HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q RDS(on) 500 V 44 A 120 mW 500 V 48 A 100 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50 44 48 A A IDM TC = 25°C, pulse width limited by TJM 44N50 48N50 176 192 A A Maximum Ratings IAR TC = 25°C 48 A EAR EAS TC = 25°C 60 2.5 mJ mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 500 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C TJ VISOL 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s 2500 3000 V~ V~ Md Mounting torque Terminal connection torque 1.5/13 1.5/13 Nm/lb.in. Nm/lb.in. 30 g Weight Symbol Test Conditions VDSS VGS = 0 V, ID = 1 mA 500 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C 44N50 48N50 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved ID25 V 4.0 V ±100 nA 100 2 mA mA 120 100 mW mW miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • Unclamped Inductive Switching (UIS) rated • Low RDS (on) • Fast intrinsic diode • International standard package • miniBLOC with Aluminium nitride isolation for low thermal resistance • Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf) • Molding epoxies meet UL 94 V-0 flammability classification Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Easy to mount • Space savings • High power density 98715 (03/30/00) 1-2 IXFN 44N50Q IXFN 48N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 • ID25, pulse test C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 30 45 S 6400 pF 930 pF 220 pF miniBLOC, SOT-227 B 33 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 22 ns M4 screws (4x) supplied td(off) RG = 4.7 W (External), 75 ns Dim. 10 ns 190 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 40 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 86 nC G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 K/W L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 0.26 0.05 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 48 A Repetitive; pulse width limited by TJM 192 A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 ns mC A IF = IS, -di/dt = 100 A/ms, VR = 100 V © 2000 IXYS All rights reserved Inches Min. Max. A B RthJC RthCK Millimeter Min. Max. 1.4 10 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2