ROHM RB400VA-50

RB400VA-50
Diodes
Schottky barrier diode
RB400VA-50
zApplications
General rectification
z Land size figure (Unit : mm)
z External dimensions (Unit : mm)
0.17±0.1
0.05
1.1
1.3±0.05
1.9±0.1
2.5±0.2
zFeatures
1) Small mold type. (TUMD2)
2) Low IF, Low IR.
3) High reliability.
2.0
CATHODE MARK
0.8 0.5
0~0.1
0.8±0.05
0.6±0.1
0.05
TUMD2
1.3±0.1
0.47
1.45±0.1
250
0.3±0.04
0.03
ROHM : TUMD2
dot (year w eek factory)+day
zStructure
0.4±0.1
zConstruction
Silicon epitaxial planar
0.15±0.03
0~0.1
0.6±0.1
0.05
0.04
z Taping specifications (Unit : mm)
8.0±0.2
φ1.0±0.2
0
2.8±0.05
2.8±0.05
3.5±0.05
4.0±0.1
1.43±0.05
0.25±0.05
1.75±0.1
φ1.55±0.1
0.05
2.0±0.05
4.0±0.1
0.9±0.08
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
VRM
VR
Io
IFSM
Tj
50
40
0.5
3
125
V
V
A
A
℃
Storage temperature
Tstg
-40 to +125
℃
zElectrical characteristics (Ta=25°C)
Parameter
Forward voltage
R everse current
C apacitance between terminal
Symbol
Min.
Typ.
Max.
Unit
VF1
-
-
0.55
V
IF=500mA
Conditions
IR1
-
-
30
µA
VR=10V
IR2
-
-
50
µA
VR=30V
Ct1
-
125
-
pF
VR=0V , f=1MHz
Ct2
-
20
-
pF
VR=10V , f=1MHz
1/3
RB400VA-50
Diodes
zElectrical characteristic curves (Ta=25°C)
10000
1000
1000
Ta=25℃
10
Ta=-25℃
1
100
Ta=75℃
Ta=25℃
1
Ta=-25℃
0.1
200
400
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
10
15
20
25
30
35
40
0
10
490
480
AVE:495.8mV
470
7
6
5
4
AVE:0.510uA
3
2
170
160
150
140
AVE:117.5pF
120
22
20
19
18
17
AVE:20.66pF
10
AVE:5.30A
0
IFSM DISRESION MAP
10
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Ifsm
8
8.3ms
8.3ms
1cyc
6
4
2
0
Ifsm
8
t
6
4
2
0
1
trr DISPERSION MAP
8.3ms
20
Ct DISPERSION MAP
20
1cyc
Ifsm
21
Ct DISPERSION MAP
0
2
30
23
100
AVE:9.3ns
AVE:1.562uA
3
IR DISPERSION MAP
Ta=25℃
f=1MHz
VR=10V
n=10pcs
24
15
5
4
0
16
10
5
1
110
15
6
0
25
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
180
30
7
IR DISPERSION MAP
Ta=25℃
f=1MHz
VR=0V
n=10pcs
190
25
Ta=25℃
VR=35V
n=30pcs
8
1
VF DISPERSION MAP
200
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
9
REVERSE CURRENT:IR(uA)
500
8
PEAK SURGE
FORWARD CURRENT:IFSM(A)
510
5
10
Ta=25℃
VR=10V
n=30pcs
9
REVERSE CURRENT:IR(uA)
FORWARD VOLTAGE:VF(mV)
5
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
520
Ta=25℃
IF=0.5A
n=30pcs
10
1
0
600
PEAK SURGE
FORWARD CURRENT:IFSM(A)
0
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
100
10
0.01
0.1
RESERVE RECOVERY TIME:trr(ns)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125℃
130
f=1MHz
1000
Ta=75℃
100
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(mA)
Ta=125℃
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
2/3
RB400VA-50
Diodes
IF=0.2A
0.015
Rth(j-a)
time
300us
D=1/2
0.5
100
Rth(j-c)
DC
Sin(θ=180)
0.001
0.1
10
0
1000
0.01
D=1/2
Sin(θ=180)
DC
0.005
0
0
10
0.2
0.4
0.6
0.8
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
1
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-P R CHARACTERISTICS
2
1.5
0A
Io
0V
VR
t
D=1/2
1
DC
T
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
2
AVERAGE RECTIFIDE
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:P R (W)
1ms
0.02
1
Mounted on epoxy board
IM=10mA
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
1000
D=t/T
VR=20V
Tj=125℃
0.5
1.5
0A
Io
0V
VR
t
D=1/2
1
DC
T
D=t/T
VR=20V
Tj=125℃
0.5
Sin(θ=180)
Sin(θ=180)
0
0
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(℃)
Derating curv e (Io-Ta)
125
0
25
50
75
100
CASE TEMPARATURE:Tc(℃)
Derating curv e (Io-Tc)
125
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1