DSEP 60-06A DSEP 60-06AT HiPerFREDTM Epitaxial Diode IFAV = 60 A VRRM = 600 V trr = 35 ns with soft recovery Preliminary Data VRSM VRRM V V 600 600 Type A DSEP 60-06A C TO-247 AD (A-Type) TO-268 AA (AT-Type) DSEP 60-06AT A C A A C (TAB) C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TVJ = TVJM TC = 110°C; rectangular, d = 0.5 IFSM 70 60 A A TVJ = 45°C; tp = 10 ms (50 Hz), sine 600 A EAS TVJ = 25°C; non-repetitive IAS = 1.6 A; L = 180 µH 0.3 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A -55...+175 175 -55...+150 °C °C °C 230 W Features ● ● ● ● ● TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical 0.8...1.2 6 Nm g ● ● Applications ● ● ● Symbol IR ① VF ② Conditions Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 650 2.5 mA mA IF = 60 A; 1.39 2.04 V V 0.65 K/W K/W TVJ = 150°C TVJ = 25°C RthJC RthCH trr IRM 0.25 IF = 1 A; -di/dt = 300 A/ms; VR = 30 V; TVJ = 25°C 35 VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms TVJ = 100°C ● ● ● ● ● Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ns ● 8.3 A ● ● Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 ms, Duty Cycle < 2.0 % International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 018 Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSEP 60-06A DSEP 60-06AT 160 A 140 IF 4000 nC 120 80 TVJ= 100°C VR = 300V A 3000 TVJ= 25°C 60 IF=120A IF= 60A IF= 30A Qr 100 TVJ=100°C 80 TVJ= 100°C VR = 300V IRM 2000 40 1000 20 IF=120A IF= 60A IF= 30A TVJ=150°C 60 40 20 0 0 1 2 0 100 V A/ms 1000 -diF/dt VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 140 2.0 TVJ= 100°C VR = 300V ns 130 trr 1.5 Kf 0 0 400 ms 1000 600 A/ 800 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 20 1.6 V VFR 15 µs tfr 1.2 tfr 120 IF=120A IF= 60A IF= 30A 110 1.0 200 VFR 10 0.8 5 0.4 I RM 100 0.5 Qr 90 0.0 TVJ= 100°C IF = 60A 80 0 40 80 120 °C 160 0 TVJ 200 400 800 A/ ms 1000 600 0 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 1 0.0 ms 1000 600 A/ 800 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.324 0.125 0.201 0.0052 0.0003 0.0385 0.01 0.001 0.0001 0.00001 DSEP 60-06A 0.0001 0.001 0.01 s 0.1 1 t NOTE: Fig. 2 to Fig. 6 shows typical values © 2000 IXYS All rights reserved 018 Fig. 7 Transient thermal resistance junction to case 2-2