HUR1560 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C(TAB) A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR1560 Symbol VRRM V 600 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Maximum Ratings Unit IFRMS IFAVM TC=140oC; rectangular, d=0.5 35 15 A IFSM TVJ=45oC; tp=10ms (50Hz), sine 110 A 0.1 mJ 0.1 A EAS IAR o TVJ=25 C; non-repetitive; IAS=1A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive -55...+175 175 -55...+150 TVJ TVJM Tstg Ptot TC=25oC Md mounting torque Weight typical o C 95 W 0.4...0.6 Nm 2 g HUR1560 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 100 0.5 uA mA VF IF=15A; TVJ=150oC TVJ=25oC 1.35 2.04 V RthJC RthCH trr IRM 1.6 0.5 IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC 35 o VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C K/W ns 4.9 A FEATURES APPLICATIONS ADVANTAGES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR1560 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 40 2000 A 30 IF 40 TVJ= 100°C nC VR = 300V 1500 TVJ= 25°C 20 30 IRM Qr TVJ=150°C TVJ=100°C 1000 10 0 1 2 IF= 30A IF= 15A IF= 7.5A 10 0 100 V 0 A/us 1000 -diF/dt VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 120 trr 400 600 A/us 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 1.6 VFR VFR 15 IF= 30A IF= 15A IF= 7.5A 100 1.0 us tfr 1.2 tfr 10 0.8 5 0.4 90 Qr 0.5 200 TVJ= 100°C V IF = 15A 110 Kf IRM 0 20 TVJ= 100°C VR = 300V ns 1.5 IF= 30A IF= 15A IF= 7.5A 20 500 0 TVJ= 100°C VR = 300V A 80 0.0 70 0 40 80 120 °C 160 0 0 TVJ 200 400 600 800 1000 A/us 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 10 0.0 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 ZthJC 1 2 3 Rthi (K/W) ti (s) 0.908 0.35 0.342 0.0052 0.0003 0.017 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 s 0.1 1 t Fig. 7 Transient thermal resistance junction to case Sirectifier R