VDSS HiPerFET TM Power MOSFETs trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr PLUS 247TM (IXFX) Test Conditions Maximum Ratings G VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C 44 48 176 192 48 A A A A A EAR EAS TC = 25°C TC = 25°C 60 2.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 15 V/ns PD TC = 25°C 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 44N50 48N50 44N50 48N50 TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.4/6 PLUS 247 TO-264 Nm/lb.in. 6 10 g g Symbol Test Conditions VDSS VGS = 0 V, ID = 250uA 500 V VGS(th) VDS = VGS, ID = 4mA 2.0 4.0 V IGSS VGS = ±20 V, VDS = 0 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 125°C RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 44N50 48N50 © 2003 IXYS All rights reserved RDS(on) IXFK/IXFX 48N50Q 500 V 48 A 100 mΩ Ω Ω IXFK/IXFX 44N50Q 500 V 44 A 120 mΩ Q-CLASS Symbol ID25 100 µA 2 mA 120 mΩ 100 mΩ (TAB) D TO-264 AA (IXFK) G G = Gate S = Source D (TAB) S D = Drain TAB = Drain Features z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive - faster switching z International standard packages z Low RDS (on) z Rated for unclamped Inductive load switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting z Space savings z High power density z DS98612D(08/03) IXFK/IXFX 48N50Q IXFK/IXFX 44N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 30 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 42 S 7000 pF 960 pF Crss 230 pF td(on) 33 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 22 ns td(off) RG = 1 Ω (External), 75 ns 10 ns 190 nC 40 nC 86 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.26 RthJC RthCK 0.15 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. trr QRM K/W IF = 25A,-di/dt = 100 A/µs, VR = 100 V IRM Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 48 A 192 A 1.5 V 250 ns 1.0 µC 10 A PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFK/IXFX 48N50Q IXFK/IXFX 44N50Q Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 48 120 VGS = 10V 7V 42 90 6V 30 I D - Amperes I D - Amperes 36 24 18 12 VGS = 10V 8V 7V 60 6V 30 5V 6 5V 0 0 0 1 2 3 4 5 6 7 8 0 V D S - Volts Fig. 3. Output Characteristics @ 125 Deg. C 48 10 12 V D S - Volts 14 16 18 20 2.4 R D S (on) - Normalized I D - Amperes 8 VGS = 10V 2.6 30 24 18 5V 2.2 2 1.8 I D = 48A 1.6 I D = 24A 1.4 1.2 1 0.8 6 0.6 0 0.4 0 2 4 6 8 10 12 14 -50 16 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID Fig. 6. Drain Current vs. Case Tem perature 3.4 54 VGS = 10V 3.1 48 2.8 42 TJ = 125ºC 2.5 I D - Amperes R D S (on) - Normalized 6 2.8 36 12 4 Fig. 4. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature VGS = 10V 7V 6V 42 2 2.2 1.9 1.6 1.3 36 30 24 18 12 TJ = 25ºC 1 0.7 6 0 0 12 24 36 48 60 72 I D - Amperes © 2003 IXYS All rights reserved 84 96 108 120 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFK/IXFX 48N50Q IXFK/IXFX 44N50Q Fig. 8. Transconductance Fig. 7. Input Adm ittance 60 80 54 70 60 42 g f s - Siemens I D - Amperes 48 36 30 24 TJ = 125ºC 25ºC -40ºC 18 12 TJ = -40ºC 25ºC 125ºC 50 40 30 20 10 6 0 0 3.5 4 4.5 5 5.5 6 6.5 0 6 12 18 V G S - Volts 100 10 90 9 80 8 70 7 60 50 TJ = 125ºC 36 42 48 54 60 VDS = 250V I D = 24A I G = 10mA 6 5 4 3 30 TJ = 25ºC 20 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 20 40 60 80 100 120 140 160 180 200 Q G - nanoCoulombs V S D - Volts Fig. 12. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 10000 1 f = 1MHz C iss R (th) J C - (ºC/W) Capacitance - pF 30 Fig. 10. Gate Charge VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-ToDrain Voltage 40 24 I D - Amperes C oss 1000 0.1 C rss 100 0.01 0 5 10 15 20 25 30 35 40 V D S - Volts 1 10 100 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 1000