SG50N06D2S, SG50N06D3S Discrete IGBTs Dimensions SOT-227(ISOTOP) SG50N06D3S SG50N06D2S Symbol Test Conditions CASE DIODE IGBT o Dim. Millimeter Min. Max. 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 Maximum Ratings o 600 600 ±20 ±30 75 50 200 ICM=100 @ 0.8VCES 250 600 60 600 150 300 VCES TJ=25 C to 150 C VCGR TJ=25oC to 150oC; RGE=1M VGES Continuous VGEM Transient IC25 TC=25oC IC90 TC=90oC ICM TC=25oC; 1 ms SSOA VGE=15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load; L=30uH PC TC=25oC VRRM IFAVM TC=70oC; rectangular; d=50% IFRM tp 10ms; pulse width limited by TJ PD TC=25oC Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TJ TJM Tstg Md Mounting torque Terminal connection torque(M4) Weight Inches Min. Max. A B Unit V V A A W V A A W o C -40…+150 150 -40…+150 1.5/13 1.5/13 30 A Nm/Ib.in. g o (TJ=25 C, unless otherwise specified) Symbol Test Conditions BVCES IC=250uA; VGE=0V VGE(th) IC=250uA; VCE=VGE ICES VCE=0.8VCES; VGE=0V; 600 2.5 o TJ=25 C o TJ=125 C IGES VCE=0V; VGE=±20V VCE(sat) IC=IC90; VGE=15V Characteristic Values min. typ. max. Unit V 5.0 V 200 uA 1 mA ±100 nA 2.5 V SG50N06D2S, SG50N06D3S Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol gts Characteristic Values Test Conditions IC=IC90; VCE=10V Pulse test, t 300us, duty cycle min. typ. 35 50 VCE=25V; VGE=0V; f=1MHz 290 50 Qg 110 IC=IC90; VGE=15V; VCE=0.5VCES tri td(off) tfi Eoff td(on) pF 30 Qgc td(on) S 4100 Cres Qge max. 2% Cies Coes Unit nC 35 o Inductive load, TJ=25 C 50 ns IC=IC90; VGE=15V; L=100uH 50 ns VCE=0.8VCES; RG=Roff=2.7 Remarks:Switching times may increase for VCE(Clamp) 0.8VCES' higher TJ or increased RG 110 250 ns 150 220 ns 3.0 4.0 mJ o Inductive load, TJ=125 C 50 ns tri IC=IC90; VGE=15V; L=100uH 60 ns Eon VCE=0.8VCES; RG=Roff=2.7 3.0 mJ td(off) Remarks:Switching times may increase 200 ns for VCE(Clamp) 250 ns 4.2 mJ tfi Eoff 0.8VCES' higher TJ or increased RG RthJC 0.50 RthCK 0.05 Symbol Characteristic Values Test Conditions min. IR IRM trr RthJC K/W (TJ=25oC, unless otherwise specified) Reverse Diode (FRED) VF K/W typ. o IF=60A; TVJ=150 C Pulse test, t 300us, duty cycle d o 2%; TVJ=25 C TVJ=25oC; VR=VRRM TVJ=150oC IF=IC90; VGE=0V; -diF/dt=100A/us; VR=540V o IF=1A; -di/dt=50A/us; VR=30V; TJ=25 C Unit max. 1.75 2.40 V 650 2.5 uA mA 8.0 A 35 ns 0.85 K/W