Datasheet (TSM055N03EPQ56)

TSM055N03EPQ56
30V N-Channel MOSFET
PDFN56
Key Parameter Performance
Pin Definition:
1. Source
8. Drain
2. Source
7. Drain
3. Source
6. Drain
4. Gate
5. Drain
Parameter
Value
Unit
VDS
30
V
RDS(on) (max)
VGS = 10V
5.5
VGS = 4.5V
8.5
Qg
Ordering Information
●
11.1
mΩ
nC
Block Diagram
Part No.
Package
Packing
TSM055N03EPQ56 RLG
PDFN56
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
N-Channel MOSFET with ESD protection
Absolute Maximum Ratings (Tc = 25℃ unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
TC = 25℃
Continuous Drain Current
TC = 100℃
Drain Current-Pulsed (Note 1)
ID
80
51
A
IDM
320
A
EAS
45
mJ
PD
74
W
TSTG
-55 to +150
℃
TJ
-55 to +150
℃
Symbol
Limit
Unit
Thermal Resistance - Junction to Case
RӨJC
1.7
℃/W
Thermal Resistance - Junction to Ambient
RӨJA
62
℃/W
Single Pulse Avalanche Energy
(Note 2)
Maximum Power Dissipation @ TC = 25℃
Storage Temperature Range
Operating Junction Temperature Range
Thermal Performance
Parameter
1/5
Version: A14
TSM055N03EPQ56
30V N-Channel MOSFET
Electrical Specifications (TC = 25℃ unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
30
--
--
V
--
4.5
5.5
6.3
8.5
1.2
1.6
2.5
V
--
--
1
µA
--
--
10
µA
µA
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
VGS = 0V, ID = 250µA
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 10A
VDS = VGS, ID = 250µA
RDS(ON)
VGS(TH)
VDS = 30V, VGS = 0V
mΩ
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V,
TJ = 125℃
IDSS
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±10
Qg
--
11.1
--
Qgs
--
1.85
--
Qgd
--
6.8
--
Ciss
--
1210
--
Coss
--
190
--
Crss
--
100
--
td(on)
--
7.5
--
tr
--
14.5
--
td(off)
--
35.2
--
tf
--
9.6
--
IS
--
--
80
A
ISM
--
--
320
A
VSD
--
--
1
V
Dynamic
Total Gate Charge (Note 3,4)
Gate-Source Charge
Gate-Drain Charge
(Note 3,4)
(Note 3,4)
VDS = 15V, ID = 20A,
VGS = 4.5V
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
nC
pF
Switching
Turn-On Delay Time (Note 3,4)
Turn-On Rise Time
(Note 3,4)
Turn-Off Delay Time
(Note 3,4)
VGS = 10V, VDS = 15V,
RG = 3.3Ω, ID = 15A
Turn-Off Fall Time (Note 3,4)
ns
Drain-Source Diode Characteristics and Maximum Rating
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulse Drain-Source
Diode Forward Current
Drain-Source Diode Forward
Voltage
Integral reverse diode in
the MOSFET
VGS = 0V, IS = 1A
Notes:
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD = 25V, VGS = 10V, L = 0.1mH,IAS = 42A, RG = 25W, Starting TJ = 25℃.
3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
4. Essentially independent of operating temperature.
2/5
Version: A14
TSM055N03EPQ56
30V N-Channel MOSFET
Electrical Characteristics Curves
Normalized RDS(on) vs. T J
Normalized On Resistance
ID, Continuous Drain Current (A)
Continuous Drain Current vs. Tc
TC, Case Temperature (℃)
TJ, Junction Temperature (℃)
Gate Charge Waveform
VGS, Gate to Source Voltage (V)
Normalized Gate Threshold Voltage
Normalized Vth vs. TJ
Qg, Gate Charge (nC)
Normalized Transient Impedance
Maximum Safe Operation Area
Normalized Thermal Response
ID, Continuous Drain Current (A)
TJ , Junction Temperature (℃)
VDS, Drain to Source Voltage (V)
Square Wave Pulse Duration (s)
3/5
Version: A14
TSM055N03EPQ56
30V N-Channel MOSFET
PDFN56 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
4/5
Version: A14
TSM055N03EPQ56
30V N-Channel MOSFET
Notice
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5/5
Version: A14