DSEP 8-06B HiPerFREDTM Epitaxial Diode IFAV = 10 A VRRM = 600 V trr = 30 ns with soft recovery VRSM VRRM V V 600 600 Type C A TO-220 AC C DSEP 8-06B A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 125°C; rectangular, d = 0.5 35 10 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 50 A EAS TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH 0.1 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A -55...+175 175 -55...+150 °C °C °C 60 W 0.4...0.6 Nm TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical Symbol Conditions IR ① VF ② 2 g Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 60 0.25 µA mA IF = 10 A; 1.66 2.66 V V 2.5 0.5 K/W K/W 30 ns TVJ = 150°C TVJ = 25°C RthJC RthCH trr IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs TVJ = 100°C 2.4 A Features • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 418 Data according to IEC 60747 and per diode unless otherwise specified: 1-2 DSEP 8-06B 30 250 A nC 25 20 IF = 20 A IF = 5 A 150 6 IF = 10 A TVJ = 100°C 15 IF = 10 A 8 IRM Qr IF = 5 A A VR = 300 V 200 TVJ = 150°C IF 10 TVJ = 100°C IF = 20 A 100 4 50 2 TVJ = 100°C 10 VR = 300 V 5 TVJ = 25°C 0 0 1 2 0 100 V 3 0 A/µs 1000 -diF/dt VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 ns 400 600 A/µs 800 1000 -diF/dt 0.3 TVJ = 100°C V µs IF = 10 A VR = 300 V tfr VFR trr 1.5 200 Fig. 3 Peak reverse current IRM versus -diF/dt 60 TVJ = 100°C 100 0 Kf 40 IF = 5 A 80 0.2 IF = 10 A 1.0 IF = 20 A IRM 60 20 tfr VFR 0.5 Qr 40 0.0 0 0 40 0.1 80 120 C 160 0 200 400 600 TVJ 800 1000 A/µs 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 10 0.0 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 1.449 0.5578 0.4931 0.0052 0.0003 0.0169 0.1 0.01 0.001 0.00001 DSEP 8-06B 0.0001 0.001 0.01 s 0.1 NOTE: Fig. 2 to Fig. 6 shows typical values 1 t IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 418 Fig. 7 Transient thermal resistance junction to case 2-2