DA221 Diodes Switching diode DA221M zApplication Ultra high speed switching zExternal dimensions (Unit : mm) zLand size figure (Unit : mm) 0.8 0.13±0.05 0.32±0.05 zFeatures 1) Ultra small mold type. (VMD3) 2) High reliability. 0.45 1.2±0.1 0.5 1.15 (3) 0.45 1.2±0.1 0.8±0.1 0.4 0～0.1 0.4 (1) zConstruction Silicon epitaxial planar (2) 0.22±0.05 0.22±0.05 VMD3 0.5±0.05 0.4 0.4 zStructure (1)D1:A (2)D2:C (3)D1:C D2:A ROHM : VMD3 dot (year week factory) zTaping specifications (Unit : mm) 0.3±0.1 2.0±0.04 φ1.55±0.05 φ0.5±0.05 (4.0±0.1) 1.3±0.05 0 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) I Forward current surge peak（single） FM Average rectified forward current（single） Io Isurge Surge current（t=1us） (single) Power dissipation Pd Junction temperature Tj Storage temperature Tstg zElectrical characteristics (Ta=25°C) Parameter Symbol Forward voltage VF Reverse current IR Capacitance between terminals Ct 2.0±0.05 Limits 20 20 200 100 300 150 150 -55 to +150 8.0±0.1 5.5±0.2 0～0.1 1.35±0.05 0 3.5±0.05 1.75±0.07 4.0±0.07 0.6±0.05 0 Unit V V mA mA mA mW ℃ ℃ Min. - Typ. - Max. 1.0 0.1 Unit V µA - - 4.0 pF Conditions IF=10mA VR=15V VR=6V , f=1MHz Rev.B 1/3 DA221 Diodes zElectrical characteristic curves (Ta=25°C) 100 100 Ta=-25℃ 1 Ta=75℃ 10 Ta=25℃ Ta=125℃ Ta=150℃ 1 Ta=-25℃ 0.1 0.1 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS Ta=75℃ Ta=25℃ 0.1 Ta=-25℃ 0.001 5 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 5 700 690 860 850 840 830 2 AVE:0.620nA 0.7 0.6 0.5 0.4 AVE:0.1065nA 0.3 0.2 5 D1 6 5 4 3 AVE:1.85pF 2 1 0 0 Ta=25℃ VR=15V n=30pcs D1 IR DISPERSION MAP Ta=25℃ VR=6V f=1MHz n=10pcs 7 1 IR DISPERSION MAP 0.8 0 RESERVE RECOVERY TIME:trr(ns) 4 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 5 8 15 0.1 10 9 10 0.9 VF DISPERSION MAP Ta=25℃ VR=15V n=30pcs 6 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS AVE:849.7mV 10 3 0 1 Ta=25℃ IF=10mA n=30pcs D2 VF DISPERSION MAP 7 1 15 820 D2 D2 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS AVE:709.8mV 680 8 10 REVERSE CURRENT:IR(nA) 710 9 f=1MHz 870 D1 15 0.1 0 FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 720 10 10 1 15 730 Ta=25℃ IF=10mA n=30pcs 5 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0.1 0 Ta=-25℃ 0.01 f=1MHz D1 1 D2 Ta=25℃ 0.1 0 10 Ta=125℃ 10 0.01 Ta=75℃ D1 1 0.001 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=150℃ 10 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 100 100 200 300 400 500 600 700 800 900 100 110 0 0 REVERSE CURRENT:IR(nA) Ta=25℃ Ta=150℃ 0 Ta=125℃ D2 Ta=125℃ 10 Ta=150℃ 100 Ta=75℃ FORWARD CURRENT:IF(mA) FORWARD CURRENT:IF(mA) D1 Ta=25℃ VR=6V IF=10mA RL=100Ω Irr=0.1*IR n=10pcs D1 4 3 2 1 AVE:1.20ns 0 Ct DISPERSION MAP trr DISPERSION MAP Rev.B 2/3 DA221 Diodes Rth(j-c) Mounted on epoxy board IM=1mA 10 1ms IF=10mA time 4.5 3.5 3 2.5 AVE:0.33kV AVE:0.96kV 2 1.5 1 0 10 TIME:t(s) Rth-t CHARACTERISTICS 9 4 0.5 300us 0.1 D1 1000 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP ELECTROSTATIC DISCHARGE TEST ESD(KV) 100 1 0.001 10 5 Rth(j-a) ELECTROSTATIC DISCHARGE TEST ESD(KV) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 D2 8 7 6 5 4 3 AVE:5.06kV AVE:1.27kV 2 1 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1