TSM4944D

TSM4944D
30V Dual N-Channel MOSFET
SOP-8
Pin Definition:
1. Source 1
8. Drain 1
2. Gate 1
7. Drain 1
3. Source 2
6. Drain 2
4. Gate 2
5. Drain 2
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
30
13.2 @ VGS = 10V
12.2
25 @ VGS = 4.5V
9.4
Block Diagram
Features
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
d
●
●
de
Application
●
●
ID (A)
Load Switch
Dc-DC Conversion
Part No.
Package
Packing
TSM4944DCS RLG
SOP-8
2.5Kpcs / 13” Reel
en
Ordering Information
Dual N-Channel MOSFET
mm
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Symbol
Limit
Unit
VDS
30
V
VGS
±20
V
Continuous Drain Current
ID
12.2
A
Pulsed Drain Current
IDM
30
A
IS
1.9
A
Drain-Source Voltage
tR
Gate-Source Voltage
e co
Parameter
Continuous Source Current (Diode Conduction) (Note)
Maximum Power Dissipation
o
TA = 25 C
PD
o
TA = 75 C
Operating Junction and Storage Temperature Range
W
1.2
+150
o
TJ, TSTG
-55 to +150
o
Symbol
Limit
RӨJC
1.8
o
40
o
TJ
No
Operating Junction Temperature
2.3
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
Unit
C/W
C/W
Notes 1: Maximum DC current limited by the package
Notes 2: Surface Mounted on 1” x 1” FR4 Board, t ≤ 10 sec.
1/4
Version: A13
TSM4944D
30V Dual N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
VGS = 0V, ID = 250uA
BVDSS
30
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
1.0
1.8
3.0
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 30V, VGS = 0V
IDSS
--
--
1.0
uA
On-State Drain Current
VDS ≥5V, VGS = 10V
ID(ON)
30
--
--
A
VGS = 10V, ID = 12.2A
VGS = 4.5V, ID = 9.4A
VDS = 15V, ID = 15A
Diode Forward Voltage
IS = 1.9A, VGS = 0V
b
Dynamic
Total Gate Charge
VGS = 10V
Gate-Drain Charge
Input Capacitance
VDS = 15V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
e co
Reverse Transfer Capacitance
Switching
13.2
--
19
25
gfs
--
32
--
S
VSD
--
0.85
1.3
V
Qg
--
26
--
Qgs
--
6
--
Qgd
--
5
--
Ciss
--
2134
--
Coss
--
343
--
Crss
--
134
--
td(on)
--
17
--
tr
--
3.5
--
td(off)
--
40
--
--
6
--
mm
VDS = 15V, ID = 12.2A,
Gate-Source Charge
c
11
en
Forward Transconductance
--
RDS(ON)
de
Drain-Source On-State Resistance
d
Drain-Source Breakdown Voltage
VDD = 15V, RL = 15Ω,
ID = 1A, VGEN = 10V,
nC
pF
nS
No
tR
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
mΩ
2/4
Version: A13
TSM4944D
30V Dual N-Channel MOSFET
tR
Marking Diagram
Unit: Millimeters
e co
mm
en
de
d
SOP-8 Mechanical Drawing
No
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
3/4
Version: A13
TSM4944D
No
tR
e co
mm
en
de
d
30V Dual N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: A13