IXYS DSEP60-06AT

DSEP 60-06A
DSEP 60-06AT
HiPerFREDTM Epitaxial Diode
IFAV = 60 A
VRRM = 600 V
trr
= 35 ns
with soft recovery
Preliminary Data
VRSM
VRRM
V
V
600
600
Type
A
DSEP 60-06A
C
TO-247 AD
(A-Type)
TO-268 AA
(AT-Type)
DSEP 60-06AT
A
C
A
A
C (TAB)
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
TVJ = TVJM
TC = 110°C; rectangular, d = 0.5
IFSM
70
60
A
A
TVJ = 45°C; tp = 10 ms (50 Hz), sine
600
A
EAS
TVJ = 25°C; non-repetitive
IAS = 1.6 A; L = 180 µH
0.3
mJ
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.2
A
-55...+175
175
-55...+150
°C
°C
°C
230
W
Features
●
●
●
●
●
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Md
mounting torque
Weight
typical
0.8...1.2
6
Nm
g
●
●
Applications
●
●
●
Symbol
IR
①
VF ②
Conditions
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
650
2.5
mA
mA
IF = 60 A;
1.39
2.04
V
V
0.65
K/W
K/W
TVJ = 150°C
TVJ = 25°C
RthJC
RthCH
trr
IRM
0.25
IF = 1 A; -di/dt = 300 A/ms;
VR = 30 V; TVJ = 25°C
35
VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms
TVJ = 100°C
●
●
●
●
●
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
ns
●
8.3
A
●
●
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
018
Data according to IEC 60747 and per diode unless otherwise specified
1-2
DSEP 60-06A
DSEP 60-06AT
160
A
140
IF
4000
nC
120
80
TVJ= 100°C
VR = 300V
A
3000
TVJ= 25°C
60
IF=120A
IF= 60A
IF= 30A
Qr
100
TVJ=100°C
80
TVJ= 100°C
VR = 300V
IRM
2000
40
1000
20
IF=120A
IF= 60A
IF= 30A
TVJ=150°C
60
40
20
0
0
1
2
0
100
V
A/ms 1000
-diF/dt
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
140
2.0
TVJ= 100°C
VR = 300V
ns
130
trr
1.5
Kf
0
0
400
ms 1000
600 A/
800
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
20
1.6
V
VFR
15
µs
tfr
1.2
tfr
120
IF=120A
IF= 60A
IF= 30A
110
1.0
200
VFR
10
0.8
5
0.4
I RM
100
0.5
Qr
90
0.0
TVJ= 100°C
IF = 60A
80
0
40
80
120 °C 160
0
TVJ
200
400
800
A/
ms 1000
600
0
0
200
400
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
1
0.0
ms 1000
600 A/
800
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
i
0.1
1
2
3
ZthJC
Rthi (K/W)
ti (s)
0.324
0.125
0.201
0.0052
0.0003
0.0385
0.01
0.001
0.0001
0.00001
DSEP 60-06A
0.0001
0.001
0.01
s
0.1
1
t
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
018
Fig. 7 Transient thermal resistance junction to case
2-2