TSH251 Micropower CMOS Output Hall Effect Switch TO-92S Pin Definition: 1. VCC 2. GND 3. Output TSOT-23 Pin Definition: 1. VCC 2. Output 3. GND Description TSH251 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity micro-power switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. TSH251 is special made for low operation voltage at 1.65V, to active the chip which is includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, This device requires the presence of omni-polar magnetic fields for operation. Features ● ● ● ● ● ● ● ● ● ● CMOS Hall IC Technology Strong RF noise protection 1.65 to 3.5V for battery-powered applications Omni polar, output switches with absolute value of North or South pole from magnet Operation down to 1.65V, micropower consumption High Sensitivity for reed switch replacement applications Low sensitivity drift in crossing of Temp. range Ultra Low power consumption at 5µA (avg.) High ESD Protection, HBM > ±4KV( min ) Totem-pole output Ordering Information Part No. TSH251CT B0G TSH251CX RFG Package Packing TO-92S TSOT-23 1kpcs / Bulk Bag 3kpcs / 7” Reel Note: “G” denote for Halogen Free Product Application ● ● ● ● Solid state switch, Water Meter, Floating Meter Handheld Wireless Handset Awake Switch (Flip Cell/PHS Phone/Note Book/Flip Video Set) Lid close sensor for battery powered devices Magnet proximity sensor for reed switch replacement in low duty cycle applications Absolute Maximum Ratings (TA=25oC unless otherwise noted) Characteristics Limit Value Unit Supply voltage Output Voltage Reverse Voltage Magnetic flux density Output current Operating temperature range VDD VOUT VDD/OUT 4.5 4.5 -0.3 Unlimited 1 -40 to +85 V V V Gauss mA IOUT TOPR o C o -65 to +150 C o 150 C 206 TO-92S o Thermal Resistance - Junction to Ambient RθJA C/W 543 TSOT-23 148 TO-92S o Thermal Resistance - Junction to Case RθJC C/W 410 TSOT-23 606 TO-92S Package Power Dissipation PD mW 230 TSOT-23 Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximumrated conditions for extended periods may affect device reliability. Storage temperature range Maximum Junction Temp TSTG TJ 1/8 Version: B14 TSH251 Micropower CMOS Output Hall Effect Switch Block Diagram Note: Static sensitive device; please observe ESD precautions. Reverse VDD protection is not included. For reverse voltage protection, a 100Ω resistor in series with VDD is recommended. Typical Application Circuit C1：10nF C2：100pF Electrical Specifications (DC Operating Parameters: TA=+25oC, VDD=1.8V) Parameters Min Typ Max Units 1.65 -- 3.5 V Awake State -- 1.4 3 mA Sleep State -- 3.6 7 µA Average -- 5 10 µA Output Leakage Current Output off -- -- 1 µA Output High Voltage IOUT=0.5mA(Source) VDD-0.2 -- -- V Output Low Voltage IOUT=0.5mA(Sink) -- -- 0.2 V Awake mode time Operating -- 40 80 us Sleep mode time Operating -- 40 80 ms -- 0.1 -- % 4 -- -- KV Supply Voltage Supply Current Test Conditions Operating Duty Cycle Electro-Static Discharge HBM 2/8 Version: B14 TSH251 Micropower CMOS Output Hall Effect Switch Magnetic Specifications (TSH251CT) Parameter Symbol Test Conditions Min. Typ. Max. Units Operating Point BOPS S pole to branded side, B > BOP, VOUT On -- 30 55 Gauss BOPN N pole to branded side, B > BOP, VOUT On -55 -30 -- Gauss Release Point BRPS S pole to branded side, B < BRP, VOUT Off 10 20 -- Gauss BRPN N pole to branded side, B < BRP, VOUT Off -- -20 -10 Gauss Hysteresis BHYS |BOPx - BRPx| -- 10 -- Gauss Min. Typ. Max. Units Note: 1G (Gauss) = 0.1mT (millitesta) Magnetic Specifications (TSH251CX) Parameter Symbol Test Conditions Operating Point BOPS N pole to branded side, B > BOP, VOUT On -- 30 55 Gauss BOPN S pole to branded side, B > BOP, VOUT On -55 -30 -- Gauss Release Point BRPS N pole to branded side, B < BRP, VOUT Off 10 20 -- Gauss BRPN S pole to branded side, B < BRP, VOUT Off -- -20 -10 Gauss Hysteresis BHYS |BOPx - BRPx| -- 10 -- Gauss Note: 1G (Gauss) = 0.1mT (millitesta) Output Behavior versus Magnetic Pole o DC Operating Parameters: TA = -40 to 125 C, VCC = 1.8V ~ 6V Parameter Test condition OUT South pole B<Bop[(-55)~(-10)] Low Null or weak magnetic field B=0 or B < BRP High North pole B>Bop(55~10) Low TO-92S TSOT-23 3/8 Version: B14 TSH251 Micropower CMOS Output Hall Effect Switch Characteristic Performance Figure 1. Supply Voltage vs. Flux Density Figure 2. Temperature vs. Flux Density Figure 3. Supply Current vs. Temperature Figure 4. Supply Current vs. Supply Voltage Figure 5. Output Saturation Voltage vs. Supply Voltage Figure 6. Output Saturation Voltage vs. Temperature 4/8 Version: B14 TSH251 Micropower CMOS Output Hall Effect Switch Characteristic Performance Figure 7. Output Leakage Current vs. Supply Voltage Figure 8. Power Dissipation vs. Temperature 5/8 Version: B14 TSH251 Micropower CMOS Output Hall Effect Switch TO-92S Mechanical Drawing Unit: Millimeters Marking Diagram 251 Y WW = Device Code = Year Code (4=2014, 5=2015….) = Week Code (01~52) 6/8 Version: B14 TSH251 Micropower CMOS Output Hall Effect Switch TSOT-23 Mechanical Drawing Unit: Millimeters Marking Diagram 251 WW = Device Code = Week Code Table week code week code week code week code 1 QA 14 QN 27 RA 40 RN 2 QB 15 QO 28 RB 41 RO 3 QC 16 QP 29 RC 42 RR 4 QD 17 QQ 30 RD 43 RO 7/8 5 QE 18 QR 31 RE 44 RR 6 QF 19 QS 32 RF 45 RS 7 QG 20 QT 33 RG 46 RT 8 QH 21 QU 34 RH 47 RU 9 QI 22 QV 35 RI 48 RV 10 QJ 23 QW 36 RJ 49 RW 11 QK 24 QX 37 RK 50 RX 12 QL 25 QY 38 RL 51 RY 13 QM 26 QZ 39 RM 52 RZ Version: B14 TSH251 Micropower CMOS Output Hall Effect Switch Notice SRecifications of the Rroducts disRlayed herein are subject to change without notice. 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