.)
2.
Do not place the device cartons upside down. Stack the
cartons on top of one another in an uprighrt position
only. Do not place cartons on their sides.
3.
The storage area temperature should be maintained
within a range of 5°C to 35°C, with humidity kept
within the range from 40% to 75%.
4.
Do not store devices in the presence of harmful
(especially corrosive) gases or in dusty conditions.
5.
Use storage areas with minimal temperature fluctuation.
Rapid temperature changes can cause moisture
condensation, resulting in lead oxidation or corrosion,
which degrades lead solderability.
6.
When repacking devices, use antistatic containers.
Unused devices should be stored less than one month.
7.
Do not allow external forces or loads to be applied to
the devices while they are in storage.
4.
Place a conductive mat over the floor of the work area
or take other appropriate measures, so that the floor
surface is grounded to earth and is protected against
electrostatic electricity.
5.
Cover the workbench surface with a conductive mat,
grounded to earth, to disperse electrostatic electricity on
the surface through resistive components. Workbench
surfaces must not be constructed of low-resistance
metallic material that allows rapid static discharge
when a charged device touches it directly.
6.
Ensure that work chairs are protected with an antistatic
textile cover and are grounded to the floor surface with
a grounding chain.
7.
Install antistatic mats on storage shelf surfaces.
8.
For transport and temporary storage of devices, use
containers that are made of antistatic materials or
materials that dissipate static electricity.
9.
Make sure cart surfaces that come into contact with
device packaging are made of materials that conduct
static electricity and are grounded to the floor surface
with a grounding chain.
11. Operators must wear a wrist strap grounded to earth
through a resistor of about 1 MΩ.
12. If tweezers are likely to touch the device terminals, use
an antistatic type and avoid metallic tweezers. If a
charged device touches such a low-resistance tool, a
rapid discharge can occur. When using vacuum
tweezers, attach a conductive chucking pad at the tip
and connect it to a dedicated ground used expressly for
antistatic purposes.
13. When storing device-mounted circuit boards, use a
board container or bag protected against static charge.
Keep them separated from each other and do not stack
them directly on top of one another to prevent static
charge / discharge due to friction.
14. Ensure that articles (such as clip boards) that are
brought into static electricity control areas are
constructed of antistatic materials as much as possible.
15. In cases where the human body comes into direct
contact with a device, be sure finger cots or gloves
protected against static electricity are worn at all times.
Electrical Shock
A device undergoing electrical measurement poses the
danger of electrical shock. Do not touch the device unless
sure that the power to the measuring instrument is off.
Be aware of the risk of moisture absorption by the
products after unpacking moisture-proof packaging.
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
Be sure that all equipment, jigs, and tools in the
working area are grounded to earth.
10. Operators must wear antistatic clothing and conductive
shoes (or a leg or heel strap).
Environment
1. When humidity in the working environment decreases,
the human body and other insulators can easily become
charged with electrostatic electricity due to friction.
Maintain the recommended humidity of 40% to 60% in
the work environment.
2.
3.
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22
AN-9080
APPLICATION NOTE
Circuit Board Coating
When using devices in equipment requiring high reliability
or in extreme environments (where moisture, corrosive gas,
or dust is present), circuit boards can be coated for
protection. However, before doing so, carefully examine the
possible effects of stress and contamination that may result.
There are many and varied types of coating resins whose
selection is, in most cases, based on experience. However,
because device-mounted circuit boards are used in various
ways, factors such as board size, board thickness, and the
effects that components have on one another; makes it
practically impossible to predict the thermal and mechanical
stresses to which the semiconductor devices are subjected.
8.2. Packing Specifications
Motion SPM 5 Series products are normally shipped in tube.
The SMD package is shipped in tape. More detailed
information can be found in Figure 42 for DIP package, in
Figure 43 and Figure 44 for SMD package, in Figure 45 for
Double-DIP package, and in Figure 46 for Zigzag-DIP
package. Please ignore internal package names shown in
these figures.
Figure 42. Packing Information for DIP Package
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
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23
AN-9080
APPLICATION NOTE
Figure 43. Packing Information for SMD Package
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
www.fairchildsemi.com
24
AN-9080
APPLICATION NOTE
Figure 44. Packing Information for SMD Package (Continued)
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
www.fairchildsemi.com
25
AN-9080
APPLICATION NOTE
Figure 45. Packing Information for Double-DIP Package
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
www.fairchildsemi.com
26
AN-9080
APPLICATION NOTE
Figure 46. Packing Information for Zigzag-DIP Package
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
www.fairchildsemi.com
27
AN-9080
9.
APPLICATION NOTE
Related Resources
AN-9760: PCB Design Guidance for SPM®
AN-9082: Motion SPM® 5 Series Thermal Performance Information by Contact Pressure
AN-9042: Motion SPM® 5 Series V1 User’s Guide
RD-FSB50450A (Reference Design)
RD-402 FSB50760SF (Reference Design)
FSB50660SF(T) — Motion SPM® 5 SuperFET® Series
FSB50760SF(T) — Motion SPM® 5 SuperFET® Series
FSB50450AS — Motion SPM® 5 Series
FSB50825AS — Motion SPM® 5 Series
FSB50250A(T) — Motion SPM® 5 Series
FSB50250AS — Motion SPM® 5 Series
FSB50325A(T) — Motion SPM® 5 Series
FSB50450A — Motion SPM® 5 Series
FSB50550A(T) — Motion SPM® 5 Series
FSB50550AS — Motion SPM® 5 Series
SPM® Module Design Guide
Motion Control Design Tool
FCM8531 — MCU Embedded and Configurable 3-Phase PMSM / BLDC Motor Controller
FCM8201 — 3-Phase Sinusoidal Brushless DC Motor Controller
FCM8202 — 3-Phase Sinusoidal Brushless DC Motor Controller
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without
notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most
recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty
therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b)
support or sustain life, or (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in
significant injury to the user.
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 4/16/14
2.
A critical component is any component of a life support device
or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
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28