TSC TSM4416D_11

TSM4416D
30V Dual N-Channel MOSFET
SOP-8
Pin Definition:
1. Source 1
8. Drain 1
2. Gate 1
7. Drain 1
3. Source 2
6. Drain 2
4. Gate 2
5. Drain 2
PRODUCT SUMMARY
VDS (V)
30
Features
RDS(on)(mΩ)
ID (A)
15 @ VGS = 4.5V
11
24 @ VGS = 2.5V
10
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Load Switch
●
PWM Application
Ordering Information
Part No.
Package
Packing
TSM4416DCS RL
TSM4416DCS RLG
SOP-8
SOP-8
2.5Kpcs / 13” Reel
2.5Kpcs / 13” Reel
Dual N-Channel MOSFET
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (TA=25oC, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
ID
8.5
A
IDM
40
A
IS
2.6
A
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
Ta = 25 C
PD
o
Ta = 75 C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
2.5
W
1.6
TJ
+150
o
TJ, TSTG
-55 to +150
o
Symbol
Limit
C
C
Thermal Performance
Parameter
Thermal Resistance Junction to Foot
RӨJF
Thermal Resistance Junction to Ambient
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
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RӨJA
Unit
25
o
50
o
C/W
C/W
Version: A11
TSM4416D
30V Dual N-Channel MOSFET
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
30
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1
1.8
3
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
IDSS
--
--
-1.0
uA
--
12
15
--
16
24
Drain-Source On-State Resistance
VGS = 4.5V, ID = 10A
VDS = 15V, ID = 10A
RDS(ON)
mΩ
Forward Transconductance
IS = 1A, VGS = 0V
gfs
--
17
--
S
Diode Forward Voltage
VGS = 0V, ID = 250uA
VSD
--
0.71
1.0
V
Qg
--
7.7
10.01
Qgs
--
1.6
2.08
Qgd
--
3.1
4.03
b
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 15V, ID = 10A,
VGS = 5V
VDS = 15V, VGS = 0V,
f = 1.0MHz
Ciss
--
890
--
Coss
--
159.6
--
Crss
--
83.2
--
td(on)
--
11.1
22.2
tr
--
8.4
16.8
td(off)
--
25.3
50.6
--
2.8
5.6
nC
pF
b,c
Turn-On Delay Time
Turn-On Rise Time
VDD = 15V, ID = 10A,
Turn-Off Delay Time
VGEN = 10V, RG = 0.3Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
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nS
Version: A11
TSM4416D
30V Dual N-Channel MOSFET
Electrical Characteristics Curve (TA=25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A11
TSM4416D
30V Dual N-Channel MOSFET
Electrical Characteristics Curve (TA=25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Safety Operation Area
4/6
Version: A11
TSM4416D
30V Dual N-Channel MOSFET
SOP-8 Mechanical Drawing
DIM
A
B
C
D
F
G
K
M
P
R
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
4.80
5.00
0.189
0.196
3.80
4.00
0.150
0.157
1.35
1.75
0.054
0.068
0.35
0.49
0.014
0.019
0.40
1.25
0.016
0.049
1.27BSC
0.05BSC
0.10
0.25
0.004
0.009
0º
7º
0º
7º
5.80
6.20
0.229
0.244
0.25
0.50
0.010
0.019
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6
Version: A11
TSM4416D
30V Dual N-Channel MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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Version: A11