IXYS IXFN48N55

Advanced Technical Information
HiPerFETTM
Power MOSFETs
Single Die MOSFET
IXFN 48N55
VDSS =
ID25 =
RDS(on) =
550 V
48 A
110 mW
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
trr £ 250 ns
G
S
S
Symbol
Test Conditions
Maximum Ratings
VDSS
T J = 25°C to 150°C
550
V
VDGR
T J = 25°C to 150°C; RGS = 1 MW
550
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
48
A
miniBLOC, SOT-227 B
E153432
S
G
S
D
IDM
TC = 25°C, pulse width limited by TJM
192
A
IAR
TC = 25°C
44
A
EAR
TC = 25°C
60
mJ
EAS
TC = 25°C
3
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
T J £ 150°C, RG = 2 W
5
V/ns
PD
TC = 25°C
600
W
Features
-55 ... +150
°C
• International standard package
• miniBLOC, with Aluminium nitride
TJ
TJM
150
°C
Tstg
-55 ... +150
°C
-
°C
2500
3000
V~
V~
TJ
1.6 mm (0.63 in) from case for 10 s
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
Md
Mounting torque
Terminal connection torque
t = 1 min
t=1s
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
•
•
rated
Low package inductance
Fast intrinsic Rectifier
g
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3 mA
550
VGH(th)
VDS = VGS, ID = 8 mA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
V
4.5
V
±100
nA
TJ = 25°C
TJ = 125°C
100
2
mA
mA
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
110
mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
98711 (03/24/00)
1-2
IXFN 48N55
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
30
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG = 1 W (External),
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
45
S
8900
pF
1000
pF
330
pF
42
ns
55
ns
M4 screws (4x) supplied
110
ns
Dim.
45
ns
330
31.88
8.20
1.240
0.307
1.255
0.323
nC
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
60
nC
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
65
nC
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
K/W
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
K/W
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
0.05
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
48
A
Repetitive;
pulse width limited by TJM
192
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.3
V
t rr
QRM
IRM
IF = 50A, -di/dt = 100 A/ms, VR = 100 V
250
ns
mC
A
© 2000 IXYS All rights reserved
Inches
Min.
Max.
31.50
7.80
0.21
Source-Drain Diode
Millimeter
Min.
Max.
A
B
RthJC
RthCK
miniBLOC, SOT-227 B
1.4
8
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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