TSF30H120C Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB - Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 5 in-lbs. max. Weight: 1.7 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (Rated VR) Isolation voltage from terminal to heatsink t = 1 min SYMBOL TSF30H120C UNIT VRRM 120 V A 15 IFSM 150 A dV/dt 10000 V/μs VAC 1500 V Min. TYP. MAX. - 0.65 - - 0.70 - IF = 15A - 0.81 0.93 IF = 5A - 0.53 - - 0.58 - - 0.67 0.75 - - 500 - 20 IF = 5A IF = 7.5A Instantaneous forward voltage per diode ( Note1 ) 30 IF(AV) IF = 7.5A TJ = 25°C TJ = 125°C VF VF IF = 15A Instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C IR - V μA mA O Typical thermal resistance per diode RθjC 4.5 Operating junction temperature range TJ - 55 to + 150 O - 55 to + 150 O Storage temperature range TSTG C/W C C Note 1: Pulse Test with Pulse Width=300us, 1% Duty Cycle Document Number：DS_D1311020 Version:A13 TSF30H120C Taiwan Semiconductor ORDERING INFORMATION GREEN COMPOUND PART NO. PACKING CODE TSF30H120C C0 CODE Suffix "G" PREFERRED P/N PART NO. PACKING CODE TSF30H120C C0 TSF30H120C C0 TSF30H120C C0G TSF30H120C C0 PACKAGE PACKING ITO-220AB 50 / Tube EXAMPLE GREEN DESCRIPTION COMPOUND G Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG. 2 TYPICAL FORWARD CHARACTERISTICS FIG.1 FORWARD CURRENT DERATING CURVE 100 INSTANTANEOUS FORWARD CURRENT (A) 40 AVERAGE FORWARD CURRENT (A) 35 30 25 20 15 10 WITH HEATSINK 4in x 6in x 0.25in Al-Plate 5 0 0 25 50 75 100 125 10 Tj=150oC Tj=125oC 1 Tj=100oC 0.1 Tj=25oC 0.01 150 0 0.2 CASE TEMPERATURE (oC) 0.6 0.8 1 1.2 FIG. 4 TYPICAL JUNCTION CAPACITANCE FIG. 3 TYPICAL REVERSE CHARACTERISTICS 10000 10 Tj=150oC 1 Tj=125oC 0.1 Tj=100oC CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (mA) 0.4 FORWARD VOLTAGE (V) 0.01 0.001 Tj=25oC 1000 100 0.0001 f=1.0MHz Vslg=50mVp-p 0.00001 10 20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) Document Number：DS_D1311020 100 10 0.1 1 10 100 REVERSE VOLTAGE (V) Version:A13 TSF30H120C Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit(mm) Unit(inch) Min Max Min Max A 4.30 4.70 0.169 0.185 B 2.50 3.16 0.098 0.124 C 2.30 2.96 0.091 0.117 D 0.46 0.76 0.018 0.030 E 6.30 6.90 0.248 0.272 F 9.60 10.30 0.378 0.406 G 3.00 3.40 0.118 0.134 H I 0.95 0.50 1.45 0.90 0.037 0.020 0.057 0.035 J 2.40 3.20 0.094 0.126 K 14.80 15.50 0.583 0.610 L - 4.10 - 0.161 M 12.60 13.80 0.496 0.543 N - 1.80 - 0.071 O 2.41 2.67 0.095 0.105 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number：DS_D1311020 Version:A13