SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs

SMOS44/48N50D2, SMOS44/48N50D3
Power MOSFETs
Dimensions SOT-227(ISOTOP)
Symbol
HiPerFET MOSFET
VDSS
Test Conditions
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
37.80
30.30
38.20
1.186
1.489
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
V
W
3.30
0.780
4.57
0.830
0.130
19.81
0.180
21.08
Maximum Ratings
o
500
o
o
500
VGS
Continuous
±20
VGSM
Transient
±30
ID25
TC=25oC
TC=25oC;pulse width limited by max. TJM
44N50
44
48N50
48
44N50
176
48N50
192
Unit
V
V
A
A
IAR
TC=25oC
24
A
EAR
Repetitive
30
mJ
dv/dt
IS
IDM; -di/dt
5
V/ns
TJ
o
520
W
600
V
100A/us; VDD
VDSS'
150 C; RG=2
TC=25oC
VRRM
DIODE
31.88
8.20
o
TJ=25 C to 150 C
Inches
Min.
Max.
31.50
7.80
TJ=25 C to 150 C; RGS=1M
IDM
Millimeter
Min.
Max.
A
B
VDGR
PD
o
IFAVM
TC=70 C; rectangular; d=0.5
60
A
IFRM
tp <10us; pulse width limited by TJ
800
A
180
W
PD
CASE
Dim.
o
TC=25 C
TJ
-40…+150
TJM
150
Tstg
-40…+150
VISOL
Md
Weight
50/60 Hz, RMS
t=1 min
2500
IISOL
t=1 s
3000
1 mA
Mounting torque
1.5/13
Terminal connection torque(M4)
1.5/13
30
o
C
V~
Nm/Ib.in.
g
SMOS44/48N50D2, SMOS44/48N50D3
Power MOSFETs
(TJ=25oC, unless otherwise specified)
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Characteristic Values
min.
typ.
max.
500
2
4
±200
400
2
0.12
0.10
Test Conditions
VGS=0V; ID=1 mA
VDS=VGS; ID=8 mA
VGS=±20VDC; VDS=0
VDS=0.8VDSS; TJ=25oC
VGS=0V; TJ=125oC
VGS=10V; ID=0.5ID25
44N50
48N50
Pulse test, t 300us, duty cycle d
Unit
V
V
nA
uA
mA
2%
(TJ=25oC, unless otherwise specified)
Symbol
gts
Cies
Coes
Cres
Qg(on)
Qgs
Qgd
td(on)
tr
td(off)
tf
RthJC
RthCK
Characteristic Values
min.
typ.
max.
Test Conditions
VDS=10V; ID=0.5ID25; pulse test
22
42
8400
900
280
270
60
135
30
60
100
30
0.24
0.05
VGS=0V; VDS=25V; f=1MHz
VGS=10V; VDS=0.5VDSS'; ID=0.5ID25
VGS=10V; VDS=0.5VDSS; ID=0.5ID25
RG=1 (External)
Symbol
typ.
o
TJ=25 C; VR=VRRM
VR=0.8VRRM
o
TJ=125 C; VR=0.8VRRM
o
IF=7A; VGS=0V; TJ=150 C
Pulse test, t
trr
IRM
nC
ns
ns
ns
ns
K/W
K/W
300us, duty cycle d
2%; TJ=25 C
II=1A; di/dt= - 200A/us; VR=30V; TJ=25oC
o
IF=60A; di/dt= - 480A/us; VR=350V; TJ=100 C
Unit
max.
200
uA
100
uA
14
mA
1.5
o
1.8
V
35
50
ns
19
21
A
0.7
K/W
RthJC
RthJK
pF
Characteristic Values
Test Conditions
min.
VF
S
(TJ=25oC, unless otherwise specified)
Ultra-fast Diode
IR
Unit
0.05
K/W