TSC TSM1412CU6RF

TSM1412
Preliminary
20V N-Channel MOSFET
SOT-363
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
Pin Definition:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
20
Features
ID (A)
34 @ VGS = 4.5V
3
38 @ VGS = 2.5V
3
44 @ VGS = 2.0V
3
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Notebook PC Application
●
Portable Equipment Applications
Ordering Information
Part No.
Package
Packing
TSM1412CU6 RF
SOT-363
3Kpcs / 7” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
ID
5
A
IDM
15
A
IS
1.0
A
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
Ta = 25 C
PD
o
Ta = 75 C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
1.6
W
0.8
TJ
+150
o
C
TJ, TSTG
-55 to +150
o
C
Symbol
Limit
Thermal Performance
Parameter
Junction to Case Thermal Resistance
RӨJF
45
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
80
Unit
o
C/W
o
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
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Version: Preliminary
TSM1412
Preliminary
20V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
20
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
0.45
0.65
0.85
V
Gate Body Leakage
VGS = ±8V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 16V, VGS = 0V
IDSS
--
--
1.0
µA
On-State Drain Current
VDS ≥ 10V, VGS = 4.5V
ID(ON)
15
--
--
A
--
28
34
--
32
38
--
37
44
VGS = 4.5V, ID = 3A
Drain-Source On-State Resistance
VGS = 2.5V, ID = 3A
RDS(ON)
VGS = 2.0V, ID = 3A
mΩ
Forward Transconductance
VDS = 15V, ID = 3A
gfs
--
40
--
S
Diode Forward Voltage
IS = 1.0A, VGS = 0V
VSD
--
0.8
1.2
V
Qg
--
11
14
Qgs
--
1.5
--
Qgd
--
2.1
--
Ciss
--
900
--
Coss
--
140
--
Crss
--
100
--
td(on)
--
0.53
0.8
tr
--
1.4
2.2
td(off)
--
13.5
20
--
5.9
9
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 10V, ID = 3A,
VGS = 4.5V
VDS = 10V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 10V, RL = 10Ω,
ID = 1A, VGEN = 4.5V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/4
nS
Version: Preliminary
TSM1412
Preliminary
20V N-Channel MOSFET
SOT-363 Mechanical Drawing
DIM
A
A1
A2
b
b1
c
c1
D
E
E1
e
e1
L
θ
θ1
3/4
SOT-363 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
0.80
1.10
0.031
0.043
0
0.10
0
0.004
0.80
1.00
0.031
0.040
0.15
0.30
0.006 0.012
0.15
0.25
0.006 0.010
0.08
0.22
0.003 0.009
0.08
0.20
0.003 0.008
1.90
2.10
0.074 0.084
2.00
2.20
0.078 0.086
1.15
1.35
0.045 0.055
0.65 BSC
0.025 BSC
1.30 BSC
0.051 BSC
0.26
0.46
0.010
0.018
0º
8º
0º
8º
4º
10º
4º
10º
Version: Preliminary
Preliminary
TSM1412
20V N-Channel MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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4/4
Version: Preliminary