2SA1193(K) Silicon PNP Epitaxial, Darlington REJ03G0641-0200 (Previous ADE-208-1013) Rev.2.00 Aug.10.2005 Application High gain amplifier Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 2 1. Emitter 2. Collector 3. Base 3 1 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 5 Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –60 –60 –7 –0.5 –1.0 0.9 150 –55 to +150 Unit V V V A A W °C °C 2SA1193(K) Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test Rev.2.00 Aug 10, 2005 page 2 of 5 Symbol V(BR)CEO ICBO IEBO hFE VCE(sat) VBE(sat) ton toff Min –60 — — 2000 — — — — Typ — — — — — — 0.3 0.9 Max — –1.0 –1.0 — –1.5 –2.0 — — Unit V µA µA V V µs µs Test conditions IC = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IC = 0 VCE = –3 V, IC = –250 mA*1 IC = –250 mA, IB = –0.5 mA*1 IC = –250 mA IB1 = –IB2 = –0.5 mA 2SA1193(K) Main Characteristics Area of Safe Operation –3 0.6 0.3 0 50 100 iC (peak) –1.0 IC max –0.3 –0.1 –0.01 Ambient Temperature Ta (°C) –10 –100 –300 DC Current Transfer Ratio vs. Collector Current 100,000 –500 00 –1 –80 0 –6 –400 DC Current transfer ratio hFE Collector current IC (mA) –30 Collector to Emiter Voltage VCE (V) Typical Output Characteristics –40 –300 P C = –20 0. 9W –200 –10 –100 –5 µA 30,000 Ta = 75 °C 10,000 25 °C IB = 0 0 –2 –4 –6 –8 3,000 1,000 300 VCE = –3 V Pulse 100 –10 –10 –30 –100 –300 –1,000 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Saturation Voltage vs. Collector Current Switching Time vs. Collector Current 10 –10 IC = 500 IB Pulse –3 Switching time t (µs) Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) Ta = 25°C –0.03 –0.003 –3 150 t ho 1 s hot s ot ms ms 1 1 sh ms = 1W = 10 00 P =1 PW Collector current IC (A) 0.9 PW Collector power dissipation PC (W) Maximum Collector Dissipation Curve VBE(sat) Ta = 25°C –1.0 VCE(sat) 75°C –0.3 3 tstg 0.3 ton 0.1 td 0.03 –0.1 –10 –30 –100 –300 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 –1,000 toff 1.0 0.01 –10 IC = 500 IB Ta = 25°C –30 –100 –300 Collector Curret IC (mA) –1,000 2SA1193(K) Switching Time Test Circuit Response Waveform IC VIN R1 R2 VIN tr, tf < = 10 ns PW > = 10 µs duty ratio < = 10 % 50 VRB 6V IB1 IB2 R3 0.002 µ 0.002 µ + – + – 50 µ 50 µ Rev.2.00 Aug 10, 2005 page 4 of 5 10% D.U.T. Input –10 V 0 Output 90% tstg 10% 10% 90% 90% VCC td ton toff 2SA1193(K) Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g 4.8 ± 0.4 Unit: mm 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Ordering Information Part Name 2SA1193KTZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. 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